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DDTA144WCA-7-F

Bipolar Transistors - Pre-Biased 200MW 47K 22K

器件类别:分立半导体    晶体管   

厂商名称:Diodes Incorporated

器件标准:

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器件:DDTA144WCA-7-F

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Diodes Incorporated
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
19 weeks
其他特性
BUILT-IN BIAS RESISTOR RATIO 0.47
最大集电极电流 (IC)
0.03 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
56
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.2 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
参数对比
与DDTA144WCA-7-F相近的元器件有:DDTA123JCA-7-F、DDTA143XCA-7-F、DDTA144VCA-7-F、DDTA124XCA-7-F、DDTA114YCA-7-F、DDTA143ZCA-7-F。描述及对比如下:
型号 DDTA144WCA-7-F DDTA123JCA-7-F DDTA143XCA-7-F DDTA144VCA-7-F DDTA124XCA-7-F DDTA114YCA-7-F DDTA143ZCA-7-F
描述 Bipolar Transistors - Pre-Biased 200MW 47K 22K Bipolar Transistors - Pre-Biased 200MW 2.2K 47K Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW Bipolar Transistors - Pre-Biased 200MW 47K Bipolar Transistors - Pre-Biased 200MW 22K 47K Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 19 weeks 19 weeks 19 weeks 19 weeks 19 weeks 19 weeks 19 weeks
其他特性 BUILT-IN BIAS RESISTOR RATIO 0.47 BUILT-IN BIAS RESISTOR RATIO 21.36 BUILT-IN BIAS RESISTOR RATIO 2.13 BUILT-IN BIAS RESISTOR RATIO 0.21 BUILT-IN BIAS RESISTOR RATIO 2.14 BUILT-IN BIAS RESISTOR RATIO 4.7 BUILT-IN BIAS RESISTOR RATIO 10
最大集电极电流 (IC) 0.03 A 0.1 A 0.1 A 0.03 A 0.05 A 0.07 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 56 80 30 33 68 68 80
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1 1
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260 260 260 260
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40 40 40
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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