DF2S30FS,L3M,DF2S30FS,L3M pdf中文资料,DF2S30FS,L3M引脚图,DF2S30FS,L3M电路-Datasheet-电子工程世界

文档预览

DF2S30FS

ESD Protection Diodes

Silicon Epitaxial Planar

DF2S30FS

1. Applications

•

ESD Protection

This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

Note:

2. Packaging and Internal Circuit

1: Cathode

2: Anode

SOD-923

1: Cathode

2: Anode

fSC

The SOD-923 package is recommended.

Package

SOD-923

fSC

Product name

DF2S30FS,L3M (Note 1)

DF2S30FS,L3J , DF2S30FS,L3F

Note 1: The product name of the devices housed in the SOD-923 package are suffixed with

the "M".

Start of commercial production

2006-05

2014-07-18

Rev.3.0

DF2S30FS

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25



)

25

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

Storage temperature

Symbol

ESD

stg

Rating

±8

150

-55 to 150

Unit



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

4. Electrical Characteristics (Unless otherwise specified, T

= 25



)

25

RWM

: Working peak reverse

voltage

: Zener voltage

: Reverse breakdown voltage

: Dynamic impedance

: Zener current

: Reverse breakdown current

: Reverse current

: Clamp voltage

: Peak pulse current

DYN

: Dynamic resistance

: Forward current

: Forward voltage

Fig. 4.1 Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Zener voltage

(Reverse breakdown voltage)

Dynamic impedance

Reverse current

Total capacitance

Symbol

RWM

)

Note



= 2 mA

)

= 2 mA

)

Test Condition

Min



28.0



Typ.



30.0



Max

32.0

150

0.5



Unit

Ω

µA

RWM

= 23 V

= 0 V, f = 1 MHz

2014-07-18

Rev.3.0

DF2S30FS

5. Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±8

Note:

Criterion: No damage to devices.

6. Marking

Fig. 6.1 Marking

7. Land Pattern Dimensions (for reference only)

Fig. 7.1 SOD-923 (unit: mm)

Fig. 7.2 fSC (unit: mm)

2014-07-18

Rev.3.0

DF2S30FS

8. Characteristics Curves (Note)

Fig. 8.1 I

- V

)

Fig. 8.2 I

- V

Fig. 8.3 C

- V

Note:

The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2014-07-18

Rev.3.0

DF2S30FS

Package Dimensions

Unit: mm

The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the

Toshiba sales representative.

Weight: 0.55 mg (typ.)

Package Name(s)

TOSHIBA: 1-1AH1A

Nickname: SOD-923

2014-07-18

Rev.3.0

参数对比

与DF2S30FS,L3M相近的元器件有：DF2S30FS,L3F、DF2S30FS,L3F(T、DF2S30FS(TL3PSE,E)、DF2S30FS(TL3,T)、DF2S30FS(TL3NMB)、DF2S30FS(TL3NMB,E)、DF2S30FS(TL3CNOI,E。描述及对比如下：

型号	DF2S30FS,L3M	DF2S30FS,L3F	DF2S30FS,L3F(T	DF2S30FS(TL3PSE,E)	DF2S30FS(TL3,T)	DF2S30FS(TL3NMB)	DF2S30FS(TL3NMB,E)	DF2S30FS(TL3CNOI,E
描述	TVS DIODE 23V SOD923	VOLTAGE REGULATOR DIODE	Zener Diode	Zener Diode, 30V V(Z), 6.67%, Silicon, Unidirectional	Zener Diode, 30V V(Z), 6.67%, Silicon, Unidirectional	Zener Diode, 30V V(Z), 6.67%, Silicon, Unidirectional	Zener Diode, 30V V(Z), 6.67%, Silicon, Unidirectional	Zener Diode, 30V V(Z), 6.67%, Silicon, Unidirectional
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
二极管类型	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE	ZENER DIODE
Base Number Matches	1	1	1	1	1	1	1	1
包装说明	-	-	-	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2
配置	-	-	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	-	-	-	SILICON	SILICON	SILICON	SILICON	SILICON
JESD-30 代码	-	-	-	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2	R-PDSO-F2
元件数量	-	-	-	1	1	1	1	1
端子数量	-	-	-	2	2	2	2	2
最高工作温度	-	-	-	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	-	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性	-	-	-	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
标称参考电压	-	-	-	30 V	30 V	30 V	30 V	30 V
表面贴装	-	-	-	YES	YES	YES	YES	YES
技术	-	-	-	ZENER	ZENER	ZENER	ZENER	ZENER
端子形式	-	-	-	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	-	-	-	DUAL	DUAL	DUAL	DUAL	DUAL
最大电压容差	-	-	-	6.67%	6.67%	6.67%	6.67%	6.67%
工作测试电流	-	-	-	2 mA	2 mA	2 mA	2 mA	2 mA