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DRD8880H20

Rectifier Diode

厂商名称:Dynex

厂商官网:http://www.dynexsemi.com/

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DRD8880H22
Rectifier Diode
DS6006 – 1 March 2011 (LN28193)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
2200V
8880A
125000A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
2200
2000
1800
1600
Conditions
DRD8880H22
DRD8880H20
DRD8880H18
DRD8880H16
V
RSM
= V
RRM
+100V
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD8880H22
for a 2200V device
(See Package Details for further information)
Fig. 1 Package outline
1/6
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DRD8880H22
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
11150
17510
15770
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
8880
13940
12560
A
A
A
SURGE RATINGS
Symbol
I
FSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 160°C
V
R
= 0
Max.
125.0
78.13
Units
kA
MA s
2
2/6
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DRD8880H22
-3-
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
Double side cooled
Blocking V
DRM
/
VRRM
DC
DC
Min.
-
-
-40
-40
110
Max.
0.004
0.0008
160
160
130
Units
°C/W
°C/W
°C
°C
kN
CHARACTERISTICS
Symbol
V
FM
I
RM
Parameter
Forward voltage
Peak reverse current
Test Conditions
At 6000A peak, T
case
= 160°C
At V
DRM,
T
case
= 160°C
I
F
= 4000A, dI
RR
/dt =10A/µs
Min.
-
-
Max.
0.98
600
Units
V
mA
Q
S
Total stored charge
T
case
= 160°C, V
R
=100V
-
8000
µC
V
TO
r
T
Threshold voltage
Slope resistance
At T
vj
= 160°C
At T
vj
= 160°C
-
-
0.77
0.035
V
m
3/6
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DRD8880H22
CURVES
10000
20000
1/2 wave
3 phase
9000
Instantaneous forward current, I
F
- (A)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
16000
6 phase
T
j
=160°C
Mean power dissipation - (W)
12000
8000
4000
0.6 0.7 0.8 0.9
1
1.1
Instantaneous forward voltage,V
F
- (V)
Fig.2 Maximum forward characteristics
1.2
0
2000
4000
6000
8000
Mean on-state current, I
T(AV)
- (A)
Fig.3 Dissipation curves
10000
144.0
124.0
Surge current, ITSM - (KA)
104.0
84.0
64.0
44.0
Conditons:
T
case
=160°C
V
R
=0
Pulse width = 10ms
0.005
Double side cooled
0.004
Thermal Impedance Zth(j-c) (°C/W)
0.003
0.002
0.001
24.0
4.0
1
10
Number of cycles
100
0
0.001
0.01
0.1
Time ( s )
1
10
100
Fig.4 Surge (Non-Repetitive) Forward current vs time
Fig.5 Maximum (limit) transient thermal impedance-
junction to case
4/6
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DRD8880H22
-5-
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Package outline type code: H
Note:
Some packages may be supplied with gate and or tags.
5/6
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参数对比
与DRD8880H20相近的元器件有:DRD8880H16、DRD8880H18、DRD8880H22。描述及对比如下:
型号 DRD8880H20 DRD8880H16 DRD8880H18 DRD8880H22
描述 Rectifier Diode Rectifier Diode Rectifier Diode Rectifier Diode
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