DS2010D-80,DS2010D-80 pdf中文资料,DS2010D-80引脚图,DS2010D-80电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

不符合

厂商名称

DALLAS

Reach Compliance Code

unknown

最长访问时间

80 ns

其他特性

RETRANSMIT

最大时钟频率 (fCLK)

10 MHz

周期时间

100 ns

JESD-30 代码

R-PDIP-T28

JESD-609代码

内存密度

9216 bit

内存集成电路类型

OTHER FIFO

内存宽度

功能数量

端子数量

字数

1024 words

字数代码

1000

工作模式

ASYNCHRONOUS

最高工作温度

70 °C

最低工作温度

组织

1KX9

输出特性

3-STATE

可输出

封装主体材料

PLASTIC/EPOXY

封装代码

DIP

封装等效代码

DIP28,.3

封装形状

RECTANGULAR

封装形式

IN-LINE

并行/串行

PARALLEL

电源

5 V

认证状态

Not Qualified

最大待机电流

0.008 A

最大压摆率

0.12 mA

最大供电电压 (Vsup)

5.5 V

最小供电电压 (Vsup)

4.5 V

标称供电电压 (Vsup)

5 V

表面贴装

技术

CMOS

温度等级

COMMERCIAL

端子面层

Tin/Lead (Sn/Pb)

端子形式

THROUGH-HOLE

端子节距

2.54 mm

端子位置

DUAL

文档预览

DS2010

1024 x 9 FIFO Chip

FEATURES

PIN ASSIGNMENT

GND

VCC

4 3 2 1 32 31 30

13 15

17 19 21

14 16

GND

32-Pin PLCC

051994 1/1

FL/RT

X0/HF

•

First-in, first-out memory-based architecture

•

Flexible 1024 x 9 organization

•

Low-power HCMOS technology

•

Asychronous and simultaneous read/write

•

Bidirectional applications

•

Fully expandable by word width or depth

•

Empty and full warning flags

•

Half-full flag capability in single-device mode

•

Retransmit capability

•

Available

times

in 50ns, 65ns, 80ns, and 120ns access

FL/RT

X0/HF

28-Pin DIP

(300 and 600 Mil)

•

Optional industrial temperature range -40°C to +85°C

available, designated N

PIN DESCRIPTION

FL/RT

0-8

XO/HF

GND

–

WRITE

READ

RESET

First Load/Retransmit

Data In

Data Out

Expansion In

Expansion Out/Half Full

Full Flag

Empty Flag

5 Volts

Ground

No Connect

DESCRIPTION

The DS2010 FIFO Chip implements a first-in, first-out

algorithm featuring asynchronous read/write opera-

tions, full, empty, and half-full flags, and unlimited ex-

pansion capability in both word size and depth. The

DS2010 is functionally and electrically equivalent to the

DS2009 512 x 9 FIFO, with the exceptions listed in the

notes for DC Electrical Characteristics of the DS2009

data sheet. Refer to the DS2009 data sheet for detailed

device description.

ECopyright

1995 by Dallas Semiconductor Corporation.

patents and other intellectual property rights, please refer to

Dallas Semiconductor databooks.

参数对比

与DS2010D-80相近的元器件有：DS2010D-50、DS2010R-120、DS2010R-65、DS2010R-80、DS2010R-50、DS2010RN-50、DS2010DN-50、DS2010D-120、DS2010D-65。描述及对比如下：

型号	DS2010D-80	DS2010D-50	DS2010R-120	DS2010R-65	DS2010R-80	DS2010R-50	DS2010RN-50	DS2010DN-50	DS2010D-120	DS2010D-65
描述	FIFO, 1KX9, 80ns, Asynchronous, CMOS, PDIP28,	FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP28,	FIFO, 1KX9, 120ns, Asynchronous, CMOS, PQCC32,	FIFO, 1KX9, 65ns, Asynchronous, CMOS, PQCC32,	FIFO, 1KX9, 80ns, Asynchronous, CMOS, PQCC32,	FIFO, 1KX9, 50ns, Asynchronous, CMOS, PQCC32,	FIFO, 1KX9, 50ns, Asynchronous, CMOS, PQCC32,	FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP28,	FIFO, 1KX9, 120ns, Asynchronous, CMOS, PDIP28,	FIFO, 1KX9, 65ns, Asynchronous, CMOS, PDIP28,
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最长访问时间	80 ns	50 ns	120 ns	65 ns	80 ns	50 ns	50 ns	50 ns	120 ns	65 ns
其他特性	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT
最大时钟频率 (fCLK)	10 MHz	15.38 MHz	7.14 MHz	12.5 MHz	10 MHz	15.38 MHz	15.38 MHz	15.38 MHz	7.14 MHz	12.5 MHz
JESD-30 代码	R-PDIP-T28	R-PDIP-T28	S-PQCC-J32	S-PQCC-J32	S-PQCC-J32	S-PQCC-J32	S-PQCC-J32	R-PDIP-T28	R-PDIP-T28	R-PDIP-T28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
内存密度	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit	9216 bit
内存集成电路类型	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO
内存宽度	9	9	9	9	9	9	9	9	9	9
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	28	28	32	32	32	32	32	28	28	28
字数	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words
字数代码	1000	1000	1000	1000	1000	1000	1000	1000	1000	1000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	85 °C	85 °C	70 °C	70 °C
组织	1KX9	1KX9	1KX9	1KX9	1KX9	1KX9	1KX9	1KX9	1KX9	1KX9
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	DIP	DIP	DIP
封装等效代码	DIP28,.3	DIP28,.3	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	DIP28,.3	DIP28,.3	DIP28,.3
封装形状	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
最大压摆率	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	YES	YES	YES	YES	YES	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	J BEND	J BEND	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	QUAD	QUAD	QUAD	QUAD	QUAD	DUAL	DUAL	DUAL
厂商名称	DALLAS	DALLAS	-	-	-	DALLAS	DALLAS	DALLAS	DALLAS	DALLAS
周期时间	100 ns	65 ns	140 ns	80 ns	100 ns	65 ns	-	-	140 ns	80 ns
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	-	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	-	4.5 V	4.5 V