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DS2010R-120

FIFO, 1KX9, 120ns, Asynchronous, CMOS, PQCC32,

器件类别:存储    存储   

厂商名称:DALLAS

厂商官网:http://www.dalsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknown
Is Samacsys
N
最长访问时间
120 ns
其他特性
RETRANSMIT
最大时钟频率 (fCLK)
7.14 MHz
周期时间
140 ns
JESD-30 代码
S-PQCC-J32
JESD-609代码
e0
内存密度
9216 bit
内存集成电路类型
OTHER FIFO
内存宽度
9
功能数量
1
端子数量
32
字数
1024 words
字数代码
1000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1KX9
输出特性
3-STATE
可输出
NO
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装等效代码
LDCC32,.5X.6
封装形状
SQUARE
封装形式
CHIP CARRIER
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
最大待机电流
0.008 A
最大压摆率
0.12 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
DS2010
DS2010
1024 x 9 FIFO Chip
FEATURES
PIN ASSIGNMENT
W
D8
D3
D2
D1
D0
XI
FF
Q0
Q1
Q2
Q3
Q8
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
D4
D5
D6
D7
D2
D1
D0
D3
D8
W
NC
VCC
D4
D5
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13 15
17 19 21
14 16
18
20
Q3
Q8
GND
NC
R
Q4
Q5
32-Pin PLCC
051994 1/1
D6
D7
NC
FL/RT
RS
EF
X0/HF
Q7
Q6
First-in, first-out memory-based architecture
Flexible 1024 x 9 organization
Low-power HCMOS technology
Asychronous and simultaneous read/write
Bidirectional applications
Fully expandable by word width or depth
Empty and full warning flags
Half-full flag capability in single-device mode
Retransmit capability
Available
times
in 50ns, 65ns, 80ns, and 120ns access
FL/RT
XI
RS
FF
EF
Q0
X0/HF
Q1
Q7
NC
Q6
Q2
Q5
Q4
R
28-Pin DIP
(300 and 600 Mil)
Optional industrial temperature range -40°C to +85°C
available, designated N
PIN DESCRIPTION
W
R
RS
FL/RT
D
0-8
Q
0-8
XI
XO/HF
FF
EF
V
CC
GND
NC
WRITE
READ
RESET
First Load/Retransmit
Data In
Data Out
Expansion In
Expansion Out/Half Full
Full Flag
Empty Flag
5 Volts
Ground
No Connect
DESCRIPTION
The DS2010 FIFO Chip implements a first-in, first-out
algorithm featuring asynchronous read/write opera-
tions, full, empty, and half-full flags, and unlimited ex-
pansion capability in both word size and depth. The
DS2010 is functionally and electrically equivalent to the
DS2009 512 x 9 FIFO, with the exceptions listed in the
notes for DC Electrical Characteristics of the DS2009
data sheet. Refer to the DS2009 data sheet for detailed
device description.
ECopyright
1995 by Dallas Semiconductor Corporation.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor databooks.
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参数对比
与DS2010R-120相近的元器件有:DS2010D-50、DS2010R-65、DS2010R-80、DS2010R-50、DS2010RN-50、DS2010DN-50、DS2010D-80、DS2010D-120、DS2010D-65。描述及对比如下:
型号 DS2010R-120 DS2010D-50 DS2010R-65 DS2010R-80 DS2010R-50 DS2010RN-50 DS2010DN-50 DS2010D-80 DS2010D-120 DS2010D-65
描述 FIFO, 1KX9, 120ns, Asynchronous, CMOS, PQCC32, FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP28, FIFO, 1KX9, 65ns, Asynchronous, CMOS, PQCC32, FIFO, 1KX9, 80ns, Asynchronous, CMOS, PQCC32, FIFO, 1KX9, 50ns, Asynchronous, CMOS, PQCC32, FIFO, 1KX9, 50ns, Asynchronous, CMOS, PQCC32, FIFO, 1KX9, 50ns, Asynchronous, CMOS, PDIP28, FIFO, 1KX9, 80ns, Asynchronous, CMOS, PDIP28, FIFO, 1KX9, 120ns, Asynchronous, CMOS, PDIP28, FIFO, 1KX9, 65ns, Asynchronous, CMOS, PDIP28,
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
最长访问时间 120 ns 50 ns 65 ns 80 ns 50 ns 50 ns 50 ns 80 ns 120 ns 65 ns
其他特性 RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT
最大时钟频率 (fCLK) 7.14 MHz 15.38 MHz 12.5 MHz 10 MHz 15.38 MHz 15.38 MHz 15.38 MHz 10 MHz 7.14 MHz 12.5 MHz
JESD-30 代码 S-PQCC-J32 R-PDIP-T28 S-PQCC-J32 S-PQCC-J32 S-PQCC-J32 S-PQCC-J32 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
内存密度 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit 9216 bit
内存集成电路类型 OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
内存宽度 9 9 9 9 9 9 9 9 9 9
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 32 28 32 32 32 32 28 28 28 28
字数 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words
字数代码 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C
组织 1KX9 1KX9 1KX9 1KX9 1KX9 1KX9 1KX9 1KX9 1KX9 1KX9
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
可输出 NO NO NO NO NO NO NO NO NO NO
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ DIP QCCJ QCCJ QCCJ QCCJ DIP DIP DIP DIP
封装等效代码 LDCC32,.5X.6 DIP28,.3 LDCC32,.5X.6 LDCC32,.5X.6 LDCC32,.5X.6 LDCC32,.5X.6 DIP28,.3 DIP28,.3 DIP28,.3 DIP28,.3
封装形状 SQUARE RECTANGULAR SQUARE SQUARE SQUARE SQUARE RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER IN-LINE CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A
最大压摆率 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES NO YES YES YES YES NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 J BEND THROUGH-HOLE J BEND J BEND J BEND J BEND THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 QUAD DUAL QUAD QUAD QUAD QUAD DUAL DUAL DUAL DUAL
周期时间 140 ns 65 ns 80 ns 100 ns 65 ns - - 100 ns 140 ns 80 ns
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - - 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - - 4.5 V 4.5 V 4.5 V
厂商名称 - DALLAS - - DALLAS DALLAS DALLAS DALLAS DALLAS DALLAS
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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