100mA / 50V Digital transistors
(with built-in resistor)
DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Dimensions
(Unit : mm)
DTC144TM
0.2
1.2
0.32
(3)
DTC144TE
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
0.2
0.22
0.4 0.4
0.8
0.13
0.5
0.2
0.2
0.5 0.5
ROHM : VMT3
Abbreviated symbol : 06
(1) Base
(2) Emitter
(3) Collector
0.15
0.1Min.
(1)(2)
0.8
1.2
1.6
ROHM : EMT3
1.0
(1) Emitter
(2) Base
(3) Colector
Abbreviated symbol : 06
DTC144TUA
2.0
0.3
(3)
0.9
0.2
0.7
DTC144TKA
2.9
0.4
(3)
1.1
0.8
1.25
2.1
(2)
(1)
0.65 0.65
1.3
0.15
0.1Min.
0.95 0.95
0.15
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
Abbreviated symbol : 06
ROHM : SMT3
EIAJ : SC-59
1.9
Each lead has same dimensions
Abbreviated symbol : 06
Inner circuit
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=47kΩ
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2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
(1) Emitter
(2) Base
(3) Colector
(2)
(1)
1.6
2.8
(1) Emitter
(2) Base
(3) Colector
1/2
2009.06 - Rev.B
DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
Packaging specifications
Package
Packaging type
Part No.
Code
Basic ordering
unit (pieces)
DTC144TM
DTC144TE
DTC144TUA
DTC144TKA
−
−
−
−
−
−
VMT3
Taping
T2L
8000
EMT3
Taping
TL
3000
−
UMT3
Taping
T106
3000
−
−
SMT3
Taping
T146
3000
−
−
−
Data Sheet
Absolute maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
150
150
−55
to
+150
Limits
DTC144TM DTC144TE DTC144TUA DTC144TKA
50
50
5
100
200
Unit
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol Min.
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
50
50
5
−
−
−
100
32.9
−
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
0.5
0.5
0.3
600
61.1
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=5mA/0.5mA
V
CE
=5V,
I
C
=1mA
−
V
CE
=10V,
I
E
= −5mA,
f=100MHz
Conditions
Collector-emitter breakdown voltage BV
CEO
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=
5V
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
Ta=100°C
25°C
−40°C
l
C
/l
B
=10
200
100
50
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
Ta=100°C
25°C
−40°C
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.B
Notice
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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