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EDI8G32512V15MMC

SRAM Module, 512KX32, 15ns, CMOS, SIMM-72

器件类别:存储    存储   

厂商名称:White Electronic Designs Corporation

厂商官网:http://www.wedc.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
SIMM-72
Reach Compliance Code
unknown
Base Number Matches
1
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White Electronic Designs
512Kx32 Static RAM CMOS, High Speed Module
FEATURES
n
n
EDI8F32512V
DESCRIPTION
512Kx32 bit CMOS Static RAM
Random Access Memory
n
n
n
n
Access Times: 15, 20, and 25ns
Individual Byte Selects
Fully Static, No Clocks
TTL Compatible I/O
72 Pin ZIP, No. 173
72 lead SIMM, No. 174 (Gold Option)
Common Data Inputs and Outputs
The EDI8F32512V is a high speed 16 Mb Static RAM
module organized as 512K words by 32 bits. This module is
constructed from four 512Kx8 Static RAMs in SOJ packages
on an epoxy laminate (FR4) board.
Four chip enables (E0#-E3#) are used to independently
enable the four bytes. Reading or writing can be executed on
individual bytes or any combination of multiple bytes through
proper use of selects.
The EDI8F32512V is offered in 72 pin ZIP and 72 lead SIMM
packages, which enable 16 Mb of memory to be placed in
less than 1.3 square inches of board space.
All inputs and outputs are TTL compatible and operate from a
single 3.3V supply. Fully asynchronous circuitry requires no
clocks or refreshing for operation and provides equal access
and cycle times for ease of use.
Pins PD0- PD3, are used to identify module memory density in
applications where alternate modules can be interchanged.
n
High Density Package
n
n
n
n
Single +3.3V (±10%) Supply Operation
* This product is subject to change without notice.
FIG. 1
Pin Configurations and Block Diagram
½½
½½½
½½½
½½½
½½½
½½½
½½½
½
½½
½½
½½
½½
½½½
½½½
½½½
½½½
½½
½½½
½½½
½½½
½½½½
½
½½
½
½½½½½
½½½½½
½½½½½
½½½½½
½½½½
½½½½
½½½½
½½½½
½½½½½
½½½½½
½½½½½
½½½½½
½
½½½
½½
½½½
½½
½½
½½
½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½
½½
½½
½½
½½
½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½½
½½
½½
½½½½
½
½½½
½½½½
½½½½
½½½½
½½½½½
½½½½½
½½½
½½½
½½½
½½½½½
½½½½½
½½½½½
½½½½½
½
½½
½
½½½½
½½½½
½½½½
½½½½
½½½
½½½½½
½½½½½
½½½½½
½½½½½
½½½
½½½
½½½
½
½½
½
½½½
½½½½½
½½½½½
½½½½½
½½½½½
½½½½
½½
Pin Names
A0-A18
E0#-E3#
W#
G#
DQ0-DQ31
V
CC
V
SS
NC
½½½½½½
½½
½½
½½½½½
½½½½½
½½½
½½½½½
½½½½½
½½½
½½½½½
½½½½½
½½½
½½½½½
½½½½½
½½½
½½½½½½½½½½½½½½½½½
½½½½½½½½½½½½½½½½½½½½
Address Inputs
Chip Enables
Write Enable
Output Enable
Common Data
Input/Output
Power (+3.3V±10%)
Ground
No Connectiona
½½½½½½½½
½½½½½½½½½
½½½½½½½½½½
½½½½½½½½½
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Aug, 2002
Rev. 8A
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to V
SS
Operating Temperature TA (Ambient)
Commercial
Storage Temperature, Plastic
Power Dissipation
Output Current
-0.5V to 4.6V
0°C to +70°C
-55°C to +125°C
2.5 Watts
20 mA
EDI8F32512V
RECOMMENDED DC OPERATING
CONDITIONS
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Sym
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.2
-0.3
Typ
3.3
0
--
--
Max
3.6
0
V
CC
+0.3
0.8
Units
V
V
V
V
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
(Note: For t
EHQZ
,t
GHQZ
and t
WLQZ
, CL = 5pF)
V
SS
to 3.0V
5ns
1.5V
1TTL, CL = 30pF
DC ELECTRICAL CHARACTERISTICS
Parameter
Operating Power Supply Current
Standby (TTL) Power Supply Current
Full Standby Power Supply Current
CMOS
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
*Typical: TA = 25°C, V
CC
= 5.0V
Sym
I
CC
1
I
CC
2
I
CC
3
I
LI
I
LO
V
OH
V
OL
Conditions
W#, E# = V
IL
, II/O = 0mA, Min Cycle
E# > V
IH
, V
IN
> V
IL
or V
IN
> V
IH
E# > V
CC
-0.2V
V
IN
> V
CC
=0.2V or V
IN
> 0.2V
V
IN
= 0V to V
CC
V I/O = 0V TO V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
Min
Typ*
Max
800
240
40
±20
±20
--
0.4
Units
mA
mA
mA
µA
µA
V
V
--
--
2.4
--
--
--
--
--
TRUTH TABLE
E#
H
L
L
L
W#
X
H
L
H
G#
X
L
X
H
Mode
Standby
Read
Write
Output
Deselect
Output
HIGH Z
D
OUT
D
IN
HIGH Z
Power
I
CC
2/I
CC
3
I
CC
1
I
CC
1
I
CC
1
Parameter
Address Lines
Data Lines
Chip Enable Line
Write Line
CAPACITANCE
(f=1.0MHz, V
IN
=V
CC
or V
SS
)
Sym
CI
CD/Q
CC
CN
Max
45
20
20
45
Unit
pF
pF
pF
pF
These parameters are sampled, not 100% tested.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Aug, 2002
Rev. 8A
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
AC CHARACTERISTICS READ CYCLE
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High (1)
Notes: 1. Parameter guaranteed, but not tested.
EDI8F32512V
Symbol
JEDEC
t
AVAV
t
AVQV
t
ELQV
t
ELQX
t
EHQZ
t
AVQX
t
GLQV
t
GLQX
t
GHQZ
Alt.
t
RC
t
AA
t
ACS
t
CLZ
t
CHZ
t
OH
t
OE
t
OLZ
t
OHZ
Min
15
15ns
Max
15
15
3
7
3
7
0
7
0
3
3
Min
20
20ns
Max
20
20
3
10
3
8
0
8
Min
25
25ns
Max
25
25
12
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
FIG. 2
READ CYCLE 1 - W# HIGH, G#, E# LOW
½
½½½½
½
½½½½½½½½½
½½½½½½½½½
½
½½½½
½
½½½½
½½½½½½
½
½½½½½½½½½½½½½½½½
½½½½½½
FIG. 3
READ CYCLE 2 - W# HIGH
½
½½½½
½
½
½½½½
½½
½
½½½½
½
½½½½
½½
½
½½½½
½
½½½½
½
½½½½
½
½½½½½½½½½½½½½½½½
½
½½½½
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Aug, 2002
Rev. 8A
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
AC CHARACTERISTICS WRITE CYCLE
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Write to Output in High Z (1)
Data to Write Time
Output Active from End of Write (1)
Notes: 1. Parameter guaranteed, but not tested.
EDI8F32512V
Symbol
JEDEC
t
AVAV
t
ELWH
t
WLEH
t
AVWL
t
AVEL
t
AVWH
t
AHEH
t
WLWH
t
ELEH
t
WHAX
t
EHAX
t
WHDX
t
EHDX
t
WLQZ
t
DVWH
t
DVEH
t
WHQX
Alt.
t
WC
t
CW
t
CW
t
AS
t
AS
t
AW
t
AW
t
WP
t
WP
t
WR
t
WR
t
DH
t
DH
t
WHZ
t
DW
t
DW
t
WLZ
Min
15
10
10
0
0
10
10
10
10
0
0
0
0
0
7
7
3
15ns
Max
Min
20
15
15
0
0
15
15
15
15
0
0
0
0
0
9
9
3
20ns
Max
Min
25
20
20
0
0
15
15
15
15
0
0
0
0
0
10
10
3
25ns
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6
8
12
FIG. 4
WRITE CYCLE 1 - W# CONTROLLED
½
½½½½
½
½½
½
½½½½
½
½½½½
½
½½½½
½
½½½½
½½
½
½
½½½½
½
½½½½
½
½½½½
½½½½½½½½½½
½
½½½½
½
½½½½½½½½½½½½½½½½½½½
½
½½½½
½½½½½½
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Aug, 2002
Rev. 8A
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
FIG. 5
WRITE CYCLE 2 - E# CONTROLLED
EDI8F32512V
½
½½½½
½
½
½½½½
½
½½½½
½½
½
½½½½
½
½½½½
½
½½½½
½½
½
½½½½
½
½½½½
½
½
½½½½½½½½½½½½½½½½½½½
½½½½½½½½½½
½½½½½½
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
Aug, 2002
Rev. 8A
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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参数对比
与EDI8G32512V15MMC相近的元器件有:EDI8G32512V25MMC。描述及对比如下:
型号 EDI8G32512V15MMC EDI8G32512V25MMC
描述 SRAM Module, 512KX32, 15ns, CMOS, SIMM-72 SRAM Module, 512KX32, 25ns, CMOS, SIMM-72
是否Rohs认证 不符合 不符合
包装说明 SIMM-72 SIMM-72
Reach Compliance Code unknown unknown
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