型号
- 型号
- 关键词
DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78,
厂商名称：Micron Technology
厂商官网：http://www.mdtic.com.tw/
器件标准：
| 型号 | EDJ1108BDSE-AE-F | EDJ1108BDSE-GL-F | EDJ1108BDSE-GN-F |
|---|---|---|---|
| 描述 | DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78, | DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, | DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology |
| 包装说明 | FBGA, BGA78,9X13,32 | FBGA, BGA78,9X13,32 | FBGA, BGA78,9X13,32 |
| Reach Compliance Code | compli | compliant | compliant |
| 最长访问时间 | 0.3 ns | 0.225 ns | 0.225 ns |
| 最大时钟频率 (fCLK) | 533 MHz | 800 MHz | 800 MHz |
| I/O 类型 | COMMON | COMMON | COMMON |
| 交错的突发长度 | 4,8 | 4,8 | 4,8 |
| JESD-30 代码 | R-PBGA-B78 | R-PBGA-B78 | R-PBGA-B78 |
| 内存密度 | 1073741824 bi | 1073741824 bit | 1073741824 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | 8 | 8 |
| 端子数量 | 78 | 78 | 78 |
| 字数 | 134217728 words | 134217728 words | 134217728 words |
| 字数代码 | 128000000 | 128000000 | 128000000 |
| 组织 | 128MX8 | 128MX8 | 128MX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | FBGA | FBGA | FBGA |
| 封装等效代码 | BGA78,9X13,32 | BGA78,9X13,32 | BGA78,9X13,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
| 电源 | 1.5 V | 1.5 V | 1.5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 |
| 连续突发长度 | 4,8 | 4,8 | 4,8 |
| 最大压摆率 | 0.27 mA | 0.35 mA | 0.35 mA |
| 标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V |
| 表面贴装 | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS |
| 端子形式 | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |