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EDS2516APTA-75TI

256M bits SDRAM WTR (Wide Temperature Range)

器件类别：存储    存储   

厂商名称：ELPIDA

厂商官网：http://www.elpida.com/en

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ELPIDA
零件包装代码
TSOP2
包装说明
TSOP2, TSOP54,.46,32
针数
54
Reach Compliance Code
unknow
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
5.4 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
133 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PDSO-G54
JESD-609代码
e0
长度
22.22 mm
内存密度
268435456 bi
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
54
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSOP54,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
1,2,4,8
最大待机电流
0.002 A
最大压摆率
0.22 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
PRELIMINARY DATA SHEET
256M bits SDRAM
WTR (Wide Temperature Range)
EDS2504APTA-TI (64M words
×
4 bits)
EDS2508APTA-TI (32M words
×
8 bits)
EDS2516APTA-TI (16M words
×
16 bits)
Description
The EDS2504AP is a 256M bits SDRAM organized as
16,777,216 words
×
4 bits
×
4 banks. The EDS2508
AP is a 256M bits SDRAM organized as 8,388,608
words
×
8 bits
×
4 banks. The EDS2516 AP is a 256M
bits SDRAM organized as 4194304 words
×
16 bits
×
4
banks. All inputs and outputs are referred to the rising
edge of the clock input. It is packaged in standard 54-
pin plastic TSOP (II).
Pin Configurations
/xxx indicates active low signal.
54-pin TSOP
VDD VDD
NC DQ0
NC
NC
DQ0 DQ1
NC
NC
NC DQ2
NC
NC
DQ1 DQ3
NC
VDD
NC
/WE
/CAS
/RAS
/CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
VDD
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS VSS VSS
DQ15 DQ7 NC
VSSQ VSSQ VSSQ
VDDQ VDDQ VDDQ
DQ14 NC NC
DQ13 DQ6 DQ3
VDDQ VDDQ VDDQ
VSSQ VSSQ VSSQ
Features
•
•
•
•
•
3.3V power supply
Clock frequency: 133MHz (max.)
LVTTL interface
Single pulsed /RAS
4 banks can operate simultaneously and
independently
•
Burst read/write operation and burst read/single write
operation capability
•
Programmable burst length (BL): 1, 2, 4, 8, full page
•
2 variations of burst sequence
Sequential (BL = 1, 2, 4, 8)
Interleave (BL = 1, 2, 4, 8)
•
Programmable /CAS latency (CL): 2, 3
•
Byte control by DQM
: DQM (EDS2504/08AP)
: UDQM, LDQM (EDS2516AP)
•
Refresh cycles: 8192 refresh cycles/64ms
•
2 variations of refresh
Auto refresh
Self refresh
•
Ambient temperature range: –40 to +85°C
DQ12 NC NC
DQ11 DQ5 NC
VSSQ VSSQ VSSQ
VDDQ VDDQ VDDQ
DQ10 NC NC
DQ9 DQ4 DQ2
VDDQ VDDQ VDDQ
VSSQ VSSQ VSSQ
NC DQ7
VDD VDD
NC LDQM
/WE /WE
/CAS /CAS
/RAS /RAS
/CS
/CS
BA0 BA0
BA1 BA1
A10 A10
A0
A0
A1
A1
A2
A2
A3
A3
VDD VDD
DQ8 NC
VSS VSS
NC
NC
UDQM DQM
CLK CLK
CKE CKE
A12 A12
A11 A11
A9
A9
A8
A8
A7
A7
A6
A6
A5
A5
A4
A4
VSS VSS
NC
VSS
NC
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
X 16
X8
X4
(Top view)
A0 to A12,
BA0, BA1
Address input
Bank select address
DQ0 to DQ15
Data-input/output
Chip select
/CS
Row address strobe
/RAS
/CAS
Column address strobe
/WE
Write enable
DQM
CKE
CLK
VDD
VSS
Input/output mask
Clock enable
Clock input
Power for internal circuit
Ground for internal circuit
VDDQ
Power for DQ circuit
VSSQ
Ground for DQ circuit
NC
No connection
Document No. E0248E10 (Ver. 1.0)
Date Published March 2002 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2002
EDS2504APTA/08APTA/16APTA-TI
Ordering Information
Part number
EDS2504APTA-7ATI
EDS2504APTA-75TI
EDS2508APTA-7ATI
EDS2508APTA-75TI
EDS2516APTA-7ATI
EDS2516APTA-75TI
Mask
Version
P
Organization
(words
×
bits)
64M
×
4
32M
×
8
16M
×
16
Internal Banks
4
Clock frequency
MHz (max.)
133
/CAS latency
2, 3
3
2, 3
3
2, 3
3
Package
54-pin Plastic
TSOP (II)
Part Number
E D S 25 04 A P TA - 7A TI
Elpida Memory
Material Type
D: Mono
Function
S: SDRAM
Density & Bank
25: 256M/4 Banks
Bit Organization
04: x4
08: x8
16: x16
Interface
A: 3.3V, LVTTL
Mask Revision
Package
TA: TSOP (II)
Speed
7A: 133MHz/CL2, 3
75: 133MHz/CL3
100MHz/CL2
Wide Temperature Range
TI:
−40
to +85°C
Preliminary Data Sheet E0248E10 (Ver. 1.0)
2
EDS2504APTA/08APTA/16APTA-TI
CONTENTS
Description .................................................................................................................................................... 1
Features ........................................................................................................................................................ 1
Pin Configurations ......................................................................................................................................... 1
Ordering Information ..................................................................................................................................... 2
Part Number .................................................................................................................................................. 2
Electrical Specifications................................................................................................................................. 4
Block Diagram ............................................................................................................................................... 8
Pin Function ................................................................................................................................................ 13
Command Operation ................................................................................................................................... 15
Simplified State Diagram............................................................................................................................. 23
Mode Register Configuration ...................................................................................................................... 24
Power-up sequence .................................................................................................................................... 25
Operation of the SDRAM ............................................................................................................................ 26
Timing Waveforms ...................................................................................................................................... 42
Package Drawing ........................................................................................................................................ 48
Recommended Soldering Conditions.......................................................................................................... 49
Revision History .......................................................................................................................................... 52
Preliminary Data Sheet E0248E10 (Ver. 1.0)
3
EDS2504APTA/08APTA/16APTA-TI
Electrical Specifications
•
All voltages are referenced to VSS (GND).
•
After power up, wait more than 100
µs
and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
VT
VDD
IOS
PD
TA
Tstg
Rating
–0.5 to VDD + 0.5 (≤
4.6 (max.))
–0.5 to +4.6
50
1.0
–40 to +85
–55 to +125
Unit
V
V
mA
W
°C
°C
Note
Notes: 1. Respect to VSS.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = –40 to +85°C)
°
Parameter
Supply voltage
Symbol
VDD, VDDQ
VSS, VSSQ
Input high voltage
Input low voltage
VIH
VIL
min.
3.0
0
2.0
–0.3
max.
3.6
0
VDD + 0.3
0.8
Unit
V
V
V
V
Notes
1, 2
3
1, 4
1, 5
Notes: 1.
2.
3.
4.
5.
All voltage referred to VSS.
The supply voltage with all VDD and VDDQ pins must be on the same level.
The supply voltage with all VSS and VSSQ pins must be on the same level.
VIH (max.) = VDD + 2.0 V for pulse width
≤
3ns at VDD.
VIL (min.) = VSS – 2.0 V for pulse width
≤
3ns at VSS.
Preliminary Data Sheet E0248E10 (Ver. 1.0)
4
EDS2504APTA/08APTA/16APTA-TI
DC Characteristics 1 (TA = –40 to +85°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
°
Parameter
/CAS latency
Operating current
Symbol
ICC1
ICC1
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Standby current in non
power down (input signal
stable)
Active standby current in
power down
Active standby current in
power down (input signal
stable)
Active standby current in
non power down
Active standby current in
non power down (input
signal stable)
Burst operating current
Refresh current
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC5
Self refresh current
ICC6
-7A
-75
Grade
-7A
-75
max.
×
4
130
110
3
2
20
9
4
3
30
15
130
250
220
3
×
8
130
110
3
2
20
9
4
3
30
15
135
250
220
3
×
16
135
115
3
2
20
9
4
3
30
15
145
250
220
3
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Test condition
Burst length = 1
tRC = min.
Burst length = 1
tRC = min.
CKE = VIL, tCK = min.
CKE = VIL, tCK =
∞
CKE, /CS = VIH,
tCK = min.
CKE = VIH, tCK =
∞,
/CS = VIH
CKE = VIL, tCK = min.
CKE = VIL, tCK =
∞
CKE, /CS = VIH,
tCK = min.
CKE = VIH, tCK =
∞,
/CS = VIH
tCK = min., BL = 4
tRC = min.
tRC = min.
VIH
≥
VDD
– 0.2V
VIL
≤
0.2V
Notes
1, 2, 3
6
7
4
8
1, 2, 6
2, 7
1, 2, 4
2, 8
1, 2, 5
3
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
Preliminary Data Sheet E0248E10 (Ver. 1.0)
5
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参数对比
与EDS2516APTA-75TI相近的元器件有：EDS2504APTA、EDS2504APTA-TI、EDS2504APTA-75TI、EDS2504APTA-7ATI、EDS2508APTA-TI、EDS2508APTA-75TI、EDS2508APTA-7ATI、EDS2516APTA-7ATI、EDS2516APTA-TI。描述及对比如下：
型号 EDS2516APTA-75TI EDS2504APTA EDS2504APTA-TI EDS2504APTA-75TI EDS2504APTA-7ATI EDS2508APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2516APTA-7ATI EDS2516APTA-TI
描述 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range) 256M bits SDRAM WTR (Wide Temperature Range)
是否无铅 含铅 - - 含铅 含铅 - 含铅 含铅 含铅 -
是否Rohs认证 不符合 - - 不符合 不符合 - 不符合 不符合 不符合 -
厂商名称 ELPIDA - - ELPIDA ELPIDA - ELPIDA ELPIDA ELPIDA -
零件包装代码 TSOP2 - - TSOP2 TSOP2 - TSOP2 TSOP2 TSOP2 -
包装说明 TSOP2, TSOP54,.46,32 - - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 -
针数 54 - - 54 54 - 54 54 54 -
Reach Compliance Code unknow - - unknow unknow - unknow unknow unknow -
ECCN代码 EAR99 - - EAR99 EAR99 - EAR99 EAR99 EAR99 -
访问模式 FOUR BANK PAGE BURST - - FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST -
最长访问时间 5.4 ns - - 5.4 ns 5.4 ns - 5.4 ns 5.4 ns 5.4 ns -
其他特性 AUTO/SELF REFRESH - - AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH -
最大时钟频率 (fCLK) 133 MHz - - 133 MHz 133 MHz - 133 MHz 133 MHz 133 MHz -
I/O 类型 COMMON - - COMMON COMMON - COMMON COMMON COMMON -
交错的突发长度 1,2,4,8 - - 1,2,4,8 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8 -
JESD-30 代码 R-PDSO-G54 - - R-PDSO-G54 R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 -
JESD-609代码 e0 - - e0 e0 - e0 e0 e0 -
长度 22.22 mm - - 22.22 mm 22.22 mm - 22.22 mm 22.22 mm 22.22 mm -
内存密度 268435456 bi - - 268435456 bi 268435456 bi - 268435456 bi 268435456 bi 268435456 bi -
内存集成电路类型 SYNCHRONOUS DRAM - - SYNCHRONOUS DRAM SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM -
内存宽度 16 - - 4 4 - 8 8 16 -
功能数量 1 - - 1 1 - 1 1 1 -
端口数量 1 - - 1 1 - 1 1 1 -
端子数量 54 - - 54 54 - 54 54 54 -
字数 16777216 words - - 67108864 words 67108864 words - 33554432 words 33554432 words 16777216 words -
字数代码 16000000 - - 64000000 64000000 - 32000000 32000000 16000000 -
工作模式 SYNCHRONOUS - - SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
最高工作温度 85 °C - - 85 °C 85 °C - 85 °C 85 °C 85 °C -
最低工作温度 -40 °C - - -40 °C -40 °C - -40 °C -40 °C -40 °C -
组织 16MX16 - - 64MX4 64MX4 - 32MX8 32MX8 16MX16 -
输出特性 3-STATE - - 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE -
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 TSOP2 - - TSOP2 TSOP2 - TSOP2 TSOP2 TSOP2 -
封装等效代码 TSOP54,.46,32 - - TSOP54,.46,32 TSOP54,.46,32 - TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 -
封装形状 RECTANGULAR - - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE, THIN PROFILE - - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE -
峰值回流温度（摄氏度） NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
电源 3.3 V - - 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V -
认证状态 Not Qualified - - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
刷新周期 8192 - - 8192 8192 - 8192 8192 8192 -
座面最大高度 1.2 mm - - 1.2 mm 1.2 mm - 1.2 mm 1.2 mm 1.2 mm -
自我刷新 YES - - YES YES - YES YES YES -
连续突发长度 1,2,4,8 - - 1,2,4,8 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8 -
最大待机电流 0.002 A - - 0.002 A 0.002 A - 0.002 A 0.002 A 0.002 A -
最大压摆率 0.22 mA - - 0.22 mA 0.25 mA - 0.22 mA 0.25 mA 0.25 mA -
最大供电电压 (Vsup) 3.6 V - - 3.6 V 3.6 V - 3.6 V 3.6 V 3.6 V -
最小供电电压 (Vsup) 3 V - - 3 V 3 V - 3 V 3 V 3 V -
标称供电电压 (Vsup) 3.3 V - - 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V -
表面贴装 YES - - YES YES - YES YES YES -
技术 CMOS - - CMOS CMOS - CMOS CMOS CMOS -
温度等级 INDUSTRIAL - - INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL INDUSTRIAL -
端子面层 Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子形式 GULL WING - - GULL WING GULL WING - GULL WING GULL WING GULL WING -
端子节距 0.8 mm - - 0.8 mm 0.8 mm - 0.8 mm 0.8 mm 0.8 mm -
端子位置 DUAL - - DUAL DUAL - DUAL DUAL DUAL -
处于峰值回流温度下的最长时间 NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
宽度 10.16 mm - - 10.16 mm 10.16 mm - 10.16 mm 10.16 mm 10.16 mm -
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