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EDY4016AABG-GX-F-D

IC DRAM 4G PARALLEL 96FBGA

器件类别:存储   

厂商名称:Micron Technology

厂商官网:http://www.mdtic.com.tw/

器件标准:

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器件参数
参数名称
属性值
存储器类型
易失
存储器格式
DRAM
技术
SDRAM - DDR4
存储容量
4Gb (256M x 16)
时钟频率
1.33GHz
存储器接口
并联
电压 - 电源
1.14 V ~ 1.26 V
工作温度
0°C ~ 95°C(TC)
安装类型
表面贴装
封装/外壳
96-TFBGA
供应商器件封装
96-FBGA(7.5x13.5)
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4Gb: x16 DDR4 SDRAM
Features
DDR4 SDRAM
EDY4016A - 256Mb x 16
Features
V
DD
= V
DDQ
= 1.2V ±60mV
V
PP
= 2.5V, –125mV/+250mV
On-die, internal, adjustable V
REFDQ
generation
1.2V pseudo open-drain I/O
T
C
of 0°C to 95°C
– 64ms, 8192-cycle refresh at 0°C to 85°C
– 32ms at 85°C to 95°C
8 internal banks: 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register READ and WRITE capability
Write and read leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination
(ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
JEDEC JESD-79-4 compliant
Options
1
• Revision
• FBGA package size
– 96-ball (7.5mm x 13.5mm)
• Timing – cycle time
– 0.625ns @ CL = 24 (DDR4-3200)
– 0.750ns @ CL = 19 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
• Packaging
– Lead-free (RoHS-compliant) and hal-
ogen-free
Notes:
Marking
A
BG
-JD
-GX
-DR
-F
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
2. Restricted and limited availability.
Table 1: Key Timing Parameters
Speed Grade
-JD
1
-GX
2
-DR
3
Notes:
Data Rate (MT/s)
3200
2666
2400
Target
t
RCD-
t
RP-CL
24-24-24
19-19-19
16-16-16
t
RCD
(ns)
t
RP
(ns)
CL (ns)
15.0
14.25
13.32
15.0
14.25
13.32
15.0
14.25
13.32
1. Backward compatible to 2666 CL = 20, 2400 CL = 18), 2133 CL = 16, 1866 CL = 14, 1600 CL = 12.
2. Backward compatible to 2400 CL = 17, 2133 CL = 15, 1866 CL = 13, 1600 CL = 11.
3. Backward compatible to 2133 CL = 15, 1866 CL = 13, 1600 CL = 11.
Table 2: Addressing
Parameter
Number of bank groups
Bank group address
256 Meg x 16
2
BG0
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
4Gb: x16 DDR4 SDRAM
Features
Table 2: Addressing (Continued)
Parameter
Bank count per group
Bank address in bank group
Row addressing
Column addressing
Page size
1
Note:
256 Meg x 16
4
BA[1:0]
32K (A[14:0])
1K (A[9:0])
2KB
1. Page size is per bank, calculated as follows:
Page size = 2
COLBITS
× ORG/8, where COLBIT = the number of column address bits and ORG = the number of
DQ bits.
Micron Memory Japan DDR4 Part Numbering
Figure 1: 4Gb DDR4 Part Numbers
E D Y 40 16 A A BG - JD - F- D
Manufacturer:
Micron Memory Japan
Packaging: Packaged device
Product Type: DDR4
Density: 4Gb
Organization: x16
Power Supply/V
DDQ
Term.: 1.2V
Die revision
Speed: JD = DDR4-3200 (24-24-24)
GX = DDR4-2666 (19-19-19)
DR = DDR4-2400 (16-16-16)
Package: FBGA
Packing Media: D = Dry pack (tray)
R = Tape and Reel
Packaging: Lead-free (RoHS-compliant)
and halogen-free
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
4Gb: x16 DDR4 SDRAM
Features
Contents
General Notes and Description .......................................................................................................................
Description ................................................................................................................................................
Industrial Temperature ...............................................................................................................................
General Notes ............................................................................................................................................
Definitions of the Device-Pin Signal Level ...................................................................................................
Definitions of the Bus Signal Level ...............................................................................................................
Ball Assignments ............................................................................................................................................
Ball Descriptions ............................................................................................................................................
Package Dimensions .......................................................................................................................................
State Diagram ................................................................................................................................................
Functional Description ...................................................................................................................................
RESET and Initialization Procedure .................................................................................................................
Power-Up and Initialization Sequence .........................................................................................................
RESET Initialization with Stable Power Sequence .........................................................................................
Uncontrolled Power-Down Sequence ..........................................................................................................
Programming Mode Registers .........................................................................................................................
Mode Register 0 ..............................................................................................................................................
Burst Length, Type, and Order .....................................................................................................................
CAS Latency ...............................................................................................................................................
Test Mode ..................................................................................................................................................
Write Recovery(WR)/READ-to-PRECHARGE ...............................................................................................
DLL RESET .................................................................................................................................................
Mode Register 1 ..............................................................................................................................................
DLL Enable/DLL Disable ............................................................................................................................
Output Driver Impedance Control ...............................................................................................................
ODT R
TT(NOM)
Values ..................................................................................................................................
Additive Latency .........................................................................................................................................
Write Leveling ............................................................................................................................................
Output Disable ...........................................................................................................................................
Termination Data Strobe .............................................................................................................................
Mode Register 2 ..............................................................................................................................................
CAS WRITE Latency ....................................................................................................................................
Low-Power Auto Self Refresh .......................................................................................................................
Dynamic ODT ............................................................................................................................................
Write Cyclic Redundancy Check Data Bus ....................................................................................................
Target Row Refresh Mode ............................................................................................................................
Mode Register 3 ..............................................................................................................................................
Multipurpose Register ................................................................................................................................
WRITE Command Latency When CRC/DM is Enabled .................................................................................
Fine Granularity Refresh Mode ....................................................................................................................
Temperature Sensor Status .........................................................................................................................
Per-DRAM Addressability ...........................................................................................................................
Gear-Down Mode .......................................................................................................................................
Mode Register 4 ..............................................................................................................................................
Post Package Repair Mode ..........................................................................................................................
Soft Post Package Repair Mode ....................................................................................................................
WRITE Preamble ........................................................................................................................................
READ Preamble ..........................................................................................................................................
READ Preamble Training ............................................................................................................................
Temperature-Controlled Refresh .................................................................................................................
17
17
17
17
18
18
19
20
23
24
26
27
27
30
31
31
34
35
36
37
37
37
38
39
40
40
40
40
41
41
42
44
44
44
44
44
46
47
48
48
48
48
48
49
50
51
51
51
51
51
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
4Gb: x16 DDR4 SDRAM
Features
Command Address Latency ........................................................................................................................ 51
Internal V
REF
Monitor ................................................................................................................................. 51
Maximum Power Savings Mode ................................................................................................................... 52
Mode Register 5 .............................................................................................................................................. 53
Data Bus Inversion ..................................................................................................................................... 54
Data Mask .................................................................................................................................................. 55
CA Parity Persistent Error Mode .................................................................................................................. 55
ODT Input Buffer for Power-Down .............................................................................................................. 55
CA Parity Error Status ................................................................................................................................. 55
CRC Error Status ......................................................................................................................................... 55
CA Parity Latency Mode .............................................................................................................................. 55
Mode Register 6 .............................................................................................................................................. 56
t
CCD_L Programming ................................................................................................................................. 57
V
REFDQ
Calibration Enable .......................................................................................................................... 57
V
REFDQ
Calibration Range ........................................................................................................................... 57
V
REFDQ
Calibration Value ............................................................................................................................ 57
Truth Tables ................................................................................................................................................... 58
NOP Command .............................................................................................................................................. 61
DESELECT Command .................................................................................................................................... 61
DLL-Off Mode ................................................................................................................................................ 61
DLL-On/Off Switching Procedures .................................................................................................................. 63
DLL Switch Sequence from DLL-On to DLL-Off ........................................................................................... 63
DLL-Off to DLL-On Procedure .................................................................................................................... 64
Input Clock Frequency Change ....................................................................................................................... 65
Write Leveling ................................................................................................................................................ 67
DRAM Setting for Write Leveling and DRAM TERMINATION Function in that Mode ..................................... 68
Procedure Description ................................................................................................................................ 69
Write-Leveling Mode Exit ............................................................................................................................ 70
Command Address Latency ............................................................................................................................ 72
Low-Power Auto Self Refresh Mode ................................................................................................................. 77
Manual Self Refresh Mode .......................................................................................................................... 77
Multipurpose Register .................................................................................................................................... 79
MPR Reads ................................................................................................................................................. 80
MPR Readout Format ................................................................................................................................. 82
MPR Readout Serial Format ........................................................................................................................ 82
MPR Readout Parallel Format ..................................................................................................................... 83
MPR Readout Staggered Format .................................................................................................................. 84
MPR READ Waveforms ............................................................................................................................... 85
MPR Writes ................................................................................................................................................ 88
MPR WRITE Waveforms .............................................................................................................................. 89
MPR REFRESH Waveforms ......................................................................................................................... 90
Gear-Down Mode ........................................................................................................................................... 93
Maximum Power-Saving Mode ........................................................................................................................ 96
Maximum Power-Saving Mode Entry ........................................................................................................... 96
Maximum Power-Saving Mode Entry in PDA ............................................................................................... 97
CKE Transition During Maximum Power-Saving Mode ................................................................................. 97
Maximum Power-Saving Mode Exit ............................................................................................................. 97
Command/Address Parity ............................................................................................................................... 99
Per-DRAM Addressability .............................................................................................................................. 107
V
REFDQ
Calibration ........................................................................................................................................ 110
V
REFDQ
Range and Levels ........................................................................................................................... 111
V
REFDQ
Step Size ........................................................................................................................................ 111
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
4Gb: x16 DDR4 SDRAM
Features
V
REFDQ
Increment and Decrement Timing .................................................................................................. 112
V
REFDQ
Target Settings ............................................................................................................................... 116
Connectivity Test Mode ................................................................................................................................. 118
Pin Mapping ............................................................................................................................................. 118
Minimum Terms Definition for Logic Equations ......................................................................................... 119
Logic Equations for a x4 Device, When Supported ....................................................................................... 119
Logic Equations for a x8 Device, When Supported ....................................................................................... 120
Logic Equations for a x16 Device ................................................................................................................ 120
CT Input Timing Requirements .................................................................................................................. 120
Post Package Repair and Soft Post Package Repair ........................................................................................... 122
Post Package Repair ................................................................................................................................... 122
PPR Row Repair ......................................................................................................................................... 122
PPR Row Repair - Entry .......................................................................................................................... 122
PPR Row Repair – WRA Initiated (REF Commands Allowed) .................................................................... 123
PPR Row Repair – WR Initiated (REF Commands NOT Allowed) ............................................................... 124
sPPR Row Repair ....................................................................................................................................... 126
PPR/sPPR Support Identifier ...................................................................................................................... 128
Target Row Refresh Mode ............................................................................................................................... 129
ACTIVATE Command .................................................................................................................................... 130
PRECHARGE Command ................................................................................................................................ 131
REFRESH Command ..................................................................................................................................... 131
Temperature-Controlled Refresh Mode .......................................................................................................... 133
TCR Mode – Normal Temperature Range .................................................................................................... 133
TCR Mode – Extended Temperature Range ................................................................................................. 133
Fine Granularity Refresh Mode ....................................................................................................................... 135
Mode Register and Command Truth Table .................................................................................................. 135
t
REFI and
t
RFC Parameters ........................................................................................................................ 135
Changing Refresh Rate ............................................................................................................................... 138
Usage with TCR Mode ................................................................................................................................ 138
Self Refresh Entry and Exit ......................................................................................................................... 138
SELF REFRESH Operation .............................................................................................................................. 140
Self Refresh Abort ...................................................................................................................................... 142
Self Refresh Exit with NOP Command ......................................................................................................... 143
Power-Down Mode ........................................................................................................................................ 145
Power-Down Clarifications – Case 1 ........................................................................................................... 150
Power-Down Entry, Exit Timing with CAL ................................................................................................... 151
ODT Input Buffer Disable Mode for Power-Down ............................................................................................ 154
CRC Write Data Feature ................................................................................................................................. 156
CRC Write Data ......................................................................................................................................... 156
WRITE CRC DATA Operation ...................................................................................................................... 156
DBI_n and CRC Both Enabled .................................................................................................................... 157
DM_n and CRC Both Enabled .................................................................................................................... 157
DM_n and DBI_n Conflict During Writes with CRC Enabled ........................................................................ 157
CRC and Write Preamble Restrictions ......................................................................................................... 157
CRC Simultaneous Operation Restrictions .................................................................................................. 157
CRC Polynomial ........................................................................................................................................ 157
CRC Combinatorial Logic Equations .......................................................................................................... 158
Burst Ordering for BL8 ............................................................................................................................... 159
CRC Data Bit Mapping ............................................................................................................................... 159
CRC Enabled With BC4 .............................................................................................................................. 160
CRC with BC4 Data Bit Mapping ................................................................................................................ 160
CRC Equations for x8 Device in BC4 Mode with A2 = 0 and A2 = 1 ................................................................ 163
PDF: 09005aef85f537bf
4gb_ddr4_dram_2e0d.pdf - Rev. C 10/15 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
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参数对比
与EDY4016AABG-GX-F-D相近的元器件有:EDY4016AABG-DR-F-R TR、EDY4016AABG-GX-F-R TR、EDY4016AABG-JD-F-R TR、EDY4016AABG-DR-F-D、EDY4016AABG-JD-F-D。描述及对比如下:
型号 EDY4016AABG-GX-F-D EDY4016AABG-DR-F-R TR EDY4016AABG-GX-F-R TR EDY4016AABG-JD-F-R TR EDY4016AABG-DR-F-D EDY4016AABG-JD-F-D
描述 IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA
存储器类型 易失 易失 易失 易失 易失 易失
存储器格式 DRAM DRAM DRAM DRAM DRAM DRAM
技术 SDRAM - DDR4 SDRAM - DDR4 SDRAM - DDR4 SDRAM - DDR4 SDRAM - DDR4 SDRAM - DDR4
存储容量 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16)
时钟频率 1.33GHz 1.2GHz 1.33GHz 1.6GHz 1.2GHz 1.6GHz
存储器接口 并联 并联 并联 并联 并联 并联
电压 - 电源 1.14 V ~ 1.26 V 1.14 V ~ 1.26 V 1.14 V ~ 1.26 V 1.14 V ~ 1.26 V 1.14 V ~ 1.26 V 1.14 V ~ 1.26 V
工作温度 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC)
安装类型 表面贴装 表面贴装 表面贴装 表面贴装 表面贴装 表面贴装
封装/外壳 96-TFBGA 96-TFBGA 96-TFBGA 96-TFBGA 96-TFBGA 96-TFBGA
供应商器件封装 96-FBGA(7.5x13.5) 96-FBGA(7.5x13.5) 96-FBGA(7.5x13.5) 96-FBGA(7.5x13.5) 96-FBGA(7.5x13.5) 96-FBGA(7.5x13.5)
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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