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EFM104L

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Rectron

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rectron
包装说明
ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
265
认证状态
Not Qualified
最大重复峰值反向电压
200 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
EFM101L
THRU
EFM107L
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
SMAL
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70 )
0.051 (1.29 )
0.110 ( 2.79 )
0.086 ( 2.18 )
0.180 ( 4.57 )
0.160 ( 4.06 )
0.012 ( 0.305 )
0.006 ( 0.152 )
0.067 ( 1.70 )
0.063 ( 1.60 )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.059 ( 1.50 )
0.035 ( 0.89 )
0.008 ( 0.203 )
0.004 ( 0.102 )
0.209 ( 5.31 )
0.185 ( 4.70 )
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 4)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES :
1. Reverse Re covery Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
4. Thermal Resistance : Mounted on PCB.
@T
A
= 25 C
@T
A
= 100 C
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
qJA
R
qJL
C
J
T
J
, T
STG
EFM101L EFM102L EFM103L EFM104L EFM105L EFM106L EFM107L
UNITS
Volts
Volts
Volts
Amps
Amps
0
50
35
50
100
70
100
150
105
150
200
140
200
1.0
30
85
35
300
210
300
400
280
400
600
420
600
C/W
pF
0
15
-55 to + 150
10
C
SYMBOL
V
F
I
R
trr
EFM101L EFM102L EFM103L EFM104L EFM105L EFM106L EFM107L
UNITS
Volts
mAmps
0.95
5.0
100
35
1.25
1.50
50
nSec
2006-12
RATING AND CHARACTERISTICS CURVES ( EFM101L THRU EFM107L )
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
trr
(+)
25 Vdc
(approx)
(-)
D.U.T
(-)
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR 14/1 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
1.25
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
1000
1.00
0.75
0.50
0.25
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
100
T
A
= 100
O
C
T
A
= 75
O
C
10
T
A
= 25
O
C
1.0
0
25
50
75
100
125
150
175
0.1
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE, (
O
C)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
RATING AND CHARACTERISTICS CURVES ( EFM101L THRU EFM107L )
INSTANTANEOUS FORWARD CURRENT, (A)
PEAK FORWARD SURGE CURRENT, (A)
20
10
3.0
1.0
0.3
0.1
0.03
0.01
0
200
100
T
J
= 25 C
O
8.3ms Single Half Sine-Wave
(JEDED Method)
EFM107L
EFM105L~EFM106L
50
30
20
10
EFM101L~EFM104L
Pulse Width=300uS
1% Duty Cycle
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
200
JUNCTION CAPACITANCE, (pF)
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
60
40
20
10
6
4
2
1
0.1 0.2
0.4
1.0
2
4
10
EFM105L~EFM107L
T
J
= 25
O
C
EFM101L~EFM104L
20
40
100
REVERSE VOLTAGE, (V)
FIG.6 TYPICAL JUNCTION CAPACITANCE
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.060MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58)
REF
Dimensions in inches and (millimeters)
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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参数对比
与EFM104L相近的元器件有:EFM103L、EFM105L、EFM106L。描述及对比如下:
型号 EFM104L EFM103L EFM105L EFM106L
描述 Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 Rectron Rectron Rectron Rectron
包装说明 ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN R-PDSO-C2 ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN ROHS COMPLIANT, PLASTIC, SMAL, 2 PIN
针数 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3 e3 e3
元件数量 1 1 1 1
端子数量 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 265 265 265 265
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 200 V 150 V 300 V 400 V
最大反向恢复时间 0.035 µs 0.035 µs 0.035 µs 0.035 µs
表面贴装 YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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