首页 > 器件类别 >

EL2002CM

Low Power, 180MHz Buffer Amplifier

厂商名称:Intersil ( Renesas )

厂商官网:http://www.intersil.com/cda/home/

下载文档
文档预览
®
T
NT
DUC
PRO LACEME at
E
T
EP
nter
OLE
OBS ENDED R pport Ce m/tsc
al Su
sil.co
OMM
REC Technic ww.inter
NO
Data
ur
Sheet
or w
ct o
onta INTERSIL
c
-
1-888
EL2002
December 1995, Rev. D
FN7021
Low Power, 180MHz Buffer Amplifier
The EL2002 is a low cost monolithic,
high slew rate, buffer amplifier. Built
using the Elantec monolithic
Complementary Bipolar process, this patented buffer has a
-3dB bandwidth of 180MHz, and delivers 100mA, yet draws
only 5mA of supply current. It typically operates from ±15V
power supplies but will work with as little as ±5V.
This high speed buffer may be used in a wide variety of
applications in military, video and medical systems. Typical
examples include fast op-amp output current boosters,
coaxial cable drivers and A/D converter input buffers.
Elantec's products and facilities comply with MIL-I-45208A,
and other applicable quality specifications. For information
on Elantec's processing, see the Elantec document, QRA-1:
Elantec's Processing, Monolithic Integrated Circuits.
Features
• 180MHz bandwidth
• 2000V/µs slew rate
• Low bias current, 3µA typical
• 100mA output current
• 5mA supply current
• Short circuit protected
• Low cost
• Stable with capacitive loads
• Wide supply range ±5V to ±15V
• No thermal runaway
Applications
• Op amp output current booster
• Cable/line driver
• A/D input buffer
• Isolation buffer
Ordering Information
PART NUMBER
EL2002ACN
EL2002CM
EL2002CN
TEMP. RANGE
0°C to +75°C
0°C to +75°C
0°C to +75°C
PACKAGE
P-DIP
20-Pin SOL
P-DIP
PKG. NO.
MDP0031
MDP0027
MDP0031
Pinouts
EL2002
(8-PIN DIP)
TOP VIEW
EL2002
(20-PIN SOL)
TOP VIEW
Manufactured under U.S. Patent No. 4,833,424, 4,827,223 U.K. Patent No. 2217134
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL2002
Absolute Maximum Ratings
(T
A
=25°C)
V
S
Supply Voltage (V+ - V-) . . . . . . . . . . . . . . . . . . . . ±18V or 36V
V
IN
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V or V
S
If the input exceeds the ratings shown (or the supplies) or if the input to output
voltage exceeds ±7.5V then the input current must be limited to ±50mA. See
the applications section for more information.
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . Continuous
A heat sink is required to keep the junction temperature below the absolute
maximum when the output is short circuited.
I
IN
Input Current (See above note) . . . . . . . . . . . . . . . . . . . ±50mA
P
D
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
The maximum power dissipation depends on package type, ambient
temperature and heat sinking. See the characteristic curves for more details.
T
A
T
J
T
ST
Operating Temperature Range . . . . . . . . . . . . . 0°C to +75°C
Operating Junction Temperature. . . . . . . . . . . . . . . . . . 150°C
Storage Temperature . . . . . . . . . . . . . . . . . .-65°C to +150°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Specifications
V
S
= ±15V, R
S
= 50Ω, unless otherwise specified.
TEST CONDITIONS
LIMITS
MIN
-15
-20
-40
-50
-10
-15
-15
-20
1
0.1
0.990
0.985
0.85
0.83
0.83
0.80
±10
±9.5
8
13
15
+100
±95
5
7.5
10
60
50
2.8
1.5
75
+160
±11
0.91
0.93
0.998
3
5
3
10
TYP
5
MAX
+15
+20
+40
+50
+10
+15
+15
+20
mV
mV
mV
mV
µA
µA
µA
µA
MΩ
MΩ
V/V
V/V
V/V
V/V
V/V
V/V
V
V
mA
mA
mA
mA
dB
dB
ns
ns
UNITS
PARAMETER
V
OS
DESCRIPTION
Offset Voltage
V
IN
0
LOAD
TEMP
25°C
T
MIN
, T
MAX
0
25°C
T
MIN
, T
MAX
I
IN
Input Current
0
25°C
T
MIN
, T
MAX
0
25°C
T
MIN
, T
MAX
R
IN
Input Resistance
+12V
100Ω
25°C
T
MIN
, T
MAX
A
V1
Voltage Gain
±12V
25°C
T
MIN
, T
MAX
A
V2
Voltage Gain
±10V
100Ω
25°C
T
MIN
, T
MAX
A
V3
Voltage Gain
with V
S
= ±5V
Output Voltage Swing
±3V
100Ω
25°C
T
MIN
, T
MAX
V
O
±12V
100Ω
25°C
T
MIN
, T
MAX
R
OUT
Output Resistance
±2V
100Ω
25°C
T
MIN
, T
MAX
I
OUT
Output Current
±12V
(Note 1)
25°C
T
MIN
, T
MAX
I
S
Supply Current
0
25°C
T
MIN
, T
MAX
PSRR
Supply Rejection (Note 2)
0
25°C
T
MIN
, T
MAX
t
R
t
D
Rise Time
Propagation Delay
0.5V
0.5V
100Ω
100Ω
25°C
25°C
2
EL2002
Electrical Specifications
PARAMETER
SR
NOTES:
1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12V
IN
and -10V on the output.
2. V
OS
is measured at V
S
+ = +4.5V, V
S
- = -4.5V and V
S
+ = +18V, V
S
- = 18V. Both supplies are changed simultaneously.
3. Slew rate is measured between V
OUT
= +5V and -5V.
V
S
= ±15V, R
S
= 50Ω, unless otherwise specified.
(Continued)
TEST CONDITIONS
DESCRIPTION
Slew Rate (Note 3)
V
IN
±10V
LOAD
100Ω
TEMP
25°C
MIN
1200
LIMITS
TYP
2000
MAX
V/µs
UNITS
3
EL2002
Typical Performance Curves
Offset Voltage
vs Temperature
Voltage Gain
vs Temperature
Output Voltage Swing
vs Temperature
Supply Current
vs Supply Voltage
Voltage Gain
vs Input Voltage
Voltage Gain
vs Source Resistance
Input Bias Current
vs Input Voltage
at Various Temperatures
Input Bias Current
vs Input Voltage
±Slew Rate vs
Supply Voltage
4
EL2002
Typical Performance Curves
(Continued)
Slew Rate
vs Load Capacitance
Voltage Gain vs Frequency
for Various Resistive Loads
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
= 100Ω
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
=
Phase Shift vs Frequency
for Various Capacitive Loads
-3dB Bandwidth
vs Supply Voltage
Power Supply Rejection Ratio
vs Frequency
Output Impedance vs
Frequency
Reverse Isolation vs Frequency
5
查看更多>
参数对比
与EL2002CM相近的元器件有:EL2002、EL2002ACN、EL2002CN。描述及对比如下:
型号 EL2002CM EL2002 EL2002ACN EL2002CN
描述 Low Power, 180MHz Buffer Amplifier Low Power, 180MHz Buffer Amplifier Low Power, 180MHz Buffer Amplifier Low Power, 180MHz Buffer Amplifier
MSP430 F149仿真问题求助
各位神啊, 一段程序需要调用子程序,在Simulator状态下调试时,无论是单步运行,还是连续运行,...
yangzhi1 微控制器 MCU
不同模块用到的变量定义问题,这样做有无问题?
最近读到一些资料:永远不要在.h文件中定义变量! 正确的做法是: /*m1.h*/ extern...
pcwe stm32/stm8
有没有人用过低功耗的光耦?
驱动电流最好about 1mA :o 有没有人用过低功耗的光耦? 我也想用,找到的时候能给我介绍一下...
chyzh 微控制器 MCU
32位通用微控制器加快节能产品上市时间
在瞬息万变的市场环境中,率先将产品投放市场是在商战中取胜的关键,因此,产品开发的速度年年加快...
jameswangsynnex 测试/测量
关于ST的复位。
我看到了ST的芯片带有“embedded reset and po...
qdjxll stm32/stm8
信号调理电路输出电压问题
如图所示上半部分是是一路开关信号的调理电路,输入SW_IN是数字量输入,低电平有效,VCC是12伏...
shaorc 单片机
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消