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EMD3D256M08G1-150CBS1

DRAM 256Mb 1.5V 32Mx8 STT-MRAM

器件类别:存储   

厂商名称:Everspin Technologies

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Everspin Technologies
产品种类
Product Category
DRAM
RoHS
Details
类型
Type
SDRAM - DDR3
Data Bus Width
8 bit
Organization
32 M x 8
封装 / 箱体
Package / Case
BGA-78
Memory Size
256 Mbit
Maximum Clock Frequency
667 MHz
电源电压-最大
Supply Voltage - Max
1.575 V
电源电压-最小
Supply Voltage - Min
1.425 V
Supply Current - Max
220 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 85 C
系列
Packaging
Tray
安装风格
Mounting Style
SMD/SMT
工厂包装数量
Factory Pack Quantity
190
文档预览
EMD3D256M08BS1
EMD3D256M16BS1
FEATURES
256Mb DDR3 Spin-transfer Torque MRAM
Non-volatile 256Mb (32Mb x 8, 16Mb x 16) DDR3
Supports standard DDR3 SDRAM features
V
DD
= 1.5v +/- 0.075v
Up to 667MHz
f
CK (1333MT/sec/pin)
Page size of 512 bits (x8) or 1024 bits (x16)
On-device termination
On-Chip DLL aligns DQ, DQS, DQS transition with CK transition
All addresses and control inputs are latched on rising edge of Clock
Burst length of 8 with programmable Burst Chop length of 4
Standard 10x13mm 78-Ball (x8) or 96-ball (x16) BGA Package
RoHS
INTRODUCTION
The EMD3D256M08/16B 256Mb DDR3 Spin-transfer Torque MRAM (STT-MRAM) is a non-
volatile memory that offers non-volatility and high endurance at DDR3 speeds. The device is
capable of DDR3 operation at rates of up to 1333MT/Sec/Pin. It is designed to comply with
all DDR3 DRAM features including on-device termination (ODT) and internal ZQ calibration
but with the benefit of data persistence and extremely high write cycle endurance. With
Spin-Torque MRAM technology, cell refresh is not required, which greatly simplifies system
design and reduces overhead.
All control and address inputs are synchronized with a pair of externally supplied differential
clocks, with input latching at clock crosspoints. I/Os are synchronized with a pair of bidirec-
tional strobes (DQS, DQS). The device uses a RAS/CAS multiplexing scheme and operates at
1.5V.
Copyright © 2018 Everspin Technologies
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EMD3D256M08BS1/16BS1 Revision 1.2 3/2018
EMD3D256M08BS1
EMD3D256M16BS1
DDR3 DRAM COMPATIBILITY
Everspin DDR3 Spin-Torque MRAMs are fully compatible with DDR3 standards for DRAM operation defined
in JEDEC Standard JESD79-3F, with exceptions and improvements as noted and defined in this data sheet.
The Spin-Torque MRAM is a non-volatile memory. All data in closed/precharged banks are retained in
memory whenever device power is removed for any reason.
Command timing will be different in some cases. See “Table 11 – Timing Parameters” on page 20.
The DDR3 standard applies to densities higher than 256Mb resulting in addressing and page size dif-
ferences.
Burst Type/Burst Order supports only the sequential burst type for CA<2:0 = 000 or 100. See ”Burst
Length, Type and Order” on page 30.
This data sheet will make references to JESD79-3F when the function, timing, parameter or condition
is identical between the MRAM and this standard. The JESD79-3F standard is available on the JEDEC
website , registration is required.
Copyright © 2018 Everspin Technologies
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EMD3D256M08BS1/16BS1 Revision 1.2 3/2018
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EMD3D256M16BS1
TABLE OF CONTENTS
DDR3 DRAM COMPATIBILITY .............................................................................................................2
FUNCTIONAL DESCRIPTION ...............................................................................................................6
Basic Functionality ..........................................................................................................................6
Figure 1 – Simplified State Diagram STT-MRAM ............................................................................................... 7
Figure 2 – Block Diagram (32Mb x 8) STT-MRAM .............................................................................................. 8
Figure 3 – Block Diagram (16Mb x 16) STT-MRAM ........................................................................................... 8
Table 1 – Addressing Scheme by I/O Width ........................................................................................................ 9
PACKAGE BALL ASSIGNMENTS ....................................................................................................... 10
Table 2 – 32Mb x 8 in 78-Ball BGA - Top View ...................................................................................................10
Table 3 – 16Mb x 16 in 96-Ball BGA - Top View.................................................................................................11
BALL FUNCTIONS AND DESCRIPTIONS .......................................................................................... 12
Table 4 – Ball Functions and Descriptions .........................................................................................................12
ABSOLUTE MAXIMUM RATINGS ...................................................................................................... 15
Table 5 – Absolute Maximum Ratings.................................................................................................................15
THERMAL CHARACTERISTICS.......................................................................................................... 16
Table 6 – Thermal Characteristics 78-ball BGA Package ...............................................................................16
Table 7 – Thermal Characteristics 96-ball BGA Package ...............................................................................16
DC CHARACTERISTICS ...................................................................................................................... 17
Table 8 – Power Supply and Input Leakage .....................................................................................................17
Table 9 – Input / Output Capacitance .................................................................................................................18
Table 10 – I
DD
Maximum Limits ............................................................................................................................19
TIMING PARAMETERS ...................................................................................................................... 20
Table 11 – Timing Parameters ................................................................................................................................20
TRUTH TABLES................................................................................................................................... 21
Command Truth Table .................................................................................................................. 21
Copyright © 2018 Everspin Technologies
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Table of Contents (Cont’d)
Table 12 – Command Truth Table .........................................................................................................................21
CKE Truth Table ............................................................................................................................. 23
Table 13 – CKE Truth Table.......................................................................................................................................23
FUNCTIONAL PARAMETERS ............................................................................................................ 24
COMMAND DESCRIPTIONS .............................................................................................................. 25
ACTIVE Command......................................................................................................................... 25
Figure 4 – ACTIVE Command Example: Meeting
t
RRD (MIN) and
t
RCD (MIN)......................................26
PRECHARGE Command ................................................................................................................ 26
Figure 5 – PRECHARGE Command Timing ........................................................................................................26
READ Command ........................................................................................................................... 27
Figure 6 – READ Command Timing ......................................................................................................................27
WRITE Command .......................................................................................................................... 28
Figure 7 – WRITE Burst Operation WL = 5 (AL = 0 CWL = 5, BL8) ...............................................................29
Burst Length, Type and Order ..................................................................................................... 30
Table 14 – Burst Length, Type and Order ...........................................................................................................30
PART NUMBER DECODER ................................................................................................................. 31
Table 15 – 256Mb x8 / x16 STT-MRAM Ordering Part Number Decoder ...............................................31
ORDERING PART NUMBERS ............................................................................................................. 32
Table 16 – Ordering Part Numbers .......................................................................................................................32
Copyright © 2018 Everspin Technologies
4
EMD3D256M08BS1/16BS1 Revision 1.2 3/2018
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EMD3D256M16BS1
Table of Contents (Cont’d)
PACKAGE OUTLINE DRAWING ......................................................................................................... 33
Figure 8 – 78-Ball BGA Package Outline (x8) ....................................................................................................33
Figure 9 – 78-Ball BGA Package Outline (x8) Dimensions............................................................................34
Figure 10 – 96-Ball BGA Package Outline (x16)................................................................................................35
Figure 11 – 96-Ball BGA Package Outline (x16) Dimensions .......................................................................36
Table 17 – Revision History .....................................................................................................................................37
HOW TO CONTACT US ....................................................................................................................... 38
Copyright © 2018 Everspin Technologies
5
EMD3D256M08BS1/16BS1 Revision 1.2 3/2018
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参数对比
与EMD3D256M08G1-150CBS1相近的元器件有:EMD3D256M16G2-150CBS1R。描述及对比如下:
型号 EMD3D256M08G1-150CBS1 EMD3D256M16G2-150CBS1R
描述 DRAM 256Mb 1.5V 32Mx8 STT-MRAM DRAM 256Mb 1.5V 16Mx16 STT-MRAM
Product Attribute Attribute Value Attribute Value
制造商
Manufacturer
Everspin Technologies Everspin Technologies
产品种类
Product Category
DRAM DRAM
RoHS Details Details
类型
Type
SDRAM - DDR3 SDRAM - DDR3
Data Bus Width 8 bit 16 bit
Organization 32 M x 8 16 M x 16
封装 / 箱体
Package / Case
BGA-78 BGA-96
Memory Size 256 Mbit 256 Mbit
Maximum Clock Frequency 667 MHz 667 MHz
电源电压-最大
Supply Voltage - Max
1.575 V 1.575 V
电源电压-最小
Supply Voltage - Min
1.425 V 1.425 V
Supply Current - Max 220 mA 220 mA
最小工作温度
Minimum Operating Temperature
0 C 0 C
最大工作温度
Maximum Operating Temperature
+ 85 C + 85 C
系列
Packaging
Tray Reel
安装风格
Mounting Style
SMD/SMT SMD/SMT
工厂包装数量
Factory Pack Quantity
190 2000
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