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FDG311N
February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Features
•
1.9 A, 20 V. R
DS(ON)
= 0.115
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.150
Ω
@ V
GS
= 2.5 V.
•
•
•
Low gate charge (3nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
Applications
•
•
•
Load switch
Power management
DC/DC converter
D
D
S
1
6
2
5
SC70-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25 C unless otherwise noted
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
°C
±8
1.9
6
0.75
0.48
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.
11
Device
FDG311N
Reel Size
7
Tape Width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDG311N Rev. D
FDG311N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
I
GSS
T
A
= 25 C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
100
-100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
V
GS
= 4.5 V,
I
D
= 1.9 A
I
D
= 1.9 A,
T
J
= 125°C
V
GS
= 2.5 V, I
D
= 1.6 A
V
GS
= 4.5 V, V
DS
= 5 V
0.4
0.9
-3
1.5
V
mV/°C
Ω
0.082 0.115
0.110 0.170
0.105
4
6
0.150
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
A
S
V
DS
= 5 V, I
D
= 0.5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
270
55
20
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 5 V, R
GEN
= 6
Ω
5
9
10
2
12
17
18
6
4.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.9 A,
V
GS
= 4.5 V
3
0.6
0.9
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.42
0.7
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 170°C/W when mounted on a 1 in
2
pad of 2oz copper.
b) 260°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDG311N Rev. D
FDG311N
Typical Characteristics
10
V
GS
= 4.5V
3.5V
3.0V
2.5V
6
2.0V
4
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
2.5V
1.2
1
0.8
3.0V
3.5V
4.0V
4.5V
V
GS
= 2.0V
I
D
, DRAIN CURRENT (A)
8
2
1.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.32
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.9A
V
GS
= 4.5V
I
D
= 1A
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
1.4
1.2
1
T
A
= 125
o
C
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
10
125 C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
8
T
A
= -55
o
C 25
o
C
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
-55
o
C
0.01
6
4
2
0.001
0
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG311N Rev. D
FDG311N
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 1.9A
4
(continued)
500
V
DS
= 5V
10V
CAPACITANCE (pF)
400
C
ISS
f = 1MHz
V
GS
= 0 V
15V
3
300
2
200
1
100
C
OSS
C
RSS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
1ms
10ms
POWER (W)
1
10s
DC
0.1
V
GS
= 4.5V
SINGLE PULSE
o
R
θJA
= 260 C/W
T
A
= 25 C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
30
SINGLE PULSE
24
R
θ
JA
= 260 C/W
T
A
= 25 C
o
o
100ms
1s
18
12
6
0
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
JA
=260 C/W
θ
P(pk)
0.1
0.05
0.1
0.05
0.01
0.02
Single Pulse
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/ t
2
0.01
0.005
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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stm32/stm8
