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FMMT625QTA

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,

器件类别:分立半导体    晶体管   

厂商名称:Diodes Incorporated

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Diodes Incorporated
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
其他特性
HIGH RELIABILITY
最大集电极电流 (IC)
1 A
集电极-发射极最大电压
150 V
配置
SINGLE
最小直流电流增益 (hFE)
30
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
NPN
参考标准
AEC-Q101
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
135 MHz
Base Number Matches
1
文档预览
A Product Line of
Diodes Incorporated
FMMT625
150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
Features
BV
CEO
> 150V
Maximum Continuous Collector Current I
C
= 1A
625mW Power dissipation
h
FE
characterised up to 3.0A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Applications
DC-DC Modules
Power Management Functions
Motor control and drive functions
SOT23
C
E
C
B
Top View
Pin-Out
B
E
Top View
Device Symbol
Ordering Information
(Note 4 & 5)
Product
FMMT625TA
FMMT625QTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
625
625
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3000 units
3000 units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
625
625 = Product Type Marking Code
FMMT625
Document number: DS33237 Rev. 5 - 2
1 of 7
www.diodes.com
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT625
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
150
150
5
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
625
200
194
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT625
Document number: DS33237 Rev. 5 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT625
Thermal Characteristics and Derating information
10
0.7
Max Power Dissipation (W)
I
C
Collector Current (A)
V
CE(sat)
Limited
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
10ms
1ms
100µs
100m
10m
1m
100m
1
10
100
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
220
200
T
amb
=25°C
180
160
140
120
D=0.5
100
80
D=0.1
60
D=0.2
40
D=0.05
20
Single Pulse
0
100µ 1m 10m 100m 1
10
100
Derating Curve
Single Pulse
T
amb
=25°C
Maximum Power (W)
100
1k
10
1
0.1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
FMMT625
Document number: DS33237 Rev. 5 - 2
3 of 7
www.diodes.com
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT625
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
h
FE
Min
150
150
5
-
-
-
200
300
30
-
Typ
300
175
8.3
-
-
-
400
450
45
15
26
110
180
0.85
0.74
135
6
160
1500
Max
-
-
-
100
100
100
-
-
-
-
Unit
V
V
V
nA
nA
nA
-
-
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Transition Frequency
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(on)
t
(off)
-
-
50
200
300
1.0
1.0
-
10
-
-
mV
V
V
MHz
pF
ns
ns
-
-
100
-
-
-
Test Condition
I
C
= 100µA
I
C
= 1mA
I
E
= 100µA
V
CB
=130V
V
EB
= 5V
V
CES
=130V
I
C
= 10mA, V
CE
= 10V
I
C
= 200mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
I
C
= 3A, V
CE
= 10V
I
C
=0.1A, I
B
= 10mA
I
C
=0.1A, I
B
= 1mA
I
C
=1A, I
B
= 50mA
I
C
=1A, I
B
= 50mA
I
C
=1A, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V,
f=100MHz
V
CB
= 10V, f=1MHz
V
CC
= 50V, I
C
= 500mA,
I
B1
= -I
B2
= 50mA
9. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%
FMMT625
Document number: DS33237 Rev. 5 - 2
4 of 7
www.diodes.com
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT625
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FMMT625
Document number: DS33237 Rev. 5 - 2
5 of 7
www.diodes.com
September 2012
© Diodes Incorporated
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参数对比
与FMMT625QTA相近的元器件有:。描述及对比如下:
型号 FMMT625QTA
描述 Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,
是否无铅 不含铅
是否Rohs认证 符合
厂商名称 Diodes Incorporated
包装说明 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
其他特性 HIGH RELIABILITY
最大集电极电流 (IC) 1 A
集电极-发射极最大电压 150 V
配置 SINGLE
最小直流电流增益 (hFE) 30
JESD-30 代码 R-PDSO-G3
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 3
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) 260
极性/信道类型 NPN
参考标准 AEC-Q101
表面贴装 YES
端子面层 Matte Tin (Sn)
端子形式 GULL WING
端子位置 DUAL
处于峰值回流温度下的最长时间 40
晶体管应用 SWITCHING
晶体管元件材料 SILICON
标称过渡频率 (fT) 135 MHz
Base Number Matches 1
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