Preliminary Data Sheet
•
FEATURES
♦
29 dBm Output Power at 1-dB Compression
♦
17 dB Power Gain at 2 GHz
♦
1.0 dB Noise Figure at 2 GHz
♦
42 dBm Output IP3
♦
50% Power-Added Efficiency
FP2250QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
•
DESCRIPTION AND APPLICATIONS
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium
Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25
µm
x 2250
µm
Schottky barrier gate, defined by electron-
beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source
and gate resistance. The epitaxial structure and processing have been optimized for reliable high-
power applications. The FP2250’s active areas are passivated with Si
3
N
4
, and the QFN package is
ideal for low-cost, high-performance applications that require a surface-mount package. Typical
applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,
and other types of wireless infrastructure systems up to 10 GHz.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
Parameter
Saturated Drain-Source Current
FP2250QFN-1
FP2250QFN-2
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
All RF data tested at 2.0 GHz
Symbol
I
DSS
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
560
706
27
16
635
770
29
17
50
1.0
42
705
850
mA
mA
dBm
dB
%
dB
dBm
mA
mS
µA
V
V
V
Min
Typ
Max
Units
•
P-1dB
G-1dB
PAE
NF
IP3
I
MAX
G
M
I
GSO
V
P
V
BDGS
V
BDGD
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 11 mA
I
GS
= 11 mA
I
GD
= 11 mA
840
550
-2.0
-10
-10
115
-0.25
-12
-12
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/18/02
Email:
sales@filss.com
Preliminary Data Sheet
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
T
Ambient
= 22
±
3
°C
FP2250QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
Min
Max
6
-3
I
DSS
15
500
175
175
3.75
Units
V
V
mA
mA
mW
ºC
ºC
W
-65
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
•
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P
TOT
= 3.75W – (0.025W/°C) x T
PACK
where T
PACK
=
source tab lead temperature.
(Bottom of the Package)
•
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
•
PCB PAD LAYOUT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/18/02
Email:
sales@filss.com
Preliminary Data Sheet
•
PACKAGE OUTLINE
FP2250QFN
P
ACKAGED
L
OW
N
OISE
, H
IGH
L
INEARITY
PHEMT
MBC
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
All information and specifications are subject to change without notice.
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
10/18/02
Email:
sales@filss.com
