FRK150D, FRK150R,
FRK150H
June 1998
40A, 100V, 0.055 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-204AE
Features
• 40A, 100V, RDS(on) = 0.055Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
• Gamma Dot
• Photo Current
• Neutron
- 7.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Symbol
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRK150D, R, H
100
100
40
25
100
±20
150
60
1.20
100
40
100
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3221.1
4-1
FRK150D, FRK150R, FRK150H
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(on)
RDS(on)
td(on)
tr
td(off)
tf
QG(th)
QG(on)
QGM
VGP
QGS
QGD
VSD
TT
Rθjc
Rθja
Free Air Operation
ID = 40A, VGD = 0
I = 40A; di/dt = 100A/µs
VDD = 50V, ID = 40A
IGS1 = IGS2
0
≤
VGS
≤
20
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = +20V
VGS = -20V
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125
o
C
Time = 20µs
VGS = 10V, ID = 40A
VGS = 10V, ID = 25A
VDD = 50V, ID = 40A
Pulse Width = 3µs
Period = 300µs, Rg = 25Ω
0
≤
VGS
≤
10 (See Test Circuit)
MIN
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
3.5
58
140
4
15
30
0.6
-
-
-
MAX
-
4.0
100
100
1
0.025
0.25
100
2.32
0.055
170
1120
ns
420
380
15
230
560
16
63
nc
123
1.8
1400
0.83
30
V
ns
o
C/W
UNITS
V
V
nA
nA
mA
A
V
Ω
nc
V
V
DD
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
V
DS
+
CURRENT I
TRANSFORMER
AS
R
L
-
V
GS
= 12V
DUT
0V
R
GS
0V
t
P
50Ω
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
DUT
50Ω
+
V
DD
-
50V-150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
FRK150D, FRK150R, FRK150H
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
(Note 4, 6)
(Note 5, 6)
Gate-Source
Threshold Volts
(Note 4, 6)
(Note 3, 5, 6)
Gate-Body
Leakage Forward
(Note 4, 6)
(Note 5, 6)
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
(Note 2, 5, 6)
Zero-Gate Voltage
Drain Current
(Note 4, 6)
(Note 5, 6)
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/6/89 on TA 17651 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
IGSSF
IGSSR
IGSSR
IDSS
IDSS
VDS(on)
VDS(on)
RDS(on)
RDS(on)
TYPE
FRK150D, R
FRK150H
FRK150D, R
FRK150H
FRK150D, R
FRK150H
FRK150D, R
FRK150H
FRK150D, R
FRK150H
FRK150D, R
FRK150H
FRK150D, R
FRK150H
TEST CONDITIONS
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 80V
VGS = 0, VDS = 80V
VGS = 10V, ID = 40A
VGS = 16V, ID = 40A
VGS = 10V, ID = 25A
VGS = 14V, ID = 25A
MIN
100
95
2.0
1.5
-
-
-
-
-
-
-
-
-
-
MAX
-
-
4.0
4.5
100
200
100
200
25
100
2.31
3.47
0.055
0.083
UNITS
V
V
V
V
nA
nA
nA
nA
µA
µA
V
V
Ω
Ω
4-3
FRK150D, FRK150R, FRK150H
Typical Performance Characteristics
4-4
FRK150D, FRK150R, FRK150H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
E. Group B
- Attributes Data Sheet
- Group A Lot Traveler
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
G. Group B
F. Group C
H. Group C
G. Group D
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-5
嵌入式系统
