FS5AS-10A
High-Speed Switching Use
Nch Power MOS FET
REJ03G0246-0100
Preliminary
Rev.1.00
Aug.20.2004
Features
•
•
•
•
Drive voltage : 10 V
V
DSS
: 500 V
r
DS(ON) (max)
: 1.5
Ω
I
D
: 5 A
Outline
MP-3A
2, 4
4
1
12
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
3
Applications
SMPS, Lamp Ballast, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
Tch
Tstg
—
Ratings
500
±30
5
15
5
65
– 55 to +150
– 55 to +150
0.32
Unit
V
V
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 200
µH
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FS5AS-10A
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(th)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Rth(ch-c)
Min.
500
±30
—
—
2.5
—
—
2.7
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3.0
1.2
2.4
4.5
700
70
15
15
20
90
30
1.5
—
Max.
—
—
±10
1
3.5
1.5
3.0
—
—
—
—
—
—
—
—
2.0
1.92
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Test conditions
I
D
= 1 mA, V
GS
= 0 V
I
G
=
±100 µA,
V
DS
= 0 V
V
GS
=
±25
V, V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V
I
D
= 2 A, V
GS
= 10 V
I
D
= 2 A, V
DS
= 10 V
V
DS
= 25 V, V
GS
= 10 V,
f = 1MHz
V
DD
= 200 V, I
D
= 2 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= 2 A, V
GS
= 0 V
Channel to case
Rev.1.00, Aug.20.2004, page 2 of 6
FS5AS-10A
Performance Curves
Drain Power Dissipation Derating Curve
70
Maximum Safe Operating Area
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
Tc = 25°C
2
Single Pulse
Drain Power Dissipation P
D
(W)
60
Drain Current I
D
(A)
50
40
30
20
10
0
0
50
100
150
200
tw = 10µs
100µs
1ms
DC
10
–1 0
10 2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
10
Output Characteristics (Typical)
5
Tc = 25°C
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
8
V
GS
= 20V
10V
6V
V
GS
= 20V
10V
5V
Tc = 25°C
Pulse Test
4
6V
6
P
D
= 65W
5V
3
4
2
2
1
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
4V
10
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
20
Drain-Source On-State Resistance r
DS(ON)
(Ω)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Tc = 25°C
Pulse Test
16
On-State Resistance vs.
Drain Current (Typical)
4.0
Tc = 25°C
Pulse Test
3.2
I
D
= 8A
12
2.4
V
GS
= 10V
1.6
8
5A
3A
20V
4
0.8
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
0
4
8
12
16
20
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.1.00, Aug.20.2004, page 3 of 6
FS5AS-10A
Forward Transfer Admittance vs.
Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
–1
10
Transfer Characteristics (Typical)
10
Drain Current I
D
(A)
8
Tc = 25°C
V
DS
= 10V
Pulse Test
V
DS
= 10V
Pulse Test
6
4
2
Tc = 125°C
75°C
25°C
0
0
4
8
12
16
20
2 3 4 5 7 10
0
2 3 4 5 7 10
1
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10
3
7
5
3
2
10
2
7
5
3
2
5
4
3
Switching Characteristics (Typical)
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
td(off)
Ciss
Switching Time (ns)
2
10
2
7
5
4
3
2
10
1
7
5
10
–1
Capacitance (pF)
Coss
tf
tr
td(on)
Crss
10
1
Tch = 25°C
7
5
f = 1MHz
3
V
GS
= 0V
2
2 3 5 7 10
0
2 3 5 710
1
2 3 5 7 10
2
2 3
2 3 4 5 7 10
0
2 3 4 5 7 10
1
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
10
Drain Current I
D
(A)
Source-Drain Diode Forward
Characteristics (Typical)
V
GS
= 0V
Pulse Test
Tc = 125°C
75°C
6
Gate-Source Voltage V
GS
(V)
Tch = 25°C
I
D
= 5A
V
DS
= 100V
12
Source Current I
S
(A)
16
8
25°C
200V
8
400V
4
4
2
0
0
8
16
24
32
40
0
0
0.8
1.6
2.4
3.2
4.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.1.00, Aug.20.2004, page 4 of 6
FS5AS-10A
On-State Resistance vs.
Channel Temperature (Typical)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
r
DS(ON)
(t°C)
r
DS(ON)
(25°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Threshold Voltage vs.
Channel Temperature (Typical)
5.0
V
GS
= 10V
I
D
= 2A
Pulse Test
V
DS
= 10V
I
D
= 1mA
4.0
Drain-Source On-State Resistance
Drain-Source On-State Resistance
3.0
2.0
1.0
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
10
1
7
5
3
D = 1.0
2
0.5
10
0
7
0.2
5
3
2
V
GS
= 0V
I
D
= 1mA
1.2
1.0
0.8
P
DM
0.6
0.4
–50
0
50
100
150
10
–1
10
–4
2 3 57 10
–3
2 3 57 10
–2
2 3 57 10
-1
2 3 57 10
0
2 3 5710
1
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D = tw
T
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
D.U.T.
R
L
Vin
Vout
R
GS
V
DD
Vout
Monitor
Switching Waveform
90%
R
GEN
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
