Power Field-Effect Transistor, 10A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
厂商名称:International Rectifier ( Infineon )
厂商官网:http://www.irf.com/
下载文档型号 | FSGL134R3 | FSGL134R4 | FSGL134D1 |
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描述 | Power Field-Effect Transistor, 10A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 | Power Field-Effect Transistor, 10A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 | Power Field-Effect Transistor, 10A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 |
是否无铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
零件包装代码 | BCY | BCY | BCY |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
针数 | 4 | 4 | 4 |
Reach Compliance Code | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 150 V | 150 V | 150 V |
最大漏极电流 (ID) | 10 A | 10 A | 10 A |
最大漏源导通电阻 | 0.125 Ω | 0.125 Ω | 0.125 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205AF | TO-205AF | TO-205AF |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609代码 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | 235 | 235 | 235 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 40 A | 40 A | 40 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |