G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style GBU
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case:
GBU
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes the cathode end
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
6.0 A
200 V, 600 V, 800 V
150 A
5 µA
1.05 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetive peak reverse voltage
Maximum RMS reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified T
C
= 100 °C
(1)
output current at
T
A
= 25 °C
(2)
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
2
t
T
J,
T
STG
G5SBA20
200
140
200
G5SBA60
600
420
600
6.0
2.8
150
93
- 55 to + 150
G5SBA80
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage per diode
Maximum DC reverse current at rated DC blocking
voltage per diode
TEST CONDITIONS SYMBOL
3.0 A
T
J
= 25 °C
T
J
= 125 °C
V
F
I
R
G5SBA20
G5SBA60
1.05
5.0
300
G5SBA80
UNIT
V
µA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
SYMBOL
R
θJA
(2)
R
θJC
(1)
G5SBA20
G5SBA60
22
3.4
G5SBA80
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
G5SBA60-E3/45
G5SBA60-E3/51
UNIT WEIGHT (g)
3.565
3.565
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
150
Average Forward Output Current (A)
Heatsink Mounting, T
C
6.0
Peak Forward Surge Current (A)
T
J
= T
J
Max.
Single Sine-Wave
100
4.0
P.C.B. Mounting, T
A
50
2.0
1.0 Cycle
0
0
50
100
150
0
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88608
Revision: 15-Dec-08
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
100
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
Junction Capacitance (pF)
1.6
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
100
0.1
0.01
0.4
10
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
T
J
= 125 °C
100
100
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (µA)
10
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type GBU
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.140 (3.56)
0.130 (3.30)
9° TYP.
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
5° TYP.
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.075 (1.90)
0.085 (2.16)
0.065 (1.65)
0.075
(1.9) R
.
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead
by beveled
corner
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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