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G5SBA20/51-E3

DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
PLASTIC, CASE GBU, 4 PIN
针数
4
制造商包装代码
CASE GBU
Reach Compliance Code
unknown
文档预览
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style GBU
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case:
GBU
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes the cathode end
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
6.0 A
200 V, 600 V, 800 V
150 A
5 µA
1.05 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetive peak reverse voltage
Maximum RMS reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified T
C
= 100 °C
(1)
output current at
T
A
= 25 °C
(2)
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
2
t
T
J,
T
STG
G5SBA20
200
140
200
G5SBA60
600
420
600
6.0
2.8
150
93
- 55 to + 150
G5SBA80
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage per diode
Maximum DC reverse current at rated DC blocking
voltage per diode
TEST CONDITIONS SYMBOL
3.0 A
T
J
= 25 °C
T
J
= 125 °C
V
F
I
R
G5SBA20
G5SBA60
1.05
5.0
300
G5SBA80
UNIT
V
µA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
SYMBOL
R
θJA
(2)
R
θJC
(1)
G5SBA20
G5SBA60
22
3.4
G5SBA80
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
G5SBA60-E3/45
G5SBA60-E3/51
UNIT WEIGHT (g)
3.565
3.565
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
150
Average Forward Output Current (A)
Heatsink Mounting, T
C
6.0
Peak Forward Surge Current (A)
T
J
= T
J
Max.
Single Sine-Wave
100
4.0
P.C.B. Mounting, T
A
50
2.0
1.0 Cycle
0
0
50
100
150
0
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88608
Revision: 15-Dec-08
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
100
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
Junction Capacitance (pF)
1.6
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
100
0.1
0.01
0.4
10
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
T
J
= 125 °C
100
100
Transient Thermal Impedance (°C/W)
80
100
Instantaneous Reverse Current (µA)
10
10
1
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type GBU
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.140 (3.56)
0.130 (3.30)
9° TYP.
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
5° TYP.
0.710 (18.0)
0.690 (17.5)
0.085 (2.16)
0.075 (1.90)
0.085 (2.16)
0.065 (1.65)
0.075
(1.9) R
.
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead
by beveled
corner
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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参数对比
与G5SBA20/51-E3相近的元器件有:G5SBA60/72-E3、G5SBA60/51-E3、G5SBA60/72、G5SBA60/51、G5SBA20-E3/72、G5SBA20/72-E3、G5SBA20/72、G5SBA20/51。描述及对比如下:
型号 G5SBA20/51-E3 G5SBA60/72-E3 G5SBA60/51-E3 G5SBA60/72 G5SBA60/51 G5SBA20-E3/72 G5SBA20/72-E3 G5SBA20/72 G5SBA20/51
描述 DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN Bridge Rectifier Diode, 6A, 200V V(RRM), DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode Bridge Rectifier Diode, 1 Phase, 2.8A, 200V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 2.8A, 200V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN
是否Rohs认证 符合 符合 符合 不符合 不符合 符合 符合 不符合 不符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
厂商名称 Vishay(威世) - - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 PLASTIC, CASE GBU, 4 PIN R-PSFM-T4 PLASTIC, CASE GBU, 4 PIN R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
针数 4 4 4 4 4 - 4 4 4
制造商包装代码 CASE GBU CASE GBU CASE GBU CASE GBU CASE GBU - CASE GBU CASE GBU CASE GBU
其他特性 - UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
外壳连接 - ISOLATED - ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
配置 - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 - SILICON - SILICON SILICON - SILICON SILICON SILICON
二极管类型 - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 - R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609代码 - e3 - e0 e0 - e3 e0 e0
最大非重复峰值正向电流 - 150 A - 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 - 4 - 4 4 4 4 4 4
相数 - 1 - 1 1 - 1 1 1
端子数量 - 4 - 4 4 - 4 4 4
最高工作温度 - 150 °C - - 150 °C 150 °C 150 °C - 150 °C
最大输出电流 - 2.8 A - 2.8 A 2.8 A 6 A 2.8 A 2.8 A 2.8 A
封装主体材料 - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) - NOT APPLICABLE - NOT SPECIFIED NOT SPECIFIED - NOT APPLICABLE NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 600 V - 600 V 600 V 200 V 200 V 200 V 200 V
表面贴装 - NO - NO NO NO NO NO NO
端子面层 - MATTE TIN - TIN LEAD TIN LEAD - MATTE TIN TIN LEAD TIN LEAD
端子形式 - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 - SINGLE - SINGLE SINGLE - SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 - NOT APPLICABLE - NOT SPECIFIED NOT SPECIFIED - NOT APPLICABLE NOT SPECIFIED NOT SPECIFIED
【评选】2013年3月(首次)MSP430月度最佳项目评选
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