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GS8322Z18E-225M

ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

器件类别:存储    存储   

厂商名称:GSI Technology

厂商官网:http://www.gsitechnology.com/

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器件:GS8322Z18E-225M

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
15 X 17 MM, 1 MM PITCH, FPBGA-165
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
最长访问时间
2.7 ns
其他特性
FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY
最大时钟频率 (fCLK)
225 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B165
长度
17 mm
内存密度
37748736 bit
内存集成电路类型
ZBT SRAM
内存宽度
18
功能数量
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
2MX18
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装等效代码
BGA165,11X15,40
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE
并行/串行
PARALLEL
电源
2.5/3.3 V
认证状态
Not Qualified
座面最大高度
1.5 mm
最大待机电流
0.2 A
最小待机电流
2.3 V
最大压摆率
0.28 mA
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
宽度
15 mm
参数对比
与GS8322Z18E-225M相近的元器件有:GS8322Z72C-225M、GS8322Z72C-225MT、GS8322Z36E-225M、GS8322Z36E-225MT、GS8322Z18E-225MT、GS8322Z18B-225M、GS8322Z18B-225MT、GS8322Z36B-225M、GS8322Z36B-225MT。描述及对比如下:
型号 GS8322Z18E-225M GS8322Z72C-225M GS8322Z72C-225MT GS8322Z36E-225M GS8322Z36E-225MT GS8322Z18E-225MT GS8322Z18B-225M GS8322Z18B-225MT GS8322Z36B-225M GS8322Z36B-225MT
描述 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 15 X 17 MM, 1 MM PITCH, FPBGA-165 LBGA, BGA209,11X19,40 LBGA, BGA209,11X19,40 15 X 17 MM, 1 MM PITCH, FPBGA-165 15 X 17 MM, 1 MM PITCH, FPBGA-165 15 X 17 MM, 1 MM PITCH, FPBGA-165 BGA, BGA119,7X17,50 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
针数 165 209 209 165 165 165 119 119 119 119
Reach Compliance Code compliant compliant compliant unknown unknown unknown compliant unknown compliant unknown
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 2.7 ns 4.4 ns 4.4 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY
最大时钟频率 (fCLK) 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B165 R-PBGA-B209 R-PBGA-B209 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
长度 17 mm 22 mm 22 mm 17 mm 17 mm 17 mm 22 mm 22 mm 22 mm 22 mm
内存密度 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 18 72 72 36 36 18 18 18 36 36
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 165 209 209 165 165 165 119 119 119 119
字数 2097152 words 524288 words 524288 words 1048576 words 1048576 words 2097152 words 2097152 words 2097152 words 1048576 words 1048576 words
字数代码 2000000 512000 512000 1000000 1000000 2000000 2000000 2000000 1000000 1000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 2MX18 512KX72 512KX72 1MX36 1MX36 2MX18 2MX18 2MX18 1MX36 1MX36
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA BGA BGA BGA BGA
封装等效代码 BGA165,11X15,40 BGA209,11X19,40 BGA209,11X19,40 BGA165,11X15,40 BGA165,11X15,40 BGA165,11X15,40 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.5 mm 1.7 mm 1.7 mm 1.5 mm 1.5 mm 1.5 mm 1.99 mm 1.99 mm 1.99 mm 1.99 mm
最大待机电流 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
最小待机电流 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
最大压摆率 0.28 mA 0.39 mA 0.39 mA 0.36 mA 0.36 mA 0.28 mA 0.28 mA 0.28 mA 0.36 mA 0.36 mA
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 15 mm 14 mm 14 mm 15 mm 15 mm 15 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 GSI Technology - - GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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