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HD10-G

Surface Mount Bridge Rectifier

器件类别:分立半导体    二极管   

厂商名称:Comchip Technology

厂商官网:http://www.comchiptech.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Comchip Technology
包装说明
R-PDSO-G4
Reach Compliance Code
compli
ECCN代码
EAR99
最小击穿电压
1000 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PDSO-G4
最大非重复峰值正向电流
30 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
1000 V
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Surface Mount Bridge Rectifier
HD01-G THRU HD10-G (RoHS Device)
Voltage Range 100 to 1000 V
Current 0.8 Ampere
Features
Plastic package has Underwriters
Laboratory Flammability Classification
94V-0
High surge current capability
Saves space on printed circuit boards
Glass passivated structure
Mechanical Data
Case: Molded plastic body over passivated
junctions
Terminals: Solderable per MIL-STD-750,
method 2026
Polarity: As marked on body
Mounting position: Any
Weight: 0.22 gram
MINI-DIP
C.02(.5)
-
~
.031(0.8)
.019(0.5)
+
~
.275(7) .165(4.2)
MAX .150(3.8)
.043(1.1)
.027(0.7)
.106(2.7)
.090(2.3)
.193(4.9)
.177(4.5)
.067(1.7)
.057(1.3)
.014(.35)
.006(.15)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.118(3.0)
MAX
.008(0.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=40
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 0.8 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Rating for fusing (t < 8.3ms)
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junctionand Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
HD01-G HD02-G
100
70
100
200
140
200
HD04-G
400
280
400
HD06-G HD08-G
600
420
600
800
560
800
HD10-G
1000
700
1000
UNIT
V
V
V
A
0.8
I
FSM
30
A
V
F
1.0
5.0
250
5
25
85
-55 to + 150
o
V
uA
uA
A
S
pF
C/W
o
2
I
R
It
C
J
R
JA
T
J
, T
STG
2
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(2) Thermal Resistance form junction to ambient mounted on P.C.B with 0.5 x 0.5"(13x13mm) copper pads.
1/2
Surface Mount Bridge Rectifier
HD01-G THRU HD10-G
RATINGS AND CHARACTERISTIC CURVES B1S-G THRU B10S-G
FIG.1 - FORWARD CURRENT DERATING CURVE
0.8
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
25
0.6
20
0.4
15
10
0.2
60 Hz Resistive or
Inductive load
0
0
50
100
o
5
0
150
1
10
100
AMBIEND TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
T
J
=125 C
10
o
1.0
1
T
J
=25 C
0.1
o
0.1
0.01
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
10
1
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
2/2
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参数对比
与HD10-G相近的元器件有:HD01-G。描述及对比如下:
型号 HD10-G HD01-G
描述 Surface Mount Bridge Rectifier Surface Mount Bridge Rectifier
是否Rohs认证 符合 符合
厂商名称 Comchip Technology Comchip Technology
包装说明 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code compli compli
ECCN代码 EAR99 EAR99
最小击穿电压 1000 V 100 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G4 R-PDSO-G4
最大非重复峰值正向电流 30 A 30 A
元件数量 4 4
相数 1 1
端子数量 4 4
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 0.8 A 0.8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 1000 V 100 V
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
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