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HER102

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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HER101-HER108
1.0AMP. High Efficient Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: Molded plastic DO-41
Epoxy: UL 94V0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Dimensions in inches and (millimeters)
Weight: 0.35 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current T
A
=25
o
C
o
at Rated DC Blocking Voltage T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
( Note 2 )
Symbol HER HER HER HER HER HER HER HER
Units
101 102 103 104 105 106 107 108
50 100 200 300 400 600 800 1000
V
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
35
50
70
140 210 280 420 560
700
V
V
A
A
100 200 300 400 600 800 1000
1.0
30
1.0
1.3
5.0
150
50
25
70
-65 to +150
-65 to +150
75
20
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
http://www.luguang.cn
mail:lge@luguang.cn
HER101-HER108
1.0AMP. High Efficient Rectifiers
RATINGS AND CHARACTERISTIC CURVES (HER101 THRU HER108)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.0
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
100
Tj=100
0
C
10
Tj=75
0
C
0
0
25
50
75
100
125
O
150
175
AMBIENT TEMPERATURE. ( C)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
40
Tj=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
35
30
25
20
15
0.1
0
8.3ms Single Half Sine Wave
JEDEC Method
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD CURRENT. (A)
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
HE
JUNCTION CAPACITANCE.(pF)
1
HER101-HER104
HE
0
R1
5
HE
R1
06
~H
ER
R1
20
01
0.1
~H
ER
10
10
5
8
HER106-HER108
10
0
0.1
0.5
1
2
5
10
20
50
100 200
500
1000
REVERSE VOLTAGE. (V)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
NON
INDUCTIVE
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
http://www.luguang.cn
mail:lge@luguang.cn
HER101-HER108
1.0AMP. High Efficient Rectifiers
MARKING INFORMATION
TAPING SPECIFICATIONS
0.8mm
MAX
5mm
HER10x
LGE
Cathode
HER10xG
x
LGE
= Polarity Band
= Device Number
= 1, 2, 3, 4, 5, 6, 7 or 8
= Manufacturer’s Logo
1.2mm
MAX
6mm
52.4mm
Cathode Tape: Red
Anode Tape: White
0.8mm
MAX
http://www.luguang.cn
mail:lge@luguang.cn
查看更多>
参数对比
与HER102相近的元器件有:HER101、HER103、HER104、HER105、HER106。描述及对比如下:
型号 HER102 HER101 HER103 HER104 HER105 HER106
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
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