首页 > 器件类别 > 半导体 > 分立半导体

HER106

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, 硅, 信号二极管, DO-41

器件类别:半导体    分立半导体   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

下载文档
器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
PLASTIC PACKAGE-2
状态
ACTIVE
包装形状
ROUND
包装尺寸
LONG FORM
端子形式
WIRE
端子涂层
TIN LEAD
端子位置
AXIAL
包装材料
PLASTIC/EPOXY
结构
SINGLE
壳体连接
ISOLATED
二极管元件材料
SILICON
二极管类型
SIGNAL DIODE
反向恢复时间最大
0.0750 us
最大重复峰值反向电压
600 V
最大平均正向电流
1 A
文档预览
HER101-HER108
1.0AMP. High Efficient Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: Molded plastic DO-41
Epoxy: UL 94V0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Dimensions in inches and (millimeters)
Weight: 0.35 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current T
A
=25
o
C
o
at Rated DC Blocking Voltage T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
( Note 2 )
Symbol HER HER HER HER HER HER HER HER
Units
101 102 103 104 105 106 107 108
50 100 200 300 400 600 800 1000
V
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
35
50
70
140 210 280 420 560
700
V
V
A
A
100 200 300 400 600 800 1000
1.0
30
1.0
1.3
5.0
150
50
25
70
-65 to +150
-65 to +150
75
20
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
http://www.luguang.cn
mail:lge@luguang.cn
HER101-HER108
1.0AMP. High Efficient Rectifiers
RATINGS AND CHARACTERISTIC CURVES (HER101 THRU HER108)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.0
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
100
Tj=100
0
C
10
Tj=75
0
C
0
0
25
50
75
100
125
O
150
175
AMBIENT TEMPERATURE. ( C)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
40
Tj=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
35
30
25
20
15
0.1
0
8.3ms Single Half Sine Wave
JEDEC Method
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD CURRENT. (A)
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
HE
JUNCTION CAPACITANCE.(pF)
1
HER101-HER104
HE
0
R1
5
HE
R1
06
~H
ER
R1
20
01
0.1
~H
ER
10
10
5
8
HER106-HER108
10
0
0.1
0.5
1
2
5
10
20
50
100 200
500
1000
REVERSE VOLTAGE. (V)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
NON
INDUCTIVE
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
http://www.luguang.cn
mail:lge@luguang.cn
HER101-HER108
1.0AMP. High Efficient Rectifiers
MARKING INFORMATION
TAPING SPECIFICATIONS
0.8mm
MAX
5mm
HER10x
LGE
Cathode
HER10xG
x
LGE
= Polarity Band
= Device Number
= 1, 2, 3, 4, 5, 6, 7 or 8
= Manufacturer’s Logo
1.2mm
MAX
6mm
52.4mm
Cathode Tape: Red
Anode Tape: White
0.8mm
MAX
http://www.luguang.cn
mail:lge@luguang.cn
查看更多>
参数对比
与HER106相近的元器件有:HER101、HER102、HER103、HER104、HER105。描述及对比如下:
型号 HER106 HER101 HER102 HER103 HER104 HER105
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
正弦脉宽调制(SPWM)波的基本要素
项目简介 江苏省常熟市 吴栋梁 ...
qqlb 电源技术
【平头哥RVB2601开发板试用体验】 GPIO输出测试
搭建好开发环境后,先来测试下开发板的GPIO输出。 一、硬件电路 使用开发板上...
TL-LED 玄铁RISC-V活动专区
Altium 16的polygon 异常问题
用AD16做了一个6层板,在电源层有较多的多边形敷铜(polygon),顶层和底层也有polygon...
ttgoer PCB设计
MTK6225 手机开发板(含源代码)
MTK6225 手机开发板(含源代码) 有诚意者请联系 Qq:296662705 硬件特性: 1、 ...
mymehis 嵌入式系统
SparkRoad测评(7)-FPGA串口测试
安路的开发板上是带有USB2UART模块的,这个模块是通过板子上的单片机与USB转串口相连接的,打...
bigbat 国产芯片交流
基本整流电路怎么提高功率因数?
整流分为基本二极管整流、晶闸管半控整流、可控管PWM全控整流,全控PWM整流能够实现功率因数的可控...
乱世煮酒论天下 电机驱动控制(Motor Control)
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消