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HER301G-HER308G

Technical Data

Data Sheet N1632, Rev. A

HER301G-HER308G

HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features



Low power loss, high efficiency

Low leakage

Low forward voltage drop

High current capability

High speed switching

High reliability

High current surge

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

DO-201AD

Circuit Diagram

Mechanical Data



Case: DO-201AD Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: MIL-STD-202E method 208C guaranteed

Mounting Position: Any

Weight: 1.02 gram

Maximum Ratings and Electrical Characteristics

=25°C unless otherwise specified

SYMBO

HER

301G

HER

302G

HER

303G

HER

304G

HER

305G

HER

306G

HER

307G

HER

308G

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified

current 0.375"( 9.5mm ) lead length at

=50℃

Peak forward surge current

8.3ms single half sine-wave

superimposed on rated load ( JEDEC

Method)

Maximum instantaneous forward voltage

at 3.0A

Maximum DC reverse current T

=25℃

at rated DC blocking voltage T

=100℃

Maximum reverse recovery time (Note 1)

Typical junction capacitance ( Note 2)

Typical thermal resistance ( Note 3)

Operating junction and storage

temperature range

RRM

RMS

(AV)

100

200

140

200

300

210

300

3.0

400

280

400

600

420

600

800

560

800

1000

700

1000

FSM

θJA

STG

1.0

150

1.30

5.0

150

-65 to +150

1.70

μA

℃/W

℃

Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A. Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm) lead length, P.C.B mounted.



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



HER301G-HER308G

Technical Data

Data Sheet N1632, Rev. A

Ratings and Characteristics Curves



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



HER301G-HER308G

Technical Data

Data Sheet N1632, Rev. A

Mechanical Dimensions DO-201AD

Millimeters

SYMBOL

Min.

25.4

8.50

1.2

5.0

Max.

9.50

1.3

5.6

Inches

Min.

1.000

0.335

0.048

0.197

Max.

0.374

0.052

0.220

Ordering Information

Device

HER301G

THRU

HER308G

Marking Diagram

Shipping

1250pcs / tape

Where XXXXX is YYWWL

HER301G

SSG

= Part Name

= SSG

= Year

= Week

= Lot Number

Package

DO-201AD

(Pb-Free)

For information on tape and reel specifications, including part

orientation and tape sizes, please refer to our tape and reel

packaging specification.

Carrier Tape Specification DO-201AD

SYMBOL

IL1-L2I

Millimeters

Min.

9.50

50.9

5.60

Max.

10.50

53.9

1.20

6.40

0.80

1.0



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



HER301G-HER308G

Technical Data

Data Sheet N1632, Rev. A

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales

department for the latest version of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement .

3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd

assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,

products or circuits described in the datasheets.

4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics

(Nanjing) Co., Ltd.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC

- Sangdest Microelectronics (Nanjing) Co., Ltd.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

regulations..



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



参数对比

与HER303G相近的元器件有：HER301G、HER306G、HER307G、HER304G、HER302G、HER305G、HER308G。描述及对比如下：

型号	HER303G	HER301G	HER306G	HER307G	HER304G	HER302G	HER305G	HER308G
描述	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,	Rectifier Diode,
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd	Sangdest Microelectronics (Nanjing) Co Ltd
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
其他特性	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1 V	1 V	1.7 V	1.7 V	1.3 V	1 V	1.3 V	1.7 V
JEDEC-95代码	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	150 A	150 A	150 A	150 A	150 A	150 A	150 A	150 A
元件数量	1	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大重复峰值反向电压	200 V	50 V	600 V	800 V	300 V	100 V	400 V	1000 V
最大反向电流	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
最大反向恢复时间	0.05 µs	0.05 µs	0.075 µs	0.075 µs	0.05 µs	0.05 µs	0.05 µs	0.075 µs
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED