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HER304G

Rectifier Diode,

器件类别：分立半导体    二极管   

厂商名称：Sangdest Microelectronics (Nanjing) Co Ltd

器件标准：

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器件：HER304G

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Sangdest Microelectronics (Nanjing) Co Ltd
Reach Compliance Code
compliant
其他特性
HIGH RELIABILITY, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度（摄氏度）
NOT SPECIFIED
最大重复峰值反向电压
300 V
最大反向电流
5 µA
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
HER301G-HER308G
Technical Data
Data Sheet N1632, Rev. A
HER301G-HER308G
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Features
Low power loss, high efficiency
Low leakage
Low forward voltage drop
High current capability
High speed switching
High reliability
High current surge
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DO-201AD
Circuit Diagram
Mechanical Data
Case: DO-201AD Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting Position: Any
Weight: 1.02 gram
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
SYMBO
LS
HER
301G
HER
302G
HER
303G
HER
304G
HER
305G
HER
306G
HER
307G
HER
308G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 0.375"( 9.5mm ) lead length at
T
A
=50℃
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load ( JEDEC
Method)
Maximum instantaneous forward voltage
at 3.0A
Maximum DC reverse current T
A
=25℃
at rated DC blocking voltage T
A
=100℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance ( Note 2)
Typical thermal resistance ( Note 3)
Operating junction and storage
temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J,
T
STG
50
70
1.0
150
1.30
5.0
150
75
50
20
-65 to +150
1.70
A
V
μA
ns
pF
℃/W
℃
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A. Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm) lead length, P.C.B mounted.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
HER301G-HER308G
Technical Data
Data Sheet N1632, Rev. A
Ratings and Characteristics Curves
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
HER301G-HER308G
Technical Data
Data Sheet N1632, Rev. A
Mechanical Dimensions DO-201AD
Millimeters
SYMBOL
A
B
C
D
Min.
25.4
8.50
1.2
5.0
Max.
-
9.50
1.3
5.6
Inches
Min.
1.000
0.335
0.048
0.197
Max.
-
0.374
0.052
0.220
Ordering Information
Device
HER301G
THRU
HER308G
Marking Diagram
Shipping
1250pcs / tape
Where XXXXX is YYWWL
HER301G
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Package
DO-201AD
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Carrier Tape Specification DO-201AD
SYMBOL
A
B
Z
T
E
IL1-L2I
Millimeters
Min.
9.50
50.9
-
5.60
-
-
Max.
10.50
53.9
1.20
6.40
0.80
1.0
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
HER301G-HER308G
Technical Data
Data Sheet N1632, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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参数对比
与HER304G相近的元器件有：HER301G、HER306G、HER307G、HER303G、HER302G、HER305G、HER308G。描述及对比如下：
型号 HER304G HER301G HER306G HER307G HER303G HER302G HER305G HER308G
描述 Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
其他特性 HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1 V 1.7 V 1.7 V 1 V 1 V 1.3 V 1.7 V
JEDEC-95代码 DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 300 V 50 V 600 V 800 V 200 V 100 V 400 V 1000 V
最大反向电流 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
最大反向恢复时间 0.05 µs 0.05 µs 0.075 µs 0.075 µs 0.05 µs 0.05 µs 0.05 µs 0.075 µs
表面贴装 NO NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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器件捷径:
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