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HGT1S3N60B3

Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:Harris

厂商官网:http://www.harris.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Harris
包装说明
IN-LINE, R-PSIP-T3
Reach Compliance Code
unknow
其他特性
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
外壳连接
COLLECTOR
最大集电极电流 (IC)
7 A
集电极-发射极最大电压
600 V
配置
SINGLE
门极发射器阈值电压最大值
6 V
门极-发射极最大电压
20 V
JEDEC-95代码
TO-262AA
JESD-30 代码
R-PSIP-T3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
33 W
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
MOTOR CONTROL
晶体管元件材料
SILICON
标称断开时间 (toff)
220 ns
标称接通时间 (ton)
16 ns
参数对比
与HGT1S3N60B3相近的元器件有:HGTP3N60B3、HGT1S3N60B3S9A、HGTD3N60B3S9A、HGT1S3N60B3S。描述及对比如下:
型号 HGT1S3N60B3 HGTP3N60B3 HGT1S3N60B3S9A HGTD3N60B3S9A HGT1S3N60B3S
描述 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC PACKAGE-4 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-4
厂商名称 Harris Harris Harris Harris Harris
包装说明 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknown unknown unknown unknow
其他特性 LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 7 A 7 A 7 A 7 A 7 A
集电极-发射极最大电压 600 V 600 V 600 V 600 V 600 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
JEDEC-95代码 TO-262AA TO-220AB TO-263AB TO-252AA TO-263AB
JESD-30 代码 R-PSIP-T3 R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1
端子数量 3 3 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO YES YES YES
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称断开时间 (toff) 220 ns 220 ns 220 ns 220 ns 220 ns
标称接通时间 (ton) 16 ns 16 ns 16 ns 16 ns 16 ns
是否Rohs认证 不符合 不符合 - - 不符合
门极发射器阈值电压最大值 6 V 6 V - - 6 V
门极-发射极最大电压 20 V 20 V - - 20 V
JESD-609代码 e0 e0 - - e0
最高工作温度 150 °C 150 °C - - 150 °C
最大功率耗散 (Abs) 33 W 33 W - - 33 W
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb)
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