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HIP6602BCB-T

0.73A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14, PLASTIC, MS-012AB, SOIC-14

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
PLASTIC, MS-012AB, SOIC-14
针数
14
Reach Compliance Code
unknow
高边驱动器
YES
接口集成电路类型
HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码
R-PDSO-G14
JESD-609代码
e0
长度
8.65 mm
湿度敏感等级
1
功能数量
2
端子数量
14
最高工作温度
85 °C
最低工作温度
标称输出峰值电流
0.73 A
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
认证状态
COMMERCIAL
座面最大高度
1.75 mm
最大供电电压
13.2 V
最小供电电压
10.8 V
标称供电电压
12 V
电源电压1-最大
12 V
电源电压1-分钟
5 V
表面贴装
YES
温度等级
OTHER
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3.9 mm
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L6613A
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12A, IS
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ISL661
ISL661
®
HIP6602B
July 22, 2005
FN9076.5
Dual Channel Synchronous Rectified
Buck MOSFET Driver
The HIP6602B is a high frequency, two power channel
MOSFET driver specifically designed to drive four power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. This device is available in either a
14-lead SOIC or a 16-lead QFN package with a PAD to
thermally enhance the package. These drivers combined
with a HIP63xx or ISL65xx series of Multi-Phase Buck PWM
controllers and MOSFETs form a complete core voltage
regulator solution for advanced microprocessors.
The HIP6602B drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage flexibility provides the
advantage of optimizing applications involving trade-offs
between switching losses and conduction losses.
The output drivers in the HIP6602B have the capacity to
efficiently switch power MOSFETs at high frequencies. Each
driver is capable of driving a 3000pF load with a 30ns
propagation delay and 50ns transition time. This device
implements bootstrapping on the upper gates with a single
external capacitor and resistor required for each power
channel. This reduces implementation complexity and allows
the use of higher performance, cost effective, N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
Features
• Drives Four N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Devices
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 14-Lead SOIC Package
• Smaller 16-Lead QFN Thermally Enhanced Package
• 5V to 12V Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Undervoltage Protection
• Pb-Free Plus Anneal Available (RoHS Compliant)
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
Applications
• Core Voltage Supplies for Intel Pentium® III and AMD®
Athlon
TM
Microprocessors.
Ordering Information
PART NUMBER
HIP6602BCB
HIP6602BCB-T
HIP6602BCBZ (Note 1)
HIP6602BCBZ-T (Note 1)
HIP6602BCR
HIP6602BCR-T
HIP6602BCRZ (Note 1)
HIP6602BCRZ-T (Note 1)
HIP6602BCRZA (Note 1)
TEMP.
RANGE (°C)
0 to 85
PACKAGE
14 Ld SOIC
PKG.
DWG. #
M14.15
• High-Frequency, Low-Profile DC/DC Converters
• High-Current, Low-Voltage DC/DC Converters
14 Ld SOIC Tape and Reel
0 to 85
14 Ld SOIC
(Pb-Free)
M14.15
14 Ld SOIC Tape and Reel (Pb-Free)
0 to 85
16 Ld 5x5 QFN
L16.5x5
16 Ld 5x5 QFN Tape and Reel
0 to 85
16 Ld 5x5 QFN
(Pb-Free)
L16.5x5
16 Ld 5x5 QFN Tape and Reel (Pb-Free)
0 to 85
16 Ld 5x5 QFN
(Pb-Free)
L16.5x5
HIP6602BCRZA-T (Note 1) 16 Ld 5x5 QFN Tape and Reel (Pb-Free)
NOTE:
1. Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002-2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
1
HIP6602B
Pinouts
HIP6602B (SOIC)
TOP VIEW
PWM1
PWM2
GND
LGATE1
PVCC
PGND
LGATE2
1
2
3
4
5
6
7
14 VCC
13 PHASE1
12 UGATE1
11 BOOT1
10 BOOT2
9 UGATE2
8 PHASE2
GND 1
LG1 2
PVCC 3
PGND 4
5
NC
6
LG2
7
PHASE2
8
NC
HIP6602 (16 LD QFN)
TOP VIEW
PHASE1
13
12 UG1
11 BOOT1
10 BOOT2
9
UG2
PWM2
PWM1
15
16
Block Diagram
PVCC
BOOT1
UGATE1
VCC
+5V
SHOOT-
THROUGH
PROTECTION
PHASE1
10K
PWM1
PVCC
10K
LGATE1
PGND
+5V
CONTROL
LOGIC
PVCC
PGND
BOOT2
UGATE2
10K
PWM2
10K
GND
SHOOT-
THROUGH
PROTECTION
PHASE2
PVCC
HIP6602B
PGND
PAD
LGATE2
For HIP6602BCR, the PAD on the bottom side of the
package MUST be soldered to the PC board
2
VCC
14
FN9076.5
July 22, 2005
HIP6602B
Typical Application - 2 Channel Converter Using a HIP6302 and a HIP6602B Gate Driver
+5V
+12V
BOOT1
+12V
FB
VSEN
COMP
VCC
V
CC
ISEN1
UGATE1
PHASE1
PGOOD
PWM1
MAIN
CONTROL
HIP6302
PWM1
DUAL
DRIVER
HIP6602B
LGATE1
+V
CORE
+5V/12V
BOOT2
+12V
PVCC
VID
PWM2
ISEN2
PWM2
UGATE2
PHASE2
LGATE2
FS/DIS
GND
GND
PGND
3
FN9076.5
July 22, 2005
HIP6602B
Typical Application - 4 Channel Converter Using a HIP6303 and HIP6602B Gate Driver
+12V
BOOT1
+12V
UGATE1
VCC
PHASE1
LGATE1
+5V
DUAL
DRIVER
HIP6602B
FB
VSEN
COMP
V
CC
UGATE2
ISEN1
PGOOD
EN
PWM1
PWM2
MAIN ISEN2
CONTROL
HIP6303
PWM1
PWM2
LGATE2
PHASE2
PVCC
+5V/12V
BOOT2
+12V
GND
PGND
VID
+V
CORE
ISEN3
FS/DIS
PWM3
PWM4
GND
ISEN4
UGATE3
VCC
PHASE3
+12V
BOOT3
+12V
LGATE3
DUAL
DRIVER
HIP6602B
PVCC
+5V/12V
BOOT4
+12V
UGATE4
PWM3
PWM4
LGATE4
PHASE4
GND
PGND
4
FN9076.5
July 22, 2005
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参数对比
与HIP6602BCB-T相近的元器件有:HIP6602BCB、HIP6602BCBZ。描述及对比如下:
型号 HIP6602BCB-T HIP6602BCB HIP6602BCBZ
描述 0.73A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14, PLASTIC, MS-012AB, SOIC-14 0.73A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14, PLASTIC, MS-012AB, SOIC-14 0.73 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14
是否无铅 含铅 含铅 不含铅
零件包装代码 SOIC SOIC SOIC
包装说明 PLASTIC, MS-012AB, SOIC-14 PLASTIC, MS-012AB, SOIC-14 SOP,
针数 14 14 14
Reach Compliance Code unknow unknown unknown
高边驱动器 YES YES YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G14 R-PDSO-G14 R-PDSO-G14
JESD-609代码 e0 e0 e3
长度 8.65 mm 8.65 mm 8.65 mm
湿度敏感等级 1 1 3
功能数量 2 2 2
端子数量 14 14 14
最高工作温度 85 °C 85 °C 85 °C
标称输出峰值电流 0.73 A 0.73 A 0.73 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 240 240 260
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL
座面最大高度 1.75 mm 1.75 mm 1.75 mm
最大供电电压 13.2 V 13.2 V 13.2 V
最小供电电压 10.8 V 10.8 V 10.8 V
标称供电电压 12 V 12 V 12 V
电源电压1-最大 12 V 12 V 12 V
电源电压1-分钟 5 V 5 V 5 V
表面贴装 YES YES YES
温度等级 OTHER OTHER OTHER
端子面层 TIN LEAD TIN LEAD MATTE TIN
端子形式 GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30
宽度 3.9 mm 3.9 mm 3.9 mm
厂商名称 Rochester Electronics - Rochester Electronics
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