1M
×
64-Bit Dynamic RAM Module
HYM 641010GS-60/-70
HYM 641020GS-60/-70
Advanced Information
•
•
1 048 576 words by 64-bit organization
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 9680 mW active (-60 version)
max. 8800 mW active (-70 version)
CMOS – 451 mW standby
TTL
– 550 mW standby
•
•
•
•
•
•
•
•
•
•
•
CAS-before-RAS refresh, RAS-only-refresh
Byte Write Capability
16 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs except RAS and DQ
168 pin, dual read-out, Single in-Line Memory Module
Utilizes sixteen 1M
×
4 -DRAMs (HYB 514400BJ/BT) and
four BiCMOS 8-bit buffers/line drivers 74ABT244
Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness)
HYM 641020GS with TSOPII-components (4.06 mm module thickness)
1024 refresh cycles / 16 ms
Optimized for use in byte-write non-parity applications
Gold contact pads,double sided module with 25.35 mm (1000 mil) height
•
•
•
•
Semiconductor Group
1
12.95
HYM 641010/20GS-60/-70
1M x 64 Module
The HYM 641010/20GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 64-
bit in a 168-pin, dual read-out, single-in-line package comprising sixteen HYB 514400BJ/BT 1M
×
4 DRAMs in 300 mil wide SOJ or TSOPII - packages mounted together with sixteen 0.2
µF
ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
four BiCMOS 8-bit buffers/line drivers.
Each HYB 514400BJ/BT is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Type
HYM 641020GS-60
HYM 641020GS-70
HYM 641010GS-60
HYM 641010GS-70
Pin Names
A0-A9,B0
DQ0 - DQ63
RAS0, RAS2
CAS0 - CAS7
WE0, WE2
OE0, OE2
Vcc
Vss
PD1 - PD8
PDE
ID0 , ID1
N.C.
Presence-Detect and ID-pin Truth Table:
Module
HYM 641010/20GS-60
HYM 641010/20GS-70
ID0
Vss
Vss
ID1
Vss
Vss
PD1
0
0
PD2
0
0
PD3
1
1
PD4
0
0
PD5
0
0
PD6
1
0
PD7
1
1
PD8
1
1
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Output Enable
Power (+5 Volt)
Ground
Presence Detect Pins
Presence Detect Enable
ID indentification bit
No Connection
Ordering Code
Q67100 - Q2003
on request
Q67100 - Q2002
on request
Package
L-DIM-168-1
L-DIM-168-1
L-DIM-168-1
L-DIM-168-1
Descriptions
60 ns DRAM module
70 ns DRAM module
60 ns DRAM module
70 ns DRAM module
Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) . For PDE at a high level
all PD terminals are in tri-state.
Semiconductor Group
2
HYM 641010/20GS-60/-70
1M x 64 Module
Pin Configuration
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Symbol
VSS
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
VSS
DQ8
DQ9
DQ10
DQ11
DQ12
VCC
DQ13
DQ14
DQ15
NC
VSS
NC
NC
VCC
WE0
CAS0
CAS2
RAS0
OE0
VSS
A0
A2
A4
A6
A8
NC
NC
VCC
NC
NC
PIN #
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Symbol
VSS
OE2
RAS2
CAS4
CAS6
WE2
VCC
NC
NC
DQ16
DQ17
VSS
DQ18
DQ19
DQ20
DQ21
VCC
DQ22
NC
NC
NC
NC
DQ23
NC
DQ24
VSS
DQ25
DQ26
DQ27
DQ28
VCC
DQ29
DQ30
DQ31
NC
VSS
PD1
PD3
PD5
PD7
ID0
VCC
PIN #
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
Symbol
VSS
DQ32
DQ33
DQ34
DQ35
VCC
DQ36
DQ37
DQ38
DQ39
NC
VSS
DQ40
DQ41
DQ42
DQ43
DQ44
VCC
DQ45
DQ46
DQ47
NC
VSS
NC
NC
VCC
NC
CAS1
CAS3
NC
NC
VSS
A1
A3
A5
A7
A9
NC
NC
VCC
NC
B0
PIN #
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
VSS
NC
NC
CAS5
CAS7
PDE
VCC
NC
NC
DQ48
DQ49
VSS
DQ50
DQ51
DQ52
DQ53
VCC
DQ54
NC
NC
NC
NC
DQ55
NC
DQ55
VSS
DQ57
DQ58
DQ59
DQ60
VCC
DQ61
DQ62
DQ63
NC
VSS
PD2
PD4
PD6
PD8
ID1
VCC
Semiconductor Group
3
HYM 641010/20GS-60/-70
1M x 64 Module
RAS0
WE0
OE0
CAS0
RAS2
WE2
OE2
CAS4
DQ0-DQ3
I/O1-I/O4
D0
DQ32-DQ35
I/O1-I/O4
D8
DQ4-DQ7
CAS1
DQ8-DQ11
I/O1-I/O4
D1
DQ36-DQ39
I/O1-I/O4
D9
CAS5
I/O1-I/O4
D2
DQ40-DQ43
I/O1-I/O4
D10
DQ12-DQ15
I/O1-I/O4
D3
DQ44-DQ47
I/O1-I/O4
D11
CAS2
DQ16-DQ19
I/O1-I/O4
D4
CAS6
DQ48-DQ51
I/O1-I/O4
D12
DQ20-DQ23
I/O1-I/O4
D5
DQ52-DQ55
I/O1-I/O4
D13
CAS3
DQ24-DQ27
I/O1-I/O4
D6
CAS7
DQ56-DQ59
I/O1-I/O4
D14
DQ28-DQ31
I/O1-I/O4
D7
DQ60-DQ63
I/O1-I/O4
D15
A0
B0
A1-A9
D0 - D7
D8 - D15
D0 - D17
Vcc
Vss
D0-D15, buffers
Block Diagram
Semiconductor Group
4
HYM 641010/20GS-60/-70
1M x 64 Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,32 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
min.
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
max.
5.5
0.8
–
0.4
10
10
V
V
V
V
µA
µA
Unit
Test
Condition
–
–
–
–
–
–
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
2.4
– 1.0
2.4
–
– 10
– 10
Average
V
CC
supply current:
I
CC1
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
–
–
1760
1600
mA
mA
2), 3)
I
CC2
–
50
mA
–
Average
V
CC
supply current during RAS
I
CC3
only refresh cycles:
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
2)
–
–
1760
1600
mA
mA
Semiconductor Group
5
