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参数对比

与IDT71T65812S200BG相近的元器件有：IDT71T65612S200BQ、IDT71T65612S200BG、IDT71T65812S166BG、IDT71T65812S166BQ、IDT71T65612S166BG、IDT71T65612S166BQ、IDT71T65812S200BQ、IDT71T65612S200PF、IDT71T65612S166PF。描述及对比如下：

型号	IDT71T65812S200BG	IDT71T65612S200BQ	IDT71T65612S200BG	IDT71T65812S166BG	IDT71T65812S166BQ	IDT71T65612S166BG	IDT71T65612S166BQ	IDT71T65812S200BQ	IDT71T65612S200PF	IDT71T65612S166PF
描述	ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	QFP	QFP
包装说明	BGA,	TBGA,	BGA,	BGA,	TBGA,	BGA,	TBGA,	TBGA,	LQFP,	LQFP,
针数	119	165	119	119	165	119	165	165	100	100
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.2 ns	3.2 ns	3.2 ns	3.5 ns	3.5 ns	3.5 ns	3.5 ns	3.2 ns	3.2 ns	3.5 ns
JESD-30 代码	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165	R-PQFP-G100	R-PQFP-G100
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	22 mm	15 mm	22 mm	22 mm	15 mm	22 mm	15 mm	15 mm	20 mm	20 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	18	36	36	18	18	36	36	18	36	36
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	119	165	119	119	165	119	165	165	100	100
字数	524288 words	262144 words	262144 words	524288 words	524288 words	262144 words	262144 words	524288 words	262144 words	262144 words
字数代码	512000	256000	256000	512000	512000	256000	256000	512000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	512KX18	256KX36	256KX36	512KX18	512KX18	256KX36	256KX36	512KX18	256KX36	256KX36
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	TBGA	BGA	BGA	TBGA	BGA	TBGA	TBGA	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	225	240	240
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.36 mm	1.2 mm	2.36 mm	2.36 mm	1.2 mm	2.36 mm	1.2 mm	1.2 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	GULL WING	GULL WING
端子节距	1.27 mm	1 mm	1.27 mm	1.27 mm	1 mm	1.27 mm	1 mm	1 mm	0.65 mm	0.65 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20	20	20
宽度	14 mm	13 mm	14 mm	14 mm	13 mm	14 mm	13 mm	13 mm	14 mm	14 mm