SRAM Module, 256KX32, 20ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64
厂商名称:IDT (Integrated Device Technology)
下载文档型号 | IDT7M4077S20C | IDT7M4077S17C | IDT7M4077S17CB | IDT7M4077S20CB | IDT7M4077S15C | IDT7M4077S15CB |
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描述 | SRAM Module, 256KX32, 20ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 | SRAM Module, 256KX32, 17ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 | SRAM Module, 256KX32, 17ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 | SRAM Module, 256KX32, 20ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 | SRAM Module, 256KX32, 15ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 | SRAM Module, 256KX32, 15ns, CDIP64, 3.500 X 0.600, 0.310 INCH HEIGHT, SIDE BRAZED, CERAMIC, DIP-64 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
针数 | 64 | 64 | 64 | 64 | 64 | 64 |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A001.A.2.C | 3A001.A.2.C | 3A991.B.2.A | 3A001.A.2.C |
最长访问时间 | 20 ns | 17 ns | 17 ns | 20 ns | 15 ns | 15 ns |
其他特性 | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS | TTL COMPATIBLE INPUTS/OUTPUTS |
JESD-30 代码 | R-CDIP-T64 | R-CDIP-T64 | R-CDIP-T64 | R-CDIP-T64 | R-CDIP-T64 | R-CDIP-T64 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 89.408 mm | 89.408 mm | 89.408 mm | 89.408 mm | 89.408 mm | 89.408 mm |
内存密度 | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 64 | 64 | 64 | 64 | 64 | 64 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C |
组织 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 8.509 mm | 8.509 mm | 8.509 mm | 8.509 mm | 8.509 mm | 8.509 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 |
宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
厂商名称 | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |