IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
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2 Power-Transistor
Features
R ( 492 ??6= ?@ C == 6=
>2 6G
R I46=6?E E 492 C IR
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AC 5F4E ) '
= 82 6
86
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!
R/ 6C = H @ ? C :D 2 ?46
R
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6D E
R
U @ A6C E E
2 :?8 6>A6C E 6
2 FC
R * 3 766 = 5 A= E , @ # - 4@ >A= ?E
C 62
2 :?8
:2
R + F2 = :65 2 44@ C
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™
Product Summary
V
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R$562 =7 C
@ 9:89 76BF6?4J D 49:?8 2 ?5 D
C
H:E
J?49C ?@ FD C :7 E ?
@
64E:42 :@
R# 2 = 86? 766 2 44@ C
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C
5:?8 E $
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Type
Package
Marking
F>%JE*.+%+
(-)D<0D
F>%JE*.*%+
(-9D<0D
F>%JE**(%+
(-,D<0D
Maximum ratings,
2 E
W
U F?= D @ E H:D D
T
6D 96C 6 A64:7
:65
Parameter
@ ?E FD 5C :? 4FC6?E
:?F@
2
C
Symbol Conditions
I
;
T
9
U
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Value
)((
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0*.
Unit
7
T
9
* F= 65 5C :? 4FC6?E
D
2
C
+#
G = ?496 6?6C D 6 AF= 6
2 2
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U
ZA
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6C6
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,#
6 @ 46 @ E
* @ H6C D E ?
5:D :A2 :@
) A6C E 2 ?5 D @ C 86 E
2 :?8
E2
6>A6C E 6
2 FC
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A2 86
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
.96C =C :D 2 ?46 ; :@ ? 42 D
>2 6D E
F?4E
6
.96C =C :D 2 ?46
>2 6D E
; :@ ? 2 >3 :6?E
F?4E
R
aUA9
R
aUA7
>:?:>2 =7 @ E :?E
@ AC
4>
*
4@ @ = 2 C
-#
:?8 62
%
%
%
%
(&-
,(
B'L
Electrical characteristics,
2 E
W
U F?= D @ E H:D D
T
6D 96C 6 A64:7
:65
Static characteristics
C :? D FC 3 C <5@ H? G =2 86
2
@ 46 62
@ E
" 2 E E 6D = G =2 86
6 9C 9@ 5 @ E
16C 82 E G =2 86 5C :? 4FC6?E
@
6 @ E
2
C
V
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W
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6 D 46 62
C
C :? D FC @ ? D 2 E C :D 2 ?46
2
@ 46
E 6 6D E
I
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FC6?E = 65 3 J 3 @ ?5H:C H:E 2 ?R
aUA9
& 0 E 49:A :D 2 3 = E 42 CJ
C :D :>:E
6
9
96
6 @
C
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A2 86
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
$?AFE A2 4:E ?46
42
2
) FE 42 A2 4:E ?46
AFE
2
, 6G D E2 ?D 6C A2 4:E ?46
6C6 C 7 42
2
.FC ? 56= J E
? @
2 :>6
, :D E
6 :>6
.FC 7 56= J E
? @ 7 2 :>6
! =E
2 = :>6
" 2 E 92 C 92 C 4E :D :4D
.#
6
T6
2 6C E
" 2 E E D FC 492 C
6 @ @ 46
86
" 2 E E 5C :? 492 C
6 @ 2
86
- H:E
49:?8 492 C
86
" 2 E 492 C E E =
6
86 @ 2
" 2 E A= E F G =2 86
6 2 62
@ E
) FE 492 C
AFE
86
Reverse Diode
:@ 56 4@ ?E FD 7 C C 4FC6?E
:?@
@ H2 5
C
:@ 56 AF= 6 4FC6?E
D
C
:@ 56 7 C C G =2 86
@ H2 5 @ E
, 6G D C G J E
6C6 64@ 6C :>6
, 6G D C G J 492 C
6C6 64@ 6C
86
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86
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A2 86
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
1 Power dissipation
P
a\a
5S"T
9
#
2 Drain current
I
;
5S"T
9
V
>I
"
350
120
300
100
250
80
P
tot
[W]
200
I
D
[A]
150
100
50
0
0
50
100
150
200
60
40
20
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
;
5S"V
;I
T
9
U
D
5(
A2 C >6E
t
]
2
6C
1000
WD
4 Max. transient thermal impedance
Z
aUA9
5S"t
]
#
A2 C >6E
D
5t
]
'T
2
6C
10
0
(&-
>D
(&*
(&)
(&(-
(&(*
(&()
100
10
-1
I
D
[A]
;9
Z
thJC
[K/W]
10
10
-2
D 6 AF= 6
:?8=
D
1
0.1
1
10
100
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
, 6G
A2 86
IPB051NE8N G
IPI05CNE8N G
IPP054NE8N G
5 Typ. output characteristics
I
;
5S"V
;I
T
W
U
A2 C >6E
V
>I
2
6C
400
/
/
/
6 Typ. drain-source on resistance
R
;I"\[#
5S"I
;
T
W
U
A2 C >6E
V
>I
2
6C
15
320
12
/
240
R
DS(on)
[m ]
/
9
/
/
I
D
[A]
160
/
6
/
80
/
3
/
0
0
1
2
3
4
5
0
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
;
5S"V
>I
L
;I
h6*hI
;
hR
;I"\[#ZNe
V
A2 C >6E
T
W
2
6C
300
8 Typ. forward transconductance
g
S`
5S"I
;
T
W
U
200
250
160
200
120
150
g
fs
[S]
80
U
U
I
D
[A]
100
50
40
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
, 6G
A2 86
