型号
- 型号
- 关键词
| 型号 | IPD65R660CFDAT | IPD65R660CFD | IPA65R660CFDXKSA2 | IPD65R660CFDBT |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor | Voltage References Ultra-High-Precision Ultra-Low-Noise | Power Field-Effect Transistor, TO-220FP, 3 PIN | Power Field-Effect Transistor |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | , | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant | not_compliant | compliant | compliant |
| 是否Rohs认证 | 符合 | 符合 | - | 符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | - | Infineon(英飞凌) |
| 雪崩能效等级（Eas） | 115 mJ | 115 mJ | - | 115 mJ |
| 外壳连接 | DRAIN | DRAIN | - | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 650 V | 650 V | - | 650 V |
| 最大漏极电流 (Abs) (ID) | 6 A | 6 A | - | 6 A |
| 最大漏极电流 (ID) | 6 A | 6 A | - | 6 A |
| 最大漏源导通电阻 | 0.66 Ω | 0.66 Ω | - | 0.66 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 | TO-252 | - | TO-252 |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | - | R-PSSO-G2 |
| 元件数量 | 1 | 1 | - | 1 |
| 端子数量 | 2 | 2 | - | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C |
| 最低工作温度 | -55 °C | -55 °C | - | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 17 A | 17 A | - | 17 A |
| 表面贴装 | YES | YES | - | YES |
| 端子形式 | GULL WING | GULL WING | - | GULL WING |
| 端子位置 | SINGLE | SINGLE | - | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON |
