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IRF130SMD05DSG-JQR-B

11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SEMELAB

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器件参数
参数名称
属性值
厂商名称
SEMELAB
零件包装代码
TO-276AA
包装说明
CHIP CARRIER, R-CBCC-N3
针数
5
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
100 V
最大漏极电流 (ID)
11 A
最大漏源导通电阻
0.22 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-276AA
JESD-30 代码
R-CBCC-N3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
44 A
认证状态
Not Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
BOTTOM
晶体管元件材料
SILICON
文档预览
IRF130SMD05N
IRFN130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7 .5 4 (0 .2 9 6 )
0 .7 6 (0 .0 3 0 )
m in .
2 .4 1 (0 .0 9 5 )
2 .4 1 (0 .0 9 5 )
0 .1 2 7 (0 .0 0 5 )
3 .1 7 5 (0 .1 2 5 )
M a x .
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
3 .0 5 (0 .1 2 0 )

!
5 .7 2 (.2 2 5 )
100V
11A
0.19
W
0 .7 6
(0 .0 3 0 )
m in .
0 .1 2 7 (0 .0 0 5 )
1 6 P L C S
0 .5 0 (0 .0 2 0 )
7 .2 6 (0 .2 8 6 )
0 .1 2 7 (0 .0 0 5 )
1 0 .1 6 (0 .4 0 0 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
SMD 05
IRF130SMD05
PAD1 = GATE
PAD 2 DRAIN
PAD3 = SOURCE
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
IRFN130SMD05
PAD1 = SOURCE
PAD 2 = DRAIN
PAD3 = GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
q
JC
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 10/00
IRF130SMD05N
IRFN130SMD05
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 11A
R
G
= 7.5
W
I
D
= 11A
I
D
= 7A
I
D
= 11A
I
D
= 250
m
A
I
DS
= 7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
100
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.1
0.19
0.22
2
3
25
250
100
-100
650
240
44
12.8
1.0
3.8
28.5
6.3
16.6
30
75
40
45
11
43
4
V / °C
W
V
)
W
(
S(
W
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
m
A
nA
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
I
S
= 11A
V
GS
= 0
I
S
= 11A
T
J
= 25°C
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
(from 6mm down drain lead pad to centre of die)
A
V
ns
T
J
= 25°C
1.5
300
3
8.7
8.7
m
C
nH
(from 6mm down source lead to centre of source bond pad)
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 10/00
HIGH
RELIABILITY
and
SCREENING
OPTIONS
Contents
1. Introduction................................................................................................ 1
2. Quality Approvals ...................................................................................... 2
3. Material Qualification................................................................................. 3
3.1 Header/Cap/Wire Approval Procedures ..................................................................... 3
3.2 Die Approval Procedure .............................................................................................. 4
4. CECC (Discrete Products)......................................................................... 5
4.1 Inspection Levels for CECC Fully Assessed Devices .............................................. 5
4.2 CECC Screening Options ............................................................................................ 7
5. BS (Linear Products) ................................................................................. 8
5.1 Inspection Levels for BS Fully Assessed Devices ................................................... 8
5.2 BS Screening Options (Linear IC’s) ......................................................................... 10
6. DSCC / 883B (Linear Products)................................................................11
6.1 Inspection Levels for DSCC SMD listed Devices .................................................... 11
6.2 Screening Sequence for DSCC SMD listed devices ............................................... 13
7. ESA - ESCC - Space Level Products ...................................................... 14
7.1 Chart F2 - Production Control.................................................................................. 14
7.2 Chart F3 - Screening Tests....................................................................................... 15
7.3 Chart F4 - Qualification and Periodic Tests........................................................... 16
8. Semelab In-House Processing Options ................................................. 17
8.1 CECC processed devices (QR208, QR209) ............................................................. 17
8.2 BS and CV processed devices (Bipolar).................................................................. 18
8.3 MIL-PRF-19500 Processed Discrete Semiconductors (QR205, QR204) ............... 19
8.3.1 QR205 - Inspection levels: ‘Mil Processed’ Quality Conformance ....... 20
8.3.2 QR204 - Screening Sequences ‘Mil Processed’ Components............... 22
8.4 Space Level Processed Discrete Semiconductors (QR216, QR217) .................... 23
8.4.1 QR217 - Inspection levels: ‘Space Level Processed’ Conformance..... 24
8.4.2 QR216 - Screening: Space Level Processed’ Components................... 25
8.4.3 Comparison of space level die lot approval ............................................ 27
8.5 MIL-883B Processed Integrated Circuits (QR214, QR215)..................................... 28
8.6 Customer Specifications ........................................................................................... 28
8.7 Data Sheets ................................................................................................................. 28
9. Comparison of Screening Options......................................................... 29
9.1 Comparison Hi-Rel Screening options .................................................................... 30
9.2 Comparison of Space Level Screening Options ..................................................... 30
Issue 10b (DMD) 04/06
DOC 2624 ISS 5
1. Introduction
Experience and Innovation In Semiconductor Technology
At SEMELAB, we research, design, manufacture and distribute an innovative range of
semiconductor products throughout the world.
Our R&D teams have an excellent track record for developing imaginative electronic
solutions. Our design engineers have created a wealth of high performance products. Our
manufacturing divisions have ensured supreme quality and reliability. And our sales teams
and distribution partners have opened international markets to some of the best electronics
solutions available.
We hold all the necessary Qualification Approvals needed to serve the Military and Hi-Rel
Industries now including
QML
Approval for a series of
Linear Integrated Circuits
and
QML
Approval for our laboratory test house capabilities. The test facilities are available to qualify
and screen third party products, including Hybrid products not made by the Group. We have
the ability and considerable experience of most test methods currently demanded.
We specialise in the fabrication of very high quality products especially intended for use in
high reliability applications. We have supplied many millions of discrete and linear integrated
circuits into all forms of high reliability equipment such as:
Space
Satellite Vehicles
Launchers
Support & defence
Military
Civil
Air Traffic Control
Secure Communication Links
Military links
Naval Links
Broadcast Transmitters
Underwater Repeaters
Guided weapons
Electronic Counter Measures
Command & Control
Radar
Railway Signalling Systems
Traction Systems
Automatic Signalling Systems
Oil Rig Installations
Drill Head Sensors
Atomic Event Detectors
Aircraft
Communications
Defence
Transportation
Harsh Environment
--- everywhere when there is a need for cost effective ultra reliable products.
This is SEMELAB: design innovation, backed by numerous approvals and manufacturing
strength and
led by a total commitment to quality
.
1
DOC 2624 ISS 5
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参数对比
与IRF130SMD05DSG-JQR-B相近的元器件有:。描述及对比如下:
型号 IRF130SMD05DSG-JQR-B
描述 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN
厂商名称 SEMELAB
零件包装代码 TO-276AA
包装说明 CHIP CARRIER, R-CBCC-N3
针数 5
Reach Compliance Code unknown
ECCN代码 EAR99
外壳连接 ISOLATED
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V
最大漏极电流 (ID) 11 A
最大漏源导通电阻 0.22 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-276AA
JESD-30 代码 R-CBCC-N3
元件数量 1
端子数量 3
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR
封装形式 CHIP CARRIER
极性/信道类型 N-CHANNEL
最大脉冲漏极电流 (IDM) 44 A
认证状态 Not Qualified
表面贴装 YES
端子形式 NO LEAD
端子位置 BOTTOM
晶体管元件材料 SILICON
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