型号
- 型号
- 关键词
| 型号 | IRF252 | IRF250R | IRF253R | IRF251 | IRF251R |
|---|---|---|---|---|---|
| 描述 | 25A, 200V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 包装说明 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 150 V | 150 V | 150 V |
| 最大漏极电流 (Abs) (ID) | 25 A | 30 A | 25 A | 30 A | 30 A |
| 最大漏极电流 (ID) | 25 A | 30 A | 25 A | 30 A | 30 A |
| 最大漏源导通电阻 | 0.12 Ω | 0.085 Ω | 0.12 Ω | 0.085 Ω | 0.085 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-204AE | TO-204AE | TO-204AE | TO-204AE | TO-204AE |
| JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 150 W | 150 W | 150 W | 150 W | 150 W |
| 最大功率耗散 (Abs) | 150 W | 150 W | 150 W | 150 W | 150 W |
| 最大脉冲漏极电流 (IDM) | 100 A | 120 A | 100 A | 120 A | 120 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大关闭时间（toff） | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns |
| 最大开启时间（吨） | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns |
| 雪崩能效等级（Eas） | - | 910 mJ | 910 mJ | - | 910 mJ |
