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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

ELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

IRF322, IRF323

Description

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,

N-Channel Power MOSFETs

Features

•

2.8A and 3.3A, 350V and 400V

DS(ON) = 1.8iiand2.5ii

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

ters, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Symbol

Ordering Information

PART NUMBER

IRF320

IRF321

IRF322

IRF323

PACKAGE

TO-204AA

BRAND

IRF320

IRF321

IRF322

IRF323

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

Absolute Maximum Ratings

= 25°c, Unless Othe

rwise Specified

IRF320

IRF321

IRF322

IRF323

UNITS

Drain to Source Breakdown Voltage (Note 1)

Drain to Gate Voltage (R

s = 20kQ) (Note 1 )

Continuous Drain Current

= 100°C

Pulsed Drain Current (Note 3)

Gate to Source Voltage

Maximum Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy Rating (Note 4)

Operating and Storage Temperature . . .

Maximum Temperature for Soldering

Leads at 0.063in (1 .6mm) from Case for 1 0s

Packaae Bodv for 10s. See TB334

Vnc>

. . . .Vrq

EA<;

400

3.3

2.1

±20

0.4

190

-55 to 150

350

3.3

2.1

±20

0.4

190

-55to150

400

2.8

1.8

±20

0.4

190

-55 to 150

300

260

350

2.8

1.8

±20

0.4

190

-55 to 150

300

260

W/°C

°C

Tnlen

300

260

300

260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

= 25°Cto 125°C.

Electrical Specifications

PARAMETER

= 25°C, Unless Otherwise Specified

SYMBOL

TEST CONDITIONS

= 250uA V

= 0V, (Figure 10)

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

IRF320, IRF322

IRF321, IRF323

Gate to Threshold Voltage

Zero Gate Voltage Drain Current

400

350

GS(TH)

4.0

250

M-A

VGS = VDS. ID = 250nA

= Rated BV

DSS

, V

= 0V

= 0.8 x Rated BV

DSS

, V

= 0V

Tj = 125°C

2.0

bss

On-State Drain Current (Note 2)

IRF320, IRF321

IRF322, IRF323

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

IRF320, IRF321

IRF322, IRF323

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain "Miller" Charge

!D(ON)

" ID<ON)

x r

DS(oi\i)MAx.

GS = iov

(Figure 7)

3.3

2.8

±100

'GSS

DS(ON)

= ±20V

= 1.8A, V

= 10V, (Figures 8, 9)

Sfs

1.5

1.8

2.7

1.8

2.5

VDS

10V

. 'D = 2.0A, (Figure 12)

1.7

'd(ON)

d(OFF)

VDD = 200V, i

= 3.3A, R

= 18U, R

= eon,

MOSFET Switching Times are Essentially

Independent of Operating Temperature

g(TOT)

= 10V, I

= 3.3A, V

= °-

8 x Rated

(REF) = 1.5mA, (Figures 14, 19, 20)

Operating Temperature

Qgs

Qgd

IRF320, IRF321, IRF322, IRF323

Electrical Specifications

PARAMETER

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

= 25°C, Unless Otherwise Specified (Continued)

SYMBOL

ISS

TEST CONDITIONS

= 25V, V

= 0V, f = 1MHz

(Figure 11)

MIN

TYP

450

100

5.0

MAX

UNITS

oss

RSS

Measured Between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die

Measured from the

Source Lead, 6mm

(0.25in) From the

Flange and the Source

Bonding Pad

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

Internal Source Inductance

12.5

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RBJC

9JA

2.5

°C/W

Free Air Operation

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

SYMBOL

TEST CONDITIONS

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

MIN

TYP

MAX

3.3

UNITS

'SDM

*JJ£

120

270

1.4

1.8

600

3.0

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

NOTES:

VSD

trr

= 25°C, I

= 3.3A, V

= 0V, (Figure 13)

Tj = 25°C, I

= 3.3A, dl

/dt = 100A/us

Tj = 25°C, I

= 3.3A, dl

/dt = 100A/us

QRR

0.64

2. Pulse test: pulse width < 300^3, duty cycle < 2%.

型号	IRF323	IRF320	IRF321	IRF322
描述	3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
厂商名称	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	unknow	unknown	unknow	unknow