型号
- 型号
- 关键词
| 型号 | IRF3709ZCLPBF | IRF3709ZCSTRRP | IRF3709ZCSTRLP |
|---|---|---|---|
| 描述 | MOSFET N-CH 30V 87A TO-262 | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 |
| 是否Rohs认证 | - | 符合 | 符合 |
| 包装说明 | - | LEAD FREE, PLASTIC, D2PAK-3 | LEAD FREE, PLASTIC, D2PAK-3 |
| Reach Compliance Code | - | compliant | compliant |
| ECCN代码 | - | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 60 mJ | 60 mJ |
| 外壳连接 | - | DRAIN | DRAIN |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 30 V | 30 V |
| 最大漏极电流 (ID) | - | 42 A | 42 A |
| 最大漏源导通电阻 | - | 0.0063 Ω | 0.0063 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | - | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | - | e3 | e3 |
| 湿度敏感等级 | - | 1 | 1 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 2 | 2 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | - | 260 | 260 |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | - | 350 A | 350 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 表面贴装 | - | YES | YES |
| 端子面层 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier |
| 端子形式 | - | GULL WING | GULL WING |
| 端子位置 | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | 30 | 30 |
| 晶体管应用 | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON |
| Base Number Matches | - | 1 | 1 |
