型号
- 型号
- 关键词
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
厂商名称：Infineon(英飞凌)
器件标准：
| 型号 | IRF3709ZCSTRLP | IRF3709ZCSTRRP | IRF3709ZCLPBF |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | MOSFET N-CH 30V 87A TO-262 |
| 是否Rohs认证 | 符合 | 符合 | - |
| 包装说明 | LEAD FREE, PLASTIC, D2PAK-3 | LEAD FREE, PLASTIC, D2PAK-3 | - |
| Reach Compliance Code | compliant | compliant | - |
| ECCN代码 | EAR99 | EAR99 | - |
| 雪崩能效等级（Eas） | 60 mJ | 60 mJ | - |
| 外壳连接 | DRAIN | DRAIN | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | 30 V | 30 V | - |
| 最大漏极电流 (ID) | 42 A | 42 A | - |
| 最大漏源导通电阻 | 0.0063 Ω | 0.0063 Ω | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | - |
| JESD-609代码 | e3 | e3 | - |
| 湿度敏感等级 | 1 | 1 | - |
| 元件数量 | 1 | 1 | - |
| 端子数量 | 2 | 2 | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | - |
| 峰值回流温度（摄氏度） | 260 | 260 | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - |
| 最大脉冲漏极电流 (IDM) | 350 A | 350 A | - |
| 认证状态 | Not Qualified | Not Qualified | - |
| 表面贴装 | YES | YES | - |
| 端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier | - |
| 端子形式 | GULL WING | GULL WING | - |
| 端子位置 | SINGLE | SINGLE | - |
| 处于峰值回流温度下的最长时间 | 30 | 30 | - |
| 晶体管应用 | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | - |
| Base Number Matches | 1 | 1 | - |