PD- 93931
PROVISIONAL
IRFBA34N50C
HEXFET
®
Power MOSFET
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
UninterruptIble Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
V
DSS
500V
R
DS(on)
typ.
0.070Ω
I
D
40A
Super-220™
Max.
40
25
160
310
2.5
± 20
5.0
-55 to + 150
300
20
Units
A
W
W/°C
V
V/ns
°C
N
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
480
34
31
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.40
–––
58
Units
°C/W
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1
6/2/00
IRFBA34N50C
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
PROVISIONAL
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.68
0.070
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.075
Ω
V
GS
= 10V, I
D
= 24A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Symbol
I
S
I
SM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
190
45
90
23
29
55
6.3
6330
3600
140
15150
140
460
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 20A
–––
I
D
= 20A
–––
nC V
DS
= 400V
–––
V
GS
= 10V,
–––
V
DD
= 250V
–––
I
D
= 20A
ns
–––
R
G
= 1.3Ω
–––
V
GS
= 10V,
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
40
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
––– 510 770
ns
T
J
= 125°C, I
F
= 20A
––– 11
17
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 0.83mH, R
G
= 25Ω,
I
AS
= 34A,
I
SD
≤
20A, di/dt
≤
42A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
www.irf.com
PROVISIONAL
IRFBA34N50C
Super-220™ Package Outline
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16
Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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