IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
8.9
2.1
3.9
Single
S
FEATURES
3.0
•
•
•
•
•
•
•
•
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9210, SiHFR9210)
Straight Lead (IRFU9210, SiHFU9210)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
S
G
D S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9210-GE3
IRFR9210PbF
SiHFR9210-E3
DPAK (TO-252)
SiHFR9210TR-GE3
IRFR9210TRPbF
a
SiHFR9210T-E3
a
IPAK (TO-251)
SiHFU9210-GE3
IRFU9210PbF
SiHFU9210-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Repetitive Avalanche
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
Mount)
e
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Temperature)
d
Single Pulse Avalanche Energy
b
Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 124 mH, R
g
= 25
,
I
AS
= - 1.9 A (see fig. 12).
c. I
SD
- 1.9 A, dI/dt
70 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0166-Rev. C, 04-Feb-13
Document Number: 91281
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 200
± 20
- 1.9
- 1.2
- 7.6
0.20
0.020
300
- 1.9
2.5
25
2.5
- 5.0
- 55 to + 150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
5.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.1 A
b
V
DS
= - 50 V, I
D
= - 1.1 A
- 200
-
- 2.0
-
-
-
-
0.98
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
170
54
16
-
-
-
8.0
12
11
13
4.5
7.5
-
-
-
8.9
2.1
3.9
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 1.3 A, V
DS
= - 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 100 V, I
D
= - 2.3 A,
R
g
= 24
,
R
D
= 41
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
110
0.56
- 1.9
A
- 7.6
- 5.8
220
1.1
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 1.9 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 2.3 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S13-0166-Rev. C, 04-Feb-13
Document Number: 91281
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0166-Rev. C, 04-Feb-13
Document Number: 91281
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0166-Rev. C, 04-Feb-13
Document Number: 91281
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
g
D.U.T.
+
-
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
DD
Fig. 10a - Switching Time Test Circuit
t
d(on)
V
GS
10 %
t
r
t
d(off)
t
f
90 %
V
DS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0166-Rev. C, 04-Feb-13
Document Number: 91281
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
stm32/stm8
