IRFY440C-JQR-B,IRFY440C-JQR-B pdf中文资料,IRFY440C-JQR-B引脚图,IRFY440C-JQR-B电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否无铅

含铅

是否Rohs认证

不符合

厂商名称

SEMELAB

零件包装代码

TO-257AB

包装说明

FLANGE MOUNT, S-MSFM-P3

针数

Reach Compliance Code

compliant

外壳连接

SOURCE

配置

SINGLE

最小漏源击穿电压

500 V

最大漏极电流 (ID)

7 A

最大漏源导通电阻

0.85 Ω

FET 技术

METAL-OXIDE SEMICONDUCTOR

JEDEC-95代码

TO-257AB

JESD-30 代码

S-MSFM-P3

元件数量

端子数量

工作模式

ENHANCEMENT MODE

封装主体材料

METAL

封装形状

SQUARE

封装形式

FLANGE MOUNT

峰值回流温度（摄氏度）

NOT SPECIFIED

极性/信道类型

N-CHANNEL

认证状态

Not Qualified

表面贴装

端子形式

PIN/PEG

端子位置

SINGLE

处于峰值回流温度下的最长时间

NOT SPECIFIED

晶体管元件材料

SILICON

Base Number Matches

文档预览

IRFY440C

Dimensions in mm (inches).

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

16.5 (0.65)

3.70 Dia. Nom

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

DSS

= 500V

= 7A

DS(ON)

= 0.85Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

Parameter

DSS

DS(ON)

ISS

td(on)

td(off)

Drain – Source Breakdown Voltage

Continuous Drain Current

Power Dissipation

Static Drain – Source On–State Resistance

Input Capacitance

Total Gate Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Min.

Typ.

Max.

500

100

0.85

Units

Ω

1300

68.5

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

13-Sep-02

参数对比

与IRFY440C-JQR-B相近的元器件有：IRFY440C-QR-B、IRFY440C-QR-BR1、IRFY440C-JQR-BR1。描述及对比如下：

型号	IRFY440C-JQR-B	IRFY440C-QR-B	IRFY440C-QR-BR1	IRFY440C-JQR-BR1
描述	7A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN	7A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN	7A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN	7A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN
是否无铅	含铅	含铅	不含铅	不含铅
是否Rohs认证	不符合	不符合	符合	符合
厂商名称	SEMELAB	SEMELAB	SEMELAB	SEMELAB
零件包装代码	TO-257AB	TO-257AB	TO-257AB	TO-257AB
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
针数	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	500 V	500 V	500 V	500 V
最大漏极电流 (ID)	7 A	7 A	7 A	7 A
最大漏源导通电阻	0.85 Ω	0.85 Ω	0.85 Ω	0.85 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AB	TO-257AB	TO-257AB	TO-257AB
JESD-30 代码	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1