型号
- 型号
- 关键词
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
厂商名称：International Rectifier （ Infineon ）
厂商官网：http://www.irf.com/
下载文档| 型号 | IRHQ4214 | IRHQ3214 | IRHQ7214 | IRHQ8214 |
|---|---|---|---|---|
| 描述 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | LCC | LCC | LCC | LCC |
| 包装说明 | CHIP CARRIER, R-CQCC-N28 | CHIP CARRIER, R-CQCC-N28 | CHIP CARRIER, R-CQCC-N28 | CHIP CARRIER, R-CQCC-N28 |
| 针数 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | compli | compli | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 62 mJ | 62 mJ | 62 mJ | 62 mJ |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 250 V | 250 V | 250 V | 250 V |
| 最大漏极电流 (Abs) (ID) | 1.6 A | 1.6 A | 1.6 A | 1.6 A |
| 最大漏极电流 (ID) | 1.6 A | 1.6 A | 1.6 A | 1.6 A |
| 最大漏源导通电阻 | 2.25 Ω | 2.25 Ω | 2.25 Ω | 2.25 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CQCC-N28 | R-CQCC-N28 | R-CQCC-N28 | R-CQCC-N28 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 4 | 4 | 4 | 4 |
| 端子数量 | 28 | 28 | 28 | 28 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 12 W | 12 W | 12 W | 12 W |
| 最大脉冲漏极电流 (IDM) | 6.4 A | 6.4 A | 6.4 A | 6.4 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |