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IS25LD020-JVLA3

Flash, 256KX8, PDSO8, 0.150 INCH, LEAD FREE, VVSOP-8

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
VSOP, TSOP8,.25
Reach Compliance Code
compliant
最大时钟频率 (fCLK)
100 MHz
数据保留时间-最小值
20
耐久性
200000 Write/Erase Cycles
JESD-30 代码
R-PDSO-G8
长度
4.9 mm
内存密度
2097152 bit
内存集成电路类型
FLASH
内存宽度
8
功能数量
1
端子数量
8
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-40 °C
组织
256KX8
封装主体材料
PLASTIC/EPOXY
封装代码
VSOP
封装等效代码
TSOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE
并行/串行
SERIAL
电源
3/3.3 V
编程电压
2.7 V
认证状态
Not Qualified
筛选级别
AEC-Q100
座面最大高度
0.88 mm
串行总线类型
SPI
最大待机电流
0.00001 A
最大压摆率
0.015 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.3 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
类型
NOR TYPE
宽度
3.9 mm
写保护
HARDWARE/SOFTWARE
Base Number Matches
1
文档预览
IS25CD512/010
IS25LD020
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
With 100 MHz Dual-Output SPI Bus Interface
Output SPI Bus Interface
FEATURES
• Low Power Consumption
Memory With 100 MHz Dual-
• Single Power Supply
Interface
- Typical 10
Memory
read current
MHz Dual-
mA active
With 100
Output SPI Bus
Operation
- Low voltage range: 2.70 V – 3.60 V (512Kbit / 1Mbit)
- Typical 15 mA program/erase current
Output SPI Bus Interface
2.30 V – 3.60 V (2Mbit)
• Memory Organization
-
IS25CD512: 64K x 8 (512 Kbit)
- IS25CD010: 128K x 8 (1 Mbit)
- IS25LD020: 256K x 8 (2 Mbit)
• Cost Effective Sector/Block Architecture
- 512Kb : Uniform 4KByte sectors / Two uniform 32KByte
blocks
- 1Mb : Uniform 4KByte sectors / Four uniform 32KByte
blocks
- 2Mb : Uniform 4KByte sectors / Four uniform 64KByte
blocks
• Low standby current 1uA (Typ)
• Serial Peripheral Interface (SPI) Compatible
- Supports single- or dual-output
- Supports SPI Modes 0 and 3
- Maximum 33 MHz clock rate for normal read
- Maximum 100 MHz clock rate for fast read
Page Program (up to 256 Bytes) Operation
- Typical 2 ms per page program
• Sector, Block or Chip Erase Operation
- Maximum 10 ms sector, block or chip erase
• Hardware Write Protection
- Protect and unprotect the device from write operation by
Write Protect (WP#) Pin
• Software Write Protection
-
The Block Protect (BP2, BP1, BP0) bits allow partial or
entire memory to be configured as read-only
• High Product Endurance
- Guaranteed 200,000 program/erase cycles per single
sector
- Minimum 20 years data retention
• Industrial Standard Pin-out and Package
- 8-pin SOIC 150mil
512Kb/ 1Mb / 2Mb
- 8-pin VVSOP 150mil
2Mb
- 8-pin WSON (5x6 mm)
512 Kb/ 2Mb
- 8-pin TSSOP
512 Kb / 1Mb / 2Mb
- 8-pin USON (2x3 mm)
512Kb
- KGD (Call Factory)
- Lead-free (Pb-free) package
- Automotive Temperature Ranges Available
• Security function
- Built in Safe Guard function and sector unlock function
to make the flash Robust (Appendix1&2)
GENERAL DESCRIPTION
The IS25CD512/010 and IS25LD020 are 512Kbit/ 1Mbit / 2Mbit Serial Peripheral Interface (SPI) Flash memories, providing
single- or dual-output. The devices are designed to support a 33 MHz clock rate in normal read mode, and 100 MHz in fast
read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage ranging to
perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.
The IS25CD512/010 and IS25LD020 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output
(SlO), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. They comply with all recognized command
codes and operations. The dual-output fast read operation provides and effective serial data rate of 200MHz.
The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program
operation. These devices are divided into uniform 4 KByte sectors or uniform 32 KByte blocks.(IS25LD020 is uniform 4
KByte sectors or uniform 64 KByte).
The IS25CD512/010 and IS25LD020 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are
offered in a variety of packages for all critical needs. The devices operate at wide temperatures between -40°C to +105°C.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
2/1/2013
1
IS25CD512/010
IS25LD020
CONNECTION DIAGRAMS
CE#
SO
1
8
7
Vcc
HOLD#
CE#
SO
1
2
8 Vcc
7 HOLD#
6 SCK
5 SIO
2
WP# 3
WP#
3
6
SCK
GND 4
GND
4
5
SIO
8-pin WSON
8-Pin SOIC/VVSOP
CE#
SO
WP#
GND
1
2
3
4
8
7
6
5
8-Pin TSSOP
Vcc
HOLD#
SCK
SIO
CE#
SO
WP#
GND
8-Pin USON
Vcc
HOLD#
SCK
SIO
PIN DESCRIPTIONS
SYMBOL
CE#
TYPE
INPUT
DESCRIPTION
SCK
SIO
SO
GND
Vcc
WP#
INPUT
INPUT/OUTPUT
OUTPUT
INPUT
HOLD#
INPUT
Chip Enable: CE# low activates the devices internal circuitries for
device operation. CE# high deselects the devices and switches into
standby mode to reduce the power consumption. When a device is not
selected, data will not be accepted via the serial input pin (SlO), and the
serial output pin (SO) will remain in a high impedance state.
Serial Data Clock
Serial Data Input/Output
Serial Data Output
Ground
Device Power Supply
Write Protect: A hardware program/erase protection for all or part of a
memory array. When the WP# pin is low, memory array write-protection depends on the
setting of BP2, BP1 and BP0 bits in the Status Register. When the WP# is high, the devices
are not write-protected.
Hold: Pause serial communication by the master device without resetting
the serial sequence.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
2/1/2013
2
IS25CD512/010
IS25LD020
BLOCK DIAGRAM
SIO
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
2/1/2013
3
IS25CD512/010
IS25LD020
SPI MODES DESCRIPTION
Multiple IS25CD512/010 and IS25LD020 devices can be
connected on the SPI serial bus and controlled by a SPI
Master, i.e. microcontroller, as shown in Figure 1. The
devices support either of two SPI modes:
Mode 0 (0, 0)
Mode 3 (1, 1)
The difference between these two modes is the clock polarity
when the SPI master is in Stand-by mode: the serial clock
remains at “0” (SCK = 0) for Mode 0 and the clock remains at
“1” (SCK = 1) for Mode 3. Please refer to Figure 2. For both
modes, the input data is latched on the rising edge of Serial
Clock (SCK), and the output data is available from the falling
edge of SCK.
Figure 1. Connection Diagram among SPI Master and SPI Slaves (Memory Devices)
SDIO
SPI Interface with
(0,0) or (1,1)
SDI
SCK
SCK
SPI Master
(i.e. Microcontroller)
CS3
CS2
CS1
CE#
SO
SIO
SCK
SO
SIO
SCK
SO
SIO
SPI Memory
Device
SPI Memory
Device
SPI Memory
Devic
e
CE#
WP#
HOLD#
WP#
HOLD#
CE#
WP#
HOLD#
Note: 1.
Modes Supported
Figure 2. SPI
The Write Protect (WP#) and Hold (HOLD#) signals should be driven high or low as
appropriate.
SCK
Mode 0 (0, 0)
SCK
Mode 3 (1, 1)
SIO
Input mode
SO
MSb
MSb
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
2/1/2013
4
IS25CD512/010
IS25LD020
SYSTEM CONFIGURATION
The IS25CD512/010 and IS25LD020 devices are designed to interface directly with the synchronous Serial Peripheral
Interface (SPI) of the Motorola MC68HCxx series of microcontrollers or any SPI interface-equipped system controllers. The
devices have two superset features that can be enabled through specific software instructions and the Configuration
Register:
Memory Density
Block No.
Block Size
Sector Size
Sector No.
(Kbytes)
(Kbytes)
Sector 0
(1)
4
4
:
4
4
4
:
4
"
"
Sector
Size
(KBytes)
4
4
:
4
4
4
:
4
:
4
Address Range
000000h - 000FFFh
001000h - 001FFFh
:
007000h - 007FFFh
008000h - 008FFFh
009000h - 009FFFh
000000h - 006FFFh
00F000h - 00FFFFh
010000h - 017FFFh
018000h - 01FFFFh
Block 0
512 Kbit
1 Mbit
Block 1
32
Sector 1
:
Sector 7
Sector 8
Sector 9
:
Sector 15
"
"
32
Block 2
Block 3
32
32
Block
Size
(KBytes)
Memory Density
Block No.
Sector No.
Sector 0
Address Range
000000h - 000FFFh
001000h - 001FFFh
:
00F000h - 00FFFFh
010000h - 010FFFh
011000h - 011FFFh
:
01F000h - 01FFFFh
:
030000h – 03FFFFh
Block 0
64
Sector 1
:
Sector 15
Sector 16
2 Mbit
Block 1
64
Sector 17
:
Sector 31
:
:
:
Block 3
:
64
Table 1-1. Block/Sector Addresses of IS25CD512/010 and IS25LD020
Integrated Silicon Solution, Inc.- www.issi.com
Rev. C
2/1/2013
5
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参数对比
与IS25LD020-JVLA3相近的元器件有:IS25LD020-JDLA3、IS25LD020-JNLA3。描述及对比如下:
型号 IS25LD020-JVLA3 IS25LD020-JDLA3 IS25LD020-JNLA3
描述 Flash, 256KX8, PDSO8, 0.150 INCH, LEAD FREE, VVSOP-8 Flash, 256KX8, PDSO8, LEAD FREE, TSSOP-8 Flash, 256KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8
是否Rohs认证 符合 符合 符合
包装说明 VSOP, TSOP8,.25 TSSOP, TSSOP8,.25 SOP, SOP8,.25
Reach Compliance Code compliant compliant compliant
最大时钟频率 (fCLK) 100 MHz 100 MHz 100 MHz
数据保留时间-最小值 20 20 20
耐久性 200000 Write/Erase Cycles 200000 Write/Erase Cycles 200000 Write/Erase Cycles
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
长度 4.9 mm 4.4 mm 4.9 mm
内存密度 2097152 bit 2097152 bit 2097152 bit
内存集成电路类型 FLASH FLASH FLASH
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
字数 262144 words 262144 words 262144 words
字数代码 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 256KX8 256KX8 256KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSOP TSSOP SOP
封装等效代码 TSOP8,.25 TSSOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL
电源 3/3.3 V 3/3.3 V 3/3.3 V
编程电压 2.7 V 2.7 V 2.7 V
认证状态 Not Qualified Not Qualified Not Qualified
筛选级别 AEC-Q100 AEC-Q100 AEC-Q100
座面最大高度 0.88 mm 1.2 mm 1.75 mm
串行总线类型 SPI SPI SPI
最大待机电流 0.00001 A 0.00001 A 0.00001 A
最大压摆率 0.015 mA 0.015 mA 0.015 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING GULL WING
端子节距 1.27 mm 0.65 mm 1.27 mm
端子位置 DUAL DUAL DUAL
类型 NOR TYPE NOR TYPE NOR TYPE
宽度 3.9 mm 3 mm 3.9 mm
写保护 HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE
Base Number Matches 1 1 1
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