首页 > 器件类别 > 存储 > 存储

IS42S32160F-6BL

Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

器件类别:存储    存储   

厂商名称:Integrated Silicon Solution ( ISSI )

器件标准:

下载文档
IS42S32160F-6BL 在线购买

供应商:

器件:IS42S32160F-6BL

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Integrated Silicon Solution ( ISSI )
包装说明
TFBGA, BGA90,9X15,32
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
6 weeks
访问模式
FOUR BANK PAGE BURST
最长访问时间
5.4 ns
其他特性
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
最大时钟频率 (fCLK)
166 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PBGA-B90
长度
13 mm
内存密度
536870912 bit
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
90
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16MX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA90,9X15,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
电源
3.3 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
1,2,4,8,FP
最大待机电流
0.004 A
最大压摆率
0.245 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
宽度
8 mm
参数对比
与IS42S32160F-6BL相近的元器件有:IS42S32160F-7TLI、IS42S32160F-6BLI、IS42S32160F-7BLI、IS42S32160F-7TL、IS42S32160F-75EBLI、IS42S32160F-6TL、IS42S32160F-6TLI、IS42S32160F-7BL。描述及对比如下:
型号 IS42S32160F-6BL IS42S32160F-7TLI IS42S32160F-6BLI IS42S32160F-7BLI IS42S32160F-7TL IS42S32160F-75EBLI IS42S32160F-6TL IS42S32160F-6TLI IS42S32160F-7BL
描述 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 Synchronous DRAM, 16MX32, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 TFBGA, BGA90,9X15,32 TFBGA, TSSOP86,.46,20 TFBGA, BGA90,9X15,32 TFBGA, BGA90,9X15,32 TSOP2, TSSOP86,.46,20 TFBGA, TSOP2, TSSOP86,.46,20 TFBGA, TSSOP86,.46,20 TFBGA, BGA90,9X15,32
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compli
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
其他特性 PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 代码 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PDSO-G86 R-PBGA-B90 R-PDSO-G86 R-PBGA-B90 R-PBGA-B90
长度 13 mm 13 mm 13 mm 13 mm 22.22 mm 13 mm 22.22 mm 13 mm 13 mm
内存密度 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bi
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1
端子数量 90 90 90 90 86 90 86 90 90
字数 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 85 °C 85 °C 70 °C 85 °C 70 °C 85 °C 70 °C
最低工作温度 - -40 °C -40 °C -40 °C - -40 °C - -40 °C -
组织 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32 16MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TSOP2 TFBGA TSOP2 TFBGA TFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES YES YES YES
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子形式 BALL BALL BALL BALL GULL WING BALL GULL WING BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.5 mm 0.8 mm 0.5 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM DUAL BOTTOM DUAL BOTTOM BOTTOM
宽度 8 mm 8 mm 8 mm 8 mm 10.16 mm 8 mm 10.16 mm 8 mm 8 mm
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Factory Lead Time 6 weeks 6 weeks 6 weeks 6 weeks 6 weeks - 6 weeks 6 weeks 6 weeks
最长访问时间 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns - 5.4 ns 5.4 ns 5.4 ns
最大时钟频率 (fCLK) 166 MHz 143 MHz 166 MHz 143 MHz 143 MHz - 166 MHz 166 MHz 143 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON - COMMON COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE
封装等效代码 BGA90,9X15,32 TSSOP86,.46,20 BGA90,9X15,32 BGA90,9X15,32 TSSOP86,.46,20 - TSSOP86,.46,20 TSSOP86,.46,20 BGA90,9X15,32
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
刷新周期 8192 8192 8192 8192 8192 - 8192 8192 8192
连续突发长度 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A - 0.004 A 0.004 A 0.004 A
最大压摆率 0.245 mA 0.23 mA 0.245 mA 0.23 mA 0.23 mA - 0.245 mA 0.245 mA 0.23 mA
Base Number Matches - 1 1 1 1 1 - - -
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消