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IS42/45SM/RM/VM16160E

16Bits

4Banks Mobile Synchronous DRAM

Description

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features



JEDEC standard 3.3V, 2.5V, 1.8V power supply.

• Auto refresh and self refresh.

• All pins are compatible with LVCMOS interface.

• 8K refresh cycle / 64ms.

• Programmable Burst Length and Burst Type.

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

• Programmable CAS Latency : 2,3 clocks.

• All inputs and outputs referenced to the positive edge of the

system clock.

• Data mask function by DQM.

• Internal 4 banks operation.

• Burst Read Single Write operation.

• Special Function Support.

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

•

Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. 0C | May 2013

www.issi.com

- DRAM@issi.com

IS42/45SM/RM/VM16160E

Figure1: 54Ball FBGA Ball Assignment

VSS

DQ14

DQ12

DQ10

DQ8

UDQM

A12

VSS

DQ15

DQ13

DQ11

DQ9

CLK

A11

VSSQ

VDDQ

VSSQ

VDDQ

VSS

CKE

VDDQ

VSSQ

VDDQ

VSSQ

VDD

/CAS

BA0

DQ0

DQ2

DQ4

DQ6

LDQM

/RAS

BA1

VDD

DQ1

DQ3

DQ5

DQ7

/WE

/CS

A10

VDD

[Top View]

Rev. 0C | May 2013

www.issi.com

- DRAM@issi.com

IS42/45SM/RM/VM16160E

Table2: Pin Descriptions

CLK

Pin Name

System Clock

Descriptions

The system clock input. All other inputs are registered to the

SDRAM on the rising edge CLK.

Controls internal clock signal and when deactivated, the SDRAM

will be one of the states among power down, suspend or self

refresh.

Enable or disable all inputs except CLK, CKE and DQM.

Selects bank to be activated during RAS activity.

Selects bank to be read/written during CAS activity.

Row Address

Column Address

Auto Precharge

: RA0~RA12

: CA0~CA8

: A10

CKE

/CS

BA0~BA1

Clock Enable

Chip Select

Bank Address

A0~A12

Address

Row Address Strobe,

Column Address Strobe,

Write Enable

Data Input/Output Mask

Data Input/Output

Power Supply/Ground

Data Output Power/Ground

No Connection

/RAS, /CAS, /WE

RAS, CAS and WE define the operation.

Refer function truth table for details.

Controls output buffers in read mode and masks input data in

write mode.

Data input/output pin.

Power supply for internal circuits and input buffers.

Power supply for output buffers.

No connection.

LDQM,UDQM

DQ0~DQ15

VDD/VSS

VDDQ/VSSQ

Rev. 0C | May 2013

www.issi.com

- DRAM@issi.com

IS42/45SM/RM/VM16160E

Figure2: Functional Block Diagram

CLK

CKE

EXTENDED

MODE

CLOCK

GENERATOR

TCSR

PASR

BANK D

BANK C

BANK B

BANK A

ROW DECODER

ADDRESS

ROW

ADDRESS

BUFFER &

REFRESH

COUNTER

MODE

SENSE AMPLIFIER

/CS

/RAS

/CAS

/WE

COLUMN

ADDRESS

BUFFER &

BURST

COUNTER

COLUMN DECODER

& LATCH CIRCUIT

Rev. 0C | May 2013

COMMAND DECODER

CONTROL LOGIC

DATA CONTROL CIRCUIT

DQM

LATCH CIRCUIT

INPUT & OUTPUT

BUFFER

www.issi.com

- DRAM@issi.com

IS42/45SM/RM/VM16160E

Figure3: Simplified State Diagram

EXTENDED

MODE

SET

SELF

REFRESH

MODE

SET

MRS

IDLE

REF

CBR

REFRESH

ACT

DEEP

POWER

DOWN

POWER

DOWN

ROW

ACTIVE

CKE



CKE

ACTIVE

POWER

DOWN

WRITE

READ

PRE

WRITE

SUSPEND

CKE



WRITE

CKE

READ

WRITE

CKE



CKE

READ

SUSPEND

WRITE A

SUSPEND

CKE



WRITE A

CKE

READ A

CKE



CKE

READ A

SUSPEND

POWER

PRECHARGE

PRE-

CHARGE

Automatic Sequence

Manual Input

Rev. 0C | May 2013

www.issi.com

- DRAM@issi.com

参数对比

与IS42VM16160E-75BLI相近的元器件有：IS42VM16160E-75BLI-TR、IS42RM16160E-75BLI-TR、IS42SM16160E-75BLI-TR、IS42RM16160E-6BLI、IS42VM16160E-6BLI、IS42RM16160E-6BLI-TR、IS42RM16160E-75BLI、IS42SM16160E-75BLI。描述及对比如下：

型号	IS42VM16160E-75BLI	IS42VM16160E-75BLI-TR	IS42RM16160E-75BLI-TR	IS42SM16160E-75BLI-TR	IS42RM16160E-6BLI	IS42VM16160E-6BLI	IS42RM16160E-6BLI-TR	IS42RM16160E-75BLI	IS42SM16160E-75BLI
描述	DRAM 256M, 1.8V, 133Mhz 16Mx16 Mobile SDR	DRAM 256M, 1.8V, Mobile SDRAM,16Mx16,133Mhz	DRAM 256M, 2.5V, Mobile SDRAM,16Mx16,143Mhz	DRAM 256M, 3.3V, Mobile SDRAM,16Mx16,133Mhz	DRAM 256M 2.5V 166Mhz 16Mx16 Mobile SDR	DRAM 256M, 1.8V, 166Mhz 16Mx16 Mobile SDR	DRAM 256M, 2.5V, Mobile SDRAM,16Mx16,166Mhz	DRAM 256M, 2.5V, 143Mhz 16Mx16 Mobile SDR	DRAM 256M, 3.3V, 133Mhz 16Mx16 Mobile SDR
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
RoHS	Details	Details	Details	Details	Details	Details	Details	Details	Details
类型 Type	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile
Data Bus Width	16 bit	16 bit	16 bit	16 bit	16 bit	16 bit	16 bit	16 bit	16 bit
Organization	16 M x 16	16 M x 16	16 M x 16	16 M x 16	16 M x 16	16 M x 16	16 M x 16	16 M x 16	16 M x 16
封装 / 箱体 Package / Case	BGA-54	BGA-54	BGA-54	BGA-54	BGA-54	BGA-54	BGA-54	BGA-54	BGA-54
Memory Size	256 Mbit	256 Mbit	256 Mbit	256 Mbit	256 Mbit	256 Mbit	256 Mbit	256 Mbit	256 Mbit
Maximum Clock Frequency	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz	166 MHz	166 MHz	133 MHz	133 MHz
Access Time	7.5 ns	7.5 ns	7.5 ns	7.5 ns	6 ns	6 ns	6 ns	7.5 ns	7.5 ns
电源电压-最大 Supply Voltage - Max	1.95 V	1.95 V	3 V	3.6 V	3 V	1.95 V	3 V	3 V	3.6 V
电源电压-最小 Supply Voltage - Min	1.7 V	1.7 V	2.3 V	2.7 V	2.3 V	1.7 V	2.3 V	2.3 V	2.7 V
Supply Current - Max	80 mA	80 mA	80 mA	80 mA	90 mA	90 mA	90 mA	80 mA	80 mA
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
工作电源电压 Operating Supply Voltage	1.8 V	1.8 V	2.5 V	3.3 V	2.5 V	1.8 V	2.5 V	2.5 V	3.3 V
工厂包装数量 Factory Pack Quantity	348	2500	2500	2500	348	348	2500	348	348
单位重量 Unit Weight	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz	0.003517 oz
系列 Packaging	Tray	Reel	Reel	Reel	Tray	Tray	Reel	Tray	Tray