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IS42RM16160E-75BLI-TR

DRAM 256M, 2.5V, Mobile SDRAM,16Mx16,143Mhz

器件类别：存储   

厂商名称：ISSI(芯成半导体)

厂商官网：http://www.issi.com/

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
DRAM
RoHS
Details
类型
Type
SDRAM Mobile
Data Bus Width
16 bit
Organization
16 M x 16
封装 / 箱体
Package / Case
BGA-54
Memory Size
256 Mbit
Maximum Clock Frequency
133 MHz
Access Time
7.5 ns
电源电压-最大
Supply Voltage - Max
3 V
电源电压-最小
Supply Voltage - Min
2.3 V
Supply Current - Max
80 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
安装风格
Mounting Style
SMD/SMT
工作电源电压
Operating Supply Voltage
2.5 V
工厂包装数量
Factory Pack Quantity
2500
单位重量
Unit Weight
0.003517 oz
文档预览
IS42/45SM/RM/VM16160E
4M
x
16Bits
x
4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16
bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input
and output voltage levels are compatible with LVCMOS.
Features
JEDEC standard 3.3V, 2.5V, 1.8V power supply.
• Auto refresh and self refresh.
• All pins are compatible with LVCMOS interface.
• 8K refresh cycle / 64ms.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• All inputs and outputs referenced to the positive edge of the
system clock.
• Data mask function by DQM.
• Internal 4 banks operation.
• Burst Read Single Write operation.
• Special Function Support.
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
- Programmable Driver Strength Control
•
Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength
- Deep Power Down Mode
• Automatic precharge, includes CONCURRENT Auto Precharge
Mode and controlled Precharge.
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. 0C | May 2013
www.issi.com
- DRAM@issi.com
1
IS42/45SM/RM/VM16160E
Figure1: 54Ball FBGA Ball Assignment
1
A
B
C
D
E
F
G
H
J
VSS
DQ14
DQ12
DQ10
DQ8
UDQM
A12
A8
VSS
2
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
A5
3
VSSQ
VDDQ
VSSQ
VDDQ
VSS
CKE
A9
A6
A4
4
5
6
7
VDDQ
VSSQ
VDDQ
VSSQ
VDD
/CAS
BA0
A0
A3
8
DQ0
DQ2
DQ4
DQ6
LDQM
/RAS
BA1
A1
A2
9
VDD
DQ1
DQ3
DQ5
DQ7
/WE
/CS
A10
VDD
[Top View]
Rev. 0C | May 2013
www.issi.com
- DRAM@issi.com
2
IS42/45SM/RM/VM16160E
Table2: Pin Descriptions
Pin
CLK
Pin Name
System Clock
Descriptions
The system clock input. All other inputs are registered to the
SDRAM on the rising edge CLK.
Controls internal clock signal and when deactivated, the SDRAM
will be one of the states among power down, suspend or self
refresh.
Enable or disable all inputs except CLK, CKE and DQM.
Selects bank to be activated during RAS activity.
Selects bank to be read/written during CAS activity.
Row Address
Column Address
Auto Precharge
: RA0~RA12
: CA0~CA8
: A10
CKE
/CS
BA0~BA1
Clock Enable
Chip Select
Bank Address
A0~A12
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
/RAS, /CAS, /WE
RAS, CAS and WE define the operation.
Refer function truth table for details.
Controls output buffers in read mode and masks input data in
write mode.
Data input/output pin.
Power supply for internal circuits and input buffers.
Power supply for output buffers.
No connection.
LDQM,UDQM
DQ0~DQ15
VDD/VSS
VDDQ/VSSQ
NC
Rev. 0C | May 2013
www.issi.com
- DRAM@issi.com
3
IS42/45SM/RM/VM16160E
Figure2: Functional Block Diagram
CLK
CKE
EXTENDED
MODE
REGISTER
CLOCK
GENERATOR
TCSR
PASR
BANK D
BANK C
BANK B
BANK A
ROW DECODER
ROW DECODER
ROW DECODER
ROW DECODER
ADDRESS
ROW
ADDRESS
BUFFER &
REFRESH
COUNTER
MODE
REGISTER
SENSE AMPLIFIER
/CS
/RAS
/CAS
/WE
COLUMN
ADDRESS
BUFFER &
BURST
COUNTER
COLUMN DECODER
& LATCH CIRCUIT
Rev. 0C | May 2013
COMMAND DECODER
CONTROL LOGIC
DATA CONTROL CIRCUIT
DQM
LATCH CIRCUIT
INPUT & OUTPUT
BUFFER
DQ
www.issi.com
- DRAM@issi.com
4
IS42/45SM/RM/VM16160E
Figure3: Simplified State Diagram
EXTENDED
MODE
REGISTER
SET
SELF
REFRESH
MODE
REGISTER
SET
MRS
IDLE
REF
CBR
REFRESH
ACT
DEEP
POWER
DOWN
POWER
DOWN
ROW
ACTIVE
CKE
CKE
ACTIVE
POWER
DOWN
WRITE
READ
PRE
WRITE
SUSPEND
CKE
WRITE
CKE
READ
READ
WRITE
CKE
CKE
READ
SUSPEND
WRITE A
SUSPEND
CKE
WRITE A
CKE
READ A
CKE
CKE
READ A
SUSPEND
POWER
ON
PRECHARGE
PRE-
CHARGE
Automatic Sequence
Manual Input
Rev. 0C | May 2013
www.issi.com
- DRAM@issi.com
5
查看更多>
参数对比
与IS42RM16160E-75BLI-TR相近的元器件有：IS42VM16160E-75BLI-TR、IS42SM16160E-75BLI-TR、IS42RM16160E-6BLI、IS42VM16160E-6BLI、IS42RM16160E-6BLI-TR、IS42RM16160E-75BLI、IS42SM16160E-75BLI、IS42VM16160E-75BLI。描述及对比如下：
型号 IS42RM16160E-75BLI-TR IS42VM16160E-75BLI-TR IS42SM16160E-75BLI-TR IS42RM16160E-6BLI IS42VM16160E-6BLI IS42RM16160E-6BLI-TR IS42RM16160E-75BLI IS42SM16160E-75BLI IS42VM16160E-75BLI
描述 DRAM 256M, 2.5V, Mobile SDRAM,16Mx16,143Mhz DRAM 256M, 1.8V, Mobile SDRAM,16Mx16,133Mhz DRAM 256M, 3.3V, Mobile SDRAM,16Mx16,133Mhz DRAM 256M 2.5V 166Mhz 16Mx16 Mobile SDR DRAM 256M, 1.8V, 166Mhz 16Mx16 Mobile SDR DRAM 256M, 2.5V, Mobile SDRAM,16Mx16,166Mhz DRAM 256M, 2.5V, 143Mhz 16Mx16 Mobile SDR DRAM 256M, 3.3V, 133Mhz 16Mx16 Mobile SDR DRAM 256M, 1.8V, 133Mhz 16Mx16 Mobile SDR
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer		 ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
产品种类
Product Category		 DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
RoHS Details Details Details Details Details Details Details Details Details
类型
Type		 SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile
Data Bus Width 16 bit 16 bit 16 bit 16 bit 16 bit 16 bit 16 bit 16 bit 16 bit
Organization 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16 16 M x 16
封装 / 箱体
Package / Case		 BGA-54 BGA-54 BGA-54 BGA-54 BGA-54 BGA-54 BGA-54 BGA-54 BGA-54
Memory Size 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit 256 Mbit
Maximum Clock Frequency 133 MHz 133 MHz 133 MHz 166 MHz 166 MHz 166 MHz 133 MHz 133 MHz 133 MHz
Access Time 7.5 ns 7.5 ns 7.5 ns 6 ns 6 ns 6 ns 7.5 ns 7.5 ns 7.5 ns
电源电压-最大
Supply Voltage - Max		 3 V 1.95 V 3.6 V 3 V 1.95 V 3 V 3 V 3.6 V 1.95 V
电源电压-最小
Supply Voltage - Min		 2.3 V 1.7 V 2.7 V 2.3 V 1.7 V 2.3 V 2.3 V 2.7 V 1.7 V
Supply Current - Max 80 mA 80 mA 80 mA 90 mA 90 mA 90 mA 80 mA 80 mA 80 mA
最小工作温度
Minimum Operating Temperature		 - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C
最大工作温度
Maximum Operating Temperature		 + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C + 85 C
安装风格
Mounting Style		 SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
工作电源电压
Operating Supply Voltage		 2.5 V 1.8 V 3.3 V 2.5 V 1.8 V 2.5 V 2.5 V 3.3 V 1.8 V
工厂包装数量
Factory Pack Quantity		 2500 2500 2500 348 348 2500 348 348 348
单位重量
Unit Weight		 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz 0.003517 oz
系列
Packaging		 Reel Reel Reel Tray Tray Reel Tray Tray Tray
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器件捷径:
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