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IS61LV51216-10MLI

SRAM 8Mb 512Kx16 10ns 3.3v

器件类别:存储    存储   

厂商名称:ISSI(芯成半导体)

厂商官网:http://www.issi.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ISSI(芯成半导体)
零件包装代码
BGA
包装说明
9 X 11 MM, LEAD FREE, MINI, BGA-48
针数
48
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
10 ns
I/O 类型
COMMON
JESD-30 代码
R-XBGA-B48
JESD-609代码
e1
长度
11 mm
内存密度
8388608 bit
内存集成电路类型
STANDARD SRAM
内存宽度
16
湿度敏感等级
3
功能数量
1
端子数量
48
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX16
输出特性
3-STATE
封装主体材料
UNSPECIFIED
封装代码
TFBGA
封装等效代码
BGA48,6X8,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.025 A
最小待机电流
3.14 V
最大压摆率
0.11 mA
最大供电电压 (Vsup)
3.63 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
0.75 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
宽度
9 mm
Base Number Matches
1
文档预览
IS61LV51216
IS64LV51216
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 m
A
(typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available
ISSI
DECEMBER 2005
®
DESCRIPTION
The
ISSI
IS61/64LV51216 is a high-speed, 8M-bit static
RAM organized as 525,288 words by 16 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit de-
sign techniques, yields high-performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61/64LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
1
IS61LV51216
IS64LV51216
TRUTH TABLE
I/O PIN
Mode
Not Selected
Output Disabled
Read
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O0-I/O7
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
ISSI
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
®
Write
I
CC
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
A18
A14
A13
A12
A11
A10
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
CE
OE
WE
LB
UB
NC
V
DD
GND
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
IS61LV51216
IS64LV51216
PIN CONFIGURATIONS
48-Pin mini BGA (9mmx11mm)
PIN DESCRIPTIONS
A0-A18
1
2
3
4
5
6
ISSI
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
®
1
2
3
4
5
6
7
I/O0-I/O15
CE
OE
WE
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
VDD
I/O
14
I/O
15
A18
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
A17
GND
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
N/C
I/O
0
I/O
2
LB
UB
NC
V
DD
GND
VDD
GND
I/O
6
I/O
7
NC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter
V
TERM
V
DD
T
STG
P
T
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
DD
+0.5
–0.3 to +4.0
–65 to +150
1.0
Unit
V
V
°C
W
8
9
10
11
12
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
3
IS61LV51216
IS64LV51216
OPERATING RANGE
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
DD
3.3V +10%, -5%
3.3V +10%, -5%
3.3V +10%, -5%
ISSI
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
GND
V
IN
V
DD
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
2.2
–0.3
–1
–5
-10
–1
–5
-10
Max.
0.4
V
DD
+ 0.3
0.8
1
5
-10
1
5
-10
Unit
V
V
V
V
µA
I
LO
Output Leakage
GND
V
OUT
V
DD
Outputs Disabled
µA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
-8
Min. Max.
110
120
30
35
20
25
-10
Min. Max.
100
110
30
35
20
25
-12
Min. Max.
90
100
120
30
35
40
20
25
30
Unit
mA
I
SB
1
mA
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
IS61LV51216
IS64LV51216
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
ISSI
®
1
2
3
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
4
5
6
7
319
Ω
50Ω
1.5V
30 pF
Including
jig and
scope
AC TEST LOADS
Z
O
= 50Ω
OUTPUT
3.3V
8
353
Ω
OUTPUT
9
10
11
12
5 pF
Including
jig and
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/06/05
5
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参数对比
与IS61LV51216-10MLI相近的元器件有:IS61LV51216-8T、IS61LV51216-10T、IS61LV51216-10TI-TR、IS61LV51216-8TL-TR。描述及对比如下:
型号 IS61LV51216-10MLI IS61LV51216-8T IS61LV51216-10T IS61LV51216-10TI-TR IS61LV51216-8TL-TR
描述 SRAM 8Mb 512Kx16 10ns 3.3v SRAM 8Mb 512Kx16 8ns 3.3v SRAM 8Mb 512Kx16 10ns 3.3v SRAM 8Mb 512Kx16 10ns 3.3v SRAM 8Mb 512Kx16 8ns 3.3v
产品种类
Product Category
- SRAM SRAM SRAM SRAM
制造商
Manufacturer
- ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
RoHS - No No No Details
Memory Size - 8 Mbit 8 Mbit 8 Mbit 8 Mbit
Organization - 512 k x 16 512 k x 16 512 k x 16 512 k x 16
Access Time - 8 ns 10 ns 10 ns 8 ns
接口类型
Interface Type
- Parallel Parallel Parallel Parallel
电源电压-最大
Supply Voltage - Max
- 3.6 V 3.6 V 3.6 V 3.6 V
电源电压-最小
Supply Voltage - Min
- 3.135 V 3.135 V 3.135 V 3.135 V
Supply Current - Max - 110 mA 100 mA 110 mA 110 mA
最小工作温度
Minimum Operating Temperature
- 0 C 0 C - 40 C 0 C
最大工作温度
Maximum Operating Temperature
- + 70 C + 70 C + 85 C + 70 C
安装风格
Mounting Style
- SMD/SMT SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
- TSOP-44 TSOP-44 TSOP-44 TSOP-44
数据速率
Data Rate
- SDR SDR SDR SDR
Moisture Sensitive - Yes Yes Yes Yes
Number of Ports - 1 1 1 1
工厂包装数量
Factory Pack Quantity
- 135 135 1000 1000
类型
Type
- Asynchronous Asynchronous Asynchronous Asynchronous
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器件捷径:
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