without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
1
IS61LV5128AL
PIN CONFIGURATION
36 mini BGA
44-Pin TSOP (Type II)
ISSI
3
4
5
6
®
1
2
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
V
DD
I/O6
I/O7
A9
A1
A2
NC
WE
NC
A3
A4
A5
A6
A7
A8
I/O0
I/O1
V
DD
GND
A18
OE
A10
CE
A11
A17
A16
A12
A15
A13
I/O2
I/O3
A14
NC
NC
A0
A1
A2
A3
A4
CE
I/O0
I/O1
V
DD
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
V
DD
I/O5
I/O4
A14
A13
A12
A11
A10
NC
NC
NC
PIN DESCRIPTIONS
A0-A18
CE
OE
WE
I/O0-I/O7
V
DD
GND
NC
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Bidirectional Ports
Power
Ground
No Connection
36-Pin SOJ
A0
A1
A2
A3
A4
CE
I/O0
I/O1
V
DD
GND
I/O2
I/O3
WE
A5
A6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
V
DD
I/O5
I/O4
A14
A13
A12
A11
A10
NC
TRUTH TABLE
Mode
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
Not Selected
(Power-down)
Output Disabled
Read
Write
A7
A8
A9
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
IS61LV5128AL
ISSI
Value
–0.5 to V
DD
+ 0.5
–65 to +150
1.0
Unit
V
°C
W
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE
V
DD
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
10ns
3.3V +10%, -5%
3.3V +10%, -5%
12ns
3.3V +10%
3.3V +10%
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
3
IS61LV5128AL
ISSI
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.0
–0.3
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Com.
Ind.
Com.
Ind.
–2
–5
–2
–5
Max.
—
0.4
V
DD
+ 0.3
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
I
SB
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = f
MAX
.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
Com.
Ind.
-10
Min. Max.
—
—
—
—
—
—
—
—
90
95
40
45
20
25
15
20
-12
Min. Max.
—
—
—
—
—
—
—
—
85
90
35
40
20
25
15
20
Unit
mA
mA
I
SB
1
mA
I
SB
2
V
DD
= Max.,
Com.
CE
≥
V
DD
– 0.2V,
Ind.
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
IS61LV5128AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
Power Up Time
Power Down Time
-10
Min. Max.
10
—
2
—
—
—
0
0
3
0
—
—
10
—
10
4
4
—
4
—
—
10
-12
Min. Max.
12
—
2
—
—
—
0
0
3
0
—
—
12
—
12
5
5
—
6
—
—
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISSI
®
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
PU
t
PD
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
319
Ω
3.3V
3.3V
319
Ω
OUTPUT
30 pF
Including
jig and
scope
353
Ω
OUTPUT
5 pF
Including
jig and
scope
353
Ω
Figure 1
Figure 2
5
Integrated Silicon Solution, Inc. — www.issi.com —
微电子学专家胡正明23日晚间在旧金山联邦俱乐部发表演说时表示，未来电子业的发展就是电脑晶片愈来愈少，晶片上储存的资料却愈来愈多，能发挥更多功能，目前人人都拿在手上的智能手机就是一个好例子。 被誉为「三维传输设计之父」（Father of 3D Transistors）的胡正明，毕业于台湾大学电机工程系。早年来美留学，在柏克莱加大获得硕士及博士。他曾在麻省理工学院任教，也是高科技公司创办人、...[详细]
stm32/stm8
