型号
- 型号
- 关键词
SRAM 4Mb 512Kx8 55ns Async SRAM
器件类别：存储
厂商名称：ISSI(芯成半导体)
厂商官网：http://www.issi.com/
下载文档| 型号 | IS62WV5128BLL-55BLI-TR | IS62WV5128BLL-55HLI | IS62WV5128BLL-55HLI-TR | IS62WV5128BLL-55BLI | IS62WV5128BLL-55TLI-TR | IS62WV5128BLL-55QLI |
|---|---|---|---|---|---|---|
| 描述 | SRAM 4Mb 512Kx8 55ns Async SRAM | SRAM 4Mb 512Kx8 55ns Async SRAM | SRAM 4Mb 512Kx8 55ns Async SRAM | SRAM 4Mb 512Kx8 55ns Async SRAM | SRAM 4Mb 512Kx8 55ns Async SRAM | SRAM 4M (512Kx8) 55ns Async SRAM |
| 是否无铅 | - | 不含铅 | 不含铅 | 不含铅 | - | 不含铅 |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | - | 符合 |
| 零件包装代码 | - | TSOP1 | TSOP1 | BGA | - | SOIC |
| 包装说明 | - | TSOP1, TSSOP32,.56,20 | TSOP1, | TFBGA, BGA36,6X8,30 | - | SOP, SOP32,.56 |
| Reach Compliance Code | - | compliant | compliant | compliant | - | compliant |
| ECCN代码 | - | 3A991 | 3A991.B.2.A | 3A991.B.2.A | - | 3A991 |
| Factory Lead Time | - | 8 weeks | 8 weeks | 8 weeks | - | 8 weeks |
| 最长访问时间 | - | 55 ns | 55 ns | 55 ns | - | 55 ns |
| JESD-30 代码 | - | R-PDSO-G32 | R-PDSO-G32 | R-PBGA-B36 | - | R-PDSO-G32 |
| JESD-609代码 | - | e3 | e3 | e1 | - | e3 |
| 长度 | - | 11.8 mm | 11.8 mm | 8 mm | - | 20.445 mm |
| 内存密度 | - | 4194304 bit | 4194304 bit | 4194304 bit | - | 4194304 bit |
| 内存集成电路类型 | - | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | - | STANDARD SRAM |
| 内存宽度 | - | 8 | 8 | 8 | - | 8 |
| 湿度敏感等级 | - | 3 | 3 | 3 | - | 3 |
| 功能数量 | - | 1 | 1 | 1 | - | 1 |
| 端子数量 | - | 32 | 32 | 36 | - | 32 |
| 字数 | - | 524288 words | 524288 words | 524288 words | - | 524288 words |
| 字数代码 | - | 512000 | 512000 | 512000 | - | 512000 |
| 工作模式 | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS |
| 最高工作温度 | - | 85 °C | 85 °C | 85 °C | - | 85 °C |
| 最低工作温度 | - | -40 °C | -40 °C | -40 °C | - | -40 °C |
| 组织 | - | 512KX8 | 512KX8 | 512KX8 | - | 512KX8 |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装代码 | - | TSOP1 | TSOP1 | TFBGA | - | SOP |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | - | SMALL OUTLINE |
| 并行/串行 | - | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL |
| 峰值回流温度（摄氏度） | - | 260 | 260 | 260 | - | 260 |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 座面最大高度 | - | 1.25 mm | 1.25 mm | 1.2 mm | - | 3 mm |
| 最大供电电压 (Vsup) | - | 3.6 V | 3.6 V | 3.6 V | - | 3.6 V |
| 最小供电电压 (Vsup) | - | 2.5 V | 2.5 V | 2.5 V | - | 2.5 V |
| 标称供电电压 (Vsup) | - | 2.8 V | 2.8 V | 2.8 V | - | 2.8 V |
| 表面贴装 | - | YES | YES | YES | - | YES |
| 技术 | - | CMOS | CMOS | CMOS | - | CMOS |
| 温度等级 | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | - | INDUSTRIAL |
| 端子面层 | - | Matte Tin (Sn) - annealed | Matte Tin (Sn) | Tin/Silver/Copper (Sn/Ag/Cu) | - | Matte Tin (Sn) - annealed |
| 端子形式 | - | GULL WING | GULL WING | BALL | - | GULL WING |
| 端子节距 | - | 0.5 mm | 0.5 mm | 0.75 mm | - | 1.27 mm |
| 端子位置 | - | DUAL | DUAL | BOTTOM | - | DUAL |
| 处于峰值回流温度下的最长时间 | - | 40 | 40 | 40 | - | 40 |
| 宽度 | - | 8 mm | 8 mm | 6 mm | - | 11.305 mm |
